Influence of Iodine Doping on the Properties of Amorphous Carbon Thin Films Deposited from Camphoric Carbon Precursor

2013 ◽  
Vol 832 ◽  
pp. 449-454
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
A. Ishak ◽  
Yosri M. Siran ◽  
Syahril Anuar M. Rejab ◽  
...  

odine incorporation to amorphous carbon (a-C) thin films offers many advantages and a full understanding of the properties of iodine doped amorphous carbon (a-C:I) thin films which is necessary for applications like optoelectronics devices and photovoltaic solar cells. Iodine doped amorphous carbon thin films have been doped by thermal chemical vapour deposition (CVD) technique at different amount of iodine. The effects of iodine amount on the properties of a-C:I thin films have been investigated using standard measurement techniques and discussed. FESEM studies have been performed on the doped films for the surface morphology studies. Raman studies have been carried out on the doped samples for the chemical bonding of carbon atoms. The sp2 and sp3 contents have found to be dependent on the amount of iodine. For evaluation of the electrical and optical properties of the doped films, the current-voltage (I-V) measurement and UV-Vis-NIR spectroscopy have been performed on the a-C:I thin films. It has been observed that the a-C:I thin films doped with 1g has higher electrical conductivity and lowest optical band gap.

2012 ◽  
Vol 626 ◽  
pp. 834-838 ◽  
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
Mohamad Rusop

A simple thermal chemical vapor deposition method is employed for the deposition of amorphous carbon thin films by natural precursor camphor oil onto the glass substrates and the iodine doping process. In this work, we have studied the effect of iodine doping on the evolution of electrical properties and the optical and structural properties of amorphous carbon thin films. The amorphous carbon thin films were characterized by using Raman spectroscopy, UV-VIS-NIR spectroscopy, current-voltage (I-V) measurement, Fourier transform infrared (FTIR) and FESEM. The I-V study reveals that the electrical conductivity was increased with the iodine doping. The iodine doped thin films induced graphitization by decreasing the optical band gap. Raman and FTIR result indicates that amorphous carbon thin films consist of a mixture of sp2 and sp3 bonded carbon atoms. The FESEM shows the amorphous nature of the thin films.


2012 ◽  
Vol 576 ◽  
pp. 611-614
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
Mohamad Rusop

Amorphous carbon thin films have been deposited by a simple Thermal Chemical Vapor Deposition (CVD) with varying the amount of natural precursor (camphor oil) onto the glass substrates. In this work, we have investigated the effect of different amount of camphor oil on the evolution of electrical conductivity and the optical and structural properties of amorphous carbon thin films. The amorphous carbon thin films were characterized by using current-voltage (I-V) measurement, UV-VIS-NIR spectroscopy and Raman spectroscopy. The current-voltage (I-V) study reveals that the highest electrical conductivity was deposited at 3 ml camphor oil. The optical band gap is almost unchanged with the increase of camphor oil amount. Raman result indicates that amorphous carbon thin films consists a mixture of sp2 and sp3 bonded carbon atoms.


2013 ◽  
Vol 667 ◽  
pp. 294-299 ◽  
Author(s):  
K. Dayana ◽  
A.N. Fadzilah ◽  
A. Ishak ◽  
Mohamad Rusop Mahmood

Thin film of undoped and doped amorphous carbon has been achieved using the simple thermal CVD system in an ambient gas of Ar and Ar with I2, respectively. The electrical and optical properties of the iodine doped amorphous carbon (a-C:I) thin films were studied. The incorporation of iodine into the amorphous carbon thin film results in increase of electrical conductivity as doping temperature increase up to 400°C, which indicates that doping effect of iodine. Heterojuction is confirmed by rectifying current-voltage characteristics of a-C:I/n-Si junction. The decreasing of optical band gap from 0.54 to 0.25 eV after iodine doping was determined which contribute to induce graphitization in the films. Raman result indicates that sp2 and sp3 bonded carbon atoms were dominated in the both with and without iodine doped thin films.


2012 ◽  
Vol 10 (10) ◽  
pp. 77-79
Author(s):  
Sunil Adhikary

Nitrogen doped amorphous carbon thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapour deposition (MW SWP CVD) to investigate effect of nitrogen on properties of the carbon films. Deposition rate of the films found in the range of 5-7.5 nm/min. Optical band gap of the films decreased from 3.3 eV to 2.3 eV corresponding to the increase of nitrogen flow rates from 0 to 10 sccm. RMS roughness of the undoped and Ndoped films was found to be 0.5 nm and 0.55 nm respectively suggesting that the amorphous carbon films deposited by MW SWP CVD are smooth. Scientific World, Vol. 10, No. 10, July 2012 p77-79 DOI: http://dx.doi.org/10.3126/sw.v10i10.6867


1998 ◽  
Vol 278 (1-2) ◽  
pp. 130-134 ◽  
Author(s):  
D.S Patil ◽  
K Ramachandran ◽  
N Venkatramani ◽  
M Pandey ◽  
S Venkateswaran ◽  
...  

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