Influence of Doped Mn, Cu, Ni and Fe on Electrical Properties of SrTiO3 Ceramics

2009 ◽  
Vol 79-82 ◽  
pp. 1603-1606 ◽  
Author(s):  
Ning Zhang Wang ◽  
Sha Sha ◽  
Yu Tian Ma

MnCO3, CuO, NiO and Fe2O3 doped SrTiO3 multifunction ceramics were fabricated firstly. The microstructure and electrical properties were investigated. The results show that MnCO3 doped ceramic and CuO doped ceramic possess relative higher resistivity (ρ),nonlinear coefficient (α), varistor voltage (V1mA) and relative lower dielectric constant (ε),dielectric loss (tgδ) in contrast with NiO doped ceramic and Fe2O3 doped ceramic with the same contents under the same sintering conditions. The electrical properties among the ceramics doped are different due to the different behaviors of Mn,Cu,Ni and Fe acceptor dopants during the sintering course.

2011 ◽  
Vol 399-401 ◽  
pp. 783-787
Author(s):  
Ning Zhang Wang ◽  
Zhang Wen

CuO and MnCO3 doped SrTiO3-based multifunction ceramics were prepared respectively with solid state reaction method under vacuum condition. The electrical properties’ change with the oxidation temperature and microstructure were investigated. The results show that acceptor dopants behaves differently with the same sintering conditions. CuO-doped ceramic possess relative higher dielectric loss, dielectric constant and relative lower nonlinear coefficient, varistor voltage in contrast with MnCO3 doped ceramic with the same contents under the same sintering conditions. The grain size of CuO-doped sample is significantly larger than the sample doped with MnCO3. The grain distributions of CuO-doped sample is more homogeneous. The electrical properties of the ceramics are different due to the different behaviors of CuO and MnCO3 accepter dopants during the sintering process.


2012 ◽  
Vol 239-240 ◽  
pp. 1604-1608
Author(s):  
Ning Zhang Wang ◽  
Jian Ye Li ◽  
Ji Ning ◽  
Jing Liu

The varistor-dielectric characteristics of SrTiO3 ceramics with various amounts of MnCO3 and SiO2 additives was studied. The experimental results show that , with the increase of added amounts of MnCO3, the resistivity (ρ), nonlinear coefficient (α) and varistor voltage (V10mA) increase firstly and then decrease while the dielectric constant (ε) and dielectric loss (tgδ) decrease firstly and then increase. The best added amount of SiO2 is 0.4wt% because the electrical properties of SrTiO3 ceramics drop when x(SiO2)>0.4wt%.The SrTiO3 based ceramic, with the doping of 0.5mol%Nb2O5+0.5mol%MnCO3+0.4wt%SiO2, the better microstructure and electrical properties can be obtained.


2014 ◽  
Vol 28 (08) ◽  
pp. 1450065 ◽  
Author(s):  
Mamata Maisnam ◽  
Sumitra Phanjoubam

In this paper, V 2 O 5 added Li – Mn – Ti ferrites were prepared by the conventional double sintering ceramic technique having the compositional formula [Formula: see text] where "x" is the amount of V 2 O 5 added and x = (0.0, 0.1, 0.2 and 0.3) wt.%. The samples were pre-sintered at 650°C for 2 h and then finally sintered at 950°C for 1 h. Single phase cubic spinel structures of the samples were confirmed by XRD studies. Various structural and electrical properties were studied and compared with those measured from sample of same composition but prepared with 0.5 wt.% of Bi 2 O 3. This sample was pre-sintered at 850°C for 4 h and sintered at 1050°C for 4 h. Adding V 2 O 5 in Li -ferrites was found to reduce the sintering temperature and obtained products with reduced porosity and crystallite size but with enhanced DC resistivity. From the studies of dielectric properties, it is found that V 2 O 5 added ferrites have lower dielectric constant and dielectric loss. Temperature dependence of dielectric properties was also studied and temperature dependence of dielectric constant and dielectric loss were less significant in the V 2 O 5 added Li -ferrites.


2007 ◽  
Vol 336-338 ◽  
pp. 775-778
Author(s):  
Yu Xing Xu ◽  
Zi Long Tang ◽  
Zhong Tai Zhang ◽  
Li Hai Xu

Sr0.48Ba0.24Ca0.28TiO3-based varistor ceramics with an excellent capacitor-varistor multifunctional characteristics (V1mA = 11 ~ 49 ν.mm-1, α = 6.1 ~ 11.3, ε r max=3.5×105, tanδmin = 5%) were prepared using conventional solid method. The effect of oxidation temperature and time on structure and electrical properties were investigated. The results show that with increasing the oxidation temperature from 800°C to 900°C, the varistor voltage V1mA and non-linearity coefficient α defining varistor characteristics increase linearly, while the dielectric constant ε r and dielectric loss tanδ decrease linearly. There exists an optimum α value when the specimens were oxidized at 850°C for 3h. This behavior was explained through various defect reactions of dopants.


2018 ◽  
Vol 280 ◽  
pp. 142-148 ◽  
Author(s):  
Norhizatol Fashren Muhamad ◽  
Rozana Aina Maulat Osman ◽  
Mohd Sobri Idris ◽  
Faizal Jamlos ◽  
Nor Azura Malini Ahmad Hambali

Present investigation provides experimental studies on cylindrical dielectric resonator antennas (CDRAs) fabricated from SrTi1-xZrxO3ceramic with different substitution of Zr in place of Ti for (0 ≤ x ≤1). Ceramic powder were prepared using conventional solid state reaction method. X-ray Diffraction exposes physical properties Zr-doped SrTiO3which exhibit phase transition from cubic, tetragonal to orthorhombic phase. The electrical properties such as dielectric constant (εr) and dielectric loss (tan δ) were studied in variation of temperatures and frequencies. At room temperature the dielectric constant decreased from 240 to 21 with increase of Zr content however the amazing result was obtained for multiband antenna by Zr content. The dielectric loss obtain shows very low loss value roughly below 0.07 for all samples. The variations of return loss, resonance frequency and bandwidth of CDRAs at their respective resonant frequencies are studied experimentally.


RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 53970-53976 ◽  
Author(s):  
Tianyi Na ◽  
Hao Jiang ◽  
Liang Zhao ◽  
Chengji Zhao

The novel naphthyl epoxy resin was synthesized and cured with MeHHPA. It showed significantly lower dielectric constant and dielectric loss than other commercial epoxy resins due to the introduction of fluorine on the side chains.


2010 ◽  
Vol 156-157 ◽  
pp. 1541-1544
Author(s):  
Bo Li ◽  
Feng Gao ◽  
Liang Liang Liu ◽  
Bei Xu

(1-x)(0.6BIT-0.4BT)-xBiYbO3(BTBY) ceramics with high Curie temperature were prepared by the conventional processing. The effect of BiYbO3 content on the microstructure and electrical properties was investigated. The results show that the main phase of BTBY ceramics is BIT-BT, and a new phase BaBi4Ti4O15 (BBT) appeared. The grain morphology of BTPY ceramics are platelike and the grain size was significantly increased with increasing content of BiYbO3 .Tc of all the BTBY samples are above 440 . The BTBY ceramics show obvious dielectric relaxor characteristic. The dispersion factor γ, the dielectric constant εr, and the dielectric loss tanδ decreased with increasing the content of BiYbO3. When the content of BiYbO3 is 0.06, the optimal properties of BTBY ceramics are obtained, Tc is 457 , εr is 165, tanδ is 0.0223 and d33 is 10 pC·N-1.


1996 ◽  
Vol 433 ◽  
Author(s):  
Kwangsoo No ◽  
Joon Sung Lee ◽  
Han Wook Song ◽  
Won Jong Lee ◽  
Byoung Gon Yu ◽  
...  

AbstractBa(TMHD)2, Sr(TMHD)2 and Ti-isopropoxide were used to fabricate the (SrxTi1 x)O3 and (Ba1 x Srx)TiO3 thin films. The decomposition and degradation characteristics of Ba(TMHD)2 and Sr(TMHD)2 with storage time were analyzed using a differential scanning calorimeter (DSC). The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition rate, the ratio of Sr/Ti, the dielectric constant and the leakage current density of the film. The dependency of the crystallinity and the electrical properties on the Sr/Ti ratio of films were investigated. However, almost of the films deposited with Ar carrier gas had slightly high dielectric loss and high leakage current density and showed non-uniform compositional depth profiles. NH3 gas was also used to decrease the degradation of the MO-sources. Mass spectra in-situ monitoring of source vapors in ECR-PAMOCVD system were obtained. By introducing NH3 as a carrier gas, a significant improvement was achieved in the volatility and the thermal stability of the precursors, and the vaporization temperatures of the precursors were reduced compared to Ar carrier gas. The uniform compositional depth profile, less hydrogen and carbon content and the good electrical properties of (SrxTi1−x)O3 thin films were obtained with NH3 carrier gas. The (Ba1−xSrx)TiO3 thin film were fabricated to have very fine and uniform microstructure, the dielectric constant of 456, the dielectric loss of 0.0128, the leakage current density of 5.01 × 10−8A/cm2 at 1V and the breakdown field of 3.65MV/cm.


2015 ◽  
Vol 29 (01) ◽  
pp. 1450255
Author(s):  
Victory Maisnam ◽  
Mamata Maisnam ◽  
Sumitra Phanjoubam

Lithium cobalt nanoferrites having the compositional formula Li 0.5-x/2 Co x Fe 2.5-x/2 O 4 with x varying from 0.00 to 0.12 in steps of 0.03 were prepared by the chemical sol–gel method. Samples were heated at two different temperatures namely 300°C and 500°C for 4 h. Structural characterization of the samples was done using X-ray diffraction (XRD) technique and confirmed the formation of single phase with spinel structure in all the samples. From the XRD data, the lattice parameter was calculated and found to range from 82.87–83.35 nm while the crystallite size was found to be in the range 17–34 nm. Microstructural studies were carried out using the Scanning Electron Microscopy and revealed the microstructures with grain size ranging from 35–70 nm. Electrical properties like dielectric constant, dielectric loss and AC conductivity for these nanoferrites were investigated. The frequency variation of room temperature dielectric constant, dielectric loss and AC conductivity were studied in the frequency range 100 Hz–1 MHz, and a dispersive behavior was observed, which has been attributed to the Maxwell–Wagner type of interfacial polarization.


2007 ◽  
Vol 280-283 ◽  
pp. 357-360
Author(s):  
M.M. Mosaad ◽  
M.I. Abd El-Ati ◽  
S.A. Olofa ◽  
A. Ismal

The electrical resistivity (r), the dielectric constant (e), and the dielectric loss (tan d) were accurately measured in the temperature range 60-200oC for the samples (BaTiO3-La2O3-Nb2O5) with (Nb2O5 = 0.1) wt% and La2O3 = 0.0, 0.1, 0.2, 0.3 and 0.4). It is found that the addition of La content cause increase in resistivity and decrease the dielectric constant.


Sign in / Sign up

Export Citation Format

Share Document