Nickel Induced Lateral Crystallization of Amorphous Silicon Film by Electroless Planting

2009 ◽  
Vol 66 ◽  
pp. 147-150
Author(s):  
Wei Li ◽  
Dong Lin Xia ◽  
Ming Xia Song ◽  
Zhen Zhong Zhang ◽  
Jia Miao Ni ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Electroless Nickel ◽  
Nitrogen Atmosphere ◽  
Nickel Film ◽  
Glass Substrates ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Nickel Distribution

A novel deposition way of nickel film for crystallization amorphous silicon film is introduced. Electroless nickel planting is a convenient and inexpensive way to deposit nickel without using the electric field or any large facility. A 200 nm nickel film is deposited on the glass substrates and then a 300nm a-Si film is deposited on the nickel film with a horizontal electric field assisted to enhance amorphous silicon crystallization. The bi-layer film is annealed at 500°C for several hours in the nitrogen atmosphere. The crystallized Si thin films were characterized by Raman spectroscopy, Field emission scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The Raman demonstrates that the a-Si has been crystallized. Furthermore the FE-SEM shows the lateral crystalline morphology, the length of grain is up to 5µm and the EDS reveals the nickel distribution in the MILC and MIC area.

Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Silicon Based

scholarly journals Modeling of Beta Conductivity in Tritiated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Radioactive Decay ◽  
Dangling Bonds ◽  
Electron Hole ◽  
Beta Particles ◽  
Amorphous Silicon Film ◽  
Recombination Centers

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Symmetric Substructure Dual Gratings for Enhancement of Light Absorption in Amorphous Silicon Film Solar Cells

2016 ◽  
Vol 36 (3) ◽  
pp. 0325001
Author(s):  
安倩 An Qian ◽  
侯金 Hou Jin ◽  
王文珍 Wang Wenzhen ◽  
杨春勇 Yang Chunyong ◽  
钟志有 Zhong Zhiyou
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Light Absorption ◽  
Silicon Film ◽  
Amorphous Silicon Film

Thickness change in an annealed amorphous silicon film detected by spectroscopic ellipsometry

1996 ◽  
Vol 279 (1-2) ◽  
pp. 174-179 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Kaneko ◽  
A.H. Jayatissa ◽  
M. Aoyama
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Silicon Film ◽  
Thickness Change ◽  
Amorphous Silicon Film

Influence of heat generated by a Raman excitation laser on the structural analysis of thin amorphous silicon film

2016 ◽  
Vol 364 ◽  
pp. 302-307 ◽  
Author(s):  
P. Novák ◽  
J. Očenášek ◽  
L. Prušáková ◽  
V. Vavruňková ◽  
J. Savková ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Excitation Laser
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