SIMULATION METHODS OF PIEZORESISTIVE PRESSURE SENSORS IN ORDER TO IMPROVE CONSISTENCY

2012 ◽  
Vol 27 (02) ◽  
pp. 1350011 ◽  
Author(s):  
ZHAOHUA ZHANG ◽  
TIANLING REN ◽  
RUIRUI HAN ◽  
LI YUAN ◽  
BO PANG
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Simulation Method ◽  
Test Results ◽  
Silicon Membrane ◽  
Element Analysis ◽  
Piezoresistive Pressure Sensor ◽  
Consistency Results ◽  
Good Consistency ◽  
Piezoresistive Pressure Sensors

It is important to realize good consistency among different device units on a big wafer. The bad product consistency results from the processing deviation which is hard to control. A novel simulation method to control and reduce the influence of processing deviation on the sensitivity of a piezoresistive pressure sensor is provided in this paper. Based on finite element analysis (FEA) and mathematical integration, the performance of the pressure sensors is simulated. The pressure sensors are designed and fabricated according to the simulation results. The test results confirm that this simulation method can help to design the pressure sensor very precisely. From the simulation and test results, we find that properly enlarging the size of the square silicon membrane can improve the devices consistency.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

2011 ◽  
Vol 464 ◽  
pp. 208-212
Author(s):  
Hai Bin Pan ◽  
Jian Ning Ding ◽  
Guang Gui Cheng ◽  
Hui Juan Fan
Keyword(s):  
Finite Element ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Fem Simulation ◽  
Sensor Chip ◽  
Stress Distributions ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

scholarly journals A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

2021 ◽  
Vol 12 ◽  
pp. 14
Author(s):  
Meetu Nag ◽  
Ajay Kumar ◽  
Bhanu Pratap
Keyword(s):  
Pressure Sensor ◽  
Wearable Sensors ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
The Body ◽  
Optimized Design ◽  
Element Analysis ◽  
Highly Sensitive ◽  
And Performance ◽  
Piezoresistive Pressure Sensors

The demand for flexible and wearable sensors is increasing day by day due to varied applications in the biomedical field. Especially highly sensitive sensors are required for the detection of the low signal from the body. It is important to develop a pressure sensor that can convert the maximum input signal into the electrical output. In this paper, the design and performance of graphene piezoresistive pressure sensors have been investigated by zig–zag piezoresistors on the square diaphragm. On the applied pressure, deformation is sensed by the piezoresistors above the diaphragm. Finite element analysis is carried out to investigate the effect of zig–zag piezoresistors on the square diaphragm. Simulated results for the optimized design are obtained for an operating range of 0–100 psi for pressure sensitivity.

TCR of the Ni-Cr Thin Film Resistors Used in Piezoresistive Pressure Sensor

2011 ◽  
Vol 483 ◽  
pp. 735-739 ◽  
Author(s):  
Li Xiao ◽  
Li Dong Du ◽  
Zhan Zhao ◽  
Zhen Fang ◽  
Jing Xu
Keyword(s):  
Thin Film ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Temperature Characteristic ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Thin Film Resistors ◽  
Metal Materials ◽  
Piezoresistive Pressure Sensors ◽  
Effect Of The Composition

In this paper, temperature characteristic of Ni-Cr thin film resistors is studied which have a low temperature drifting coefficient and used in a kind of metal piezoresistive pressure sensors based on MEMS technology. Normally, Ni-Cr alloys have a small temperature coefficient of resistance (TCR) compared with some other metal materials. But it depends on the composition of Ni and Cr in the alloy and on the annealing process under different temperature. Through the research of the effect of the composition of the alloy and annealing cycles, it is found that 50:50wt% Ni-Cr thin film has negative TCR and 80:20wt% NiCr thin film has positive TCR. Both of them have a small TCR and can improve the precision of piezoresistive pressure sensor.

scholarly journals A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

2016 ◽  
Author(s):  
Gang Cao ◽  
Xiaoping Wang ◽  
Yong Xu ◽  
Sheng Liu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Temperature Drift ◽  
Electrical Field ◽  
Piezoresistive Pressure Sensor ◽  
Improved Stability ◽  
Developed Pressure ◽  
Piezoresistive Pressure Sensors ◽  
P Type ◽  
The Impact

This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, p-type piezoresistors are covered by an n-type shield layer, which is formed by ion implantation. The proposed pressure sensors have been successfully fabricated by bulk micromachining techniques. The impact of electrical field on piezoresistors is studied by simulation. The temperature drift of the pressure sensor has been investigated by both simulation and experimental measurement. Characteristics of developed pressure sensors are tested from -40 C to 125 C. A sensitivity of 0.022 mV/V/KPa and a maximum non-linearity of 0.085% FS are measured for the fabricated sensor in a pressure range of 1 MPa. The temperature coefficients of resistance of shielded piezoresistors are found to be smaller than those of un-shielded ones. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

Assembly and Testing of Surface Micromachined, Piezoresistive Polysilicon Pressure Sensors

1999 ◽  
Author(s):  
Todd F. Miller ◽  
David J. Monk ◽  
Gary O’Brien ◽  
William P. Eaton ◽  
James H. Smith
Keyword(s):  
Pressure Sensor ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
Surface Micromachining ◽  
Process Technology ◽  
Crystal Silicon ◽  
Noise Characteristics ◽  
Testing Techniques ◽  
Piezoresistive Pressure Sensors

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

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