Pulsed Laser Deposition (PLD) Technique to Prepare Biocompatible Thin Films

2006 ◽  
Vol 49 ◽  
pp. 56-61 ◽  
Author(s):  
Joseph J. Beltrano ◽  
Lorenzo Torrisi ◽  
Anna Maria Visco ◽  
Nino Campo ◽  
E. Rapisarda
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Target Material ◽  
Xrd Analysis ◽  
Spot Size ◽  
Laser Deposition ◽  
Laser Source ◽  
Medical Field ◽  
Hot Plasma ◽  
532 Nm

A Nd:YAG laser is employed to ablate different materials useful in the bio-medical field. The laser source operates in the IR (1064 nm), VIS (532 nm) and UV (355 nm) regions with a pulse duration of 3-9 ns, a pulse energy of 3-300 mJ, a spot size of 1 mm2 and a repetition rate of 1- 30 Hz. Target material of interest are Titanium, Carbon, Hydroxyapatite (HA) and Polyethylene (PE). Laser irradiation occurs in vacuum, where hot plasma is generated, and thin films are deposited on near substrates. Generally, substrates of silicon, titanium, titanium-alloys and polymers were employed. Biocompatible thin films are investigated with different surface techniques, such as IR spectroscopy, Raman spectroscopy, XRD analysis and SEM investigations. Depending of the kind of possible application, films require special properties concerning the grain size, porosity, uniformity, wetting, hardness, adhesion, crystallinity and composition. The obtained results will be presented and discussed with particular regard to HA..

Effect of energy, temperature, and Cu-doped coatings on crystallinity of Hydroxyapatite thin films obtained by pulsed laser deposition

2021 ◽  
Author(s):  
Nooshin Kashi ◽  
Mahdi Momeni ◽  
Habib Hamidinezhad
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
High Surface ◽  
Pulsed Laser ◽  
Xrd Analysis ◽  
Laser Deposition ◽  
Laser Source ◽  
X Ray Diffraction ◽  
Crystalline Films ◽  
Steel Substrates

In this work, a pulsed laser deposition (PLD) technique with an Nd:YAG laser source was used to produce pure Hydroxyapatite (HA) and Cu-substituted HA (Cu-HA) coatings on stainless steel substrates in vacuum at room temperature. It is observed that the combined effects of percentages of Cu dopants and laser energy as well as annealing temperature significantly modify the crystallinity of the films. The morphology and structural properties of the deposited HA films were analyzed by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and Raman spectroscopy. FESEM images displayed various shapes of nanoparticles with high-surface density throughout the area of the substrate and with typical sizes around 26–208 nm. XRD analysis confirmed that post-deposition annealing is essential to achieve the desired crystallinity and uniformity of coatings. The Raman spectrum of HA has peaks at 958.22, 437.48, and 587.05 cm[Formula: see text] attributed to the [Formula: see text] PO[Formula: see text], [Formula: see text] PO[Formula: see text], and [Formula: see text] PO[Formula: see text], respectively. The synthesized HA and Cu-HA crystalline films are nanostructures with dense and compact microstructures. Finally, irregular surface and crystalline structure of fabricated films lead to the extension of the surface and enhance the cell’s proliferation in medical uses and biomedical applications.

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Laser fluence and spot size effect on compositional and structural properties of BiFeO 3 thin films grown by Pulsed Laser Deposition

2017 ◽  
Vol 634 ◽  
pp. 107-111 ◽  
Author(s):  
N. Jaber ◽  
J. Wolfman ◽  
C. Daumont ◽  
B. Négulescu ◽  
A. Ruyter ◽  
...  
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Pulsed Laser Deposition ◽  
Structural Properties ◽  
Laser Fluence ◽  
Pulsed Laser ◽  
Spot Size ◽  
Laser Deposition

CdS Nanostructured Thin Films Synthesized by Pulsed Laser Deposition for Solar Cell Technology

2021 ◽  
Vol 882 ◽  
pp. 155-164
Author(s):  
Jinan A. Abd ◽  
Wasan M. Mohammed ◽  
Amer Al-Nafiey
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Crystalline Structure ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Xrd Analysis ◽  
Laser Deposition ◽  
Cds Thin Films

CdS thin films have been grown on glass substrate at 250o C employing pulsed laser deposition method. The effect of laser pulses number on the crystalline structure, surface morphology, optical properties, and films thickness have been studied. XRD analysis shows that the CdS films have polycrystalline and hexagonal nanostructure with three notable peaks along (100), (002), and (101) planes and preferentially orientated along (101). The crystallite size of the preferred orientation was in the range of (21.4 - 27.3 nm). With small pulses number, XRD pattern confirms the formation of CdO with three peaks (111), (200), and (220). Theses peaks gradually reduce with the increasing of the pulses. The absorbance of the films is in the visible part of the spectrum. The band gap of the synthesized films reduces by rising the number of laser pulses. AFM studies indicate that the grain size and surface roughness increase with the film thickness. Due to the good crystalline structure and optical properties of the film of the highest thickness, it has been grown on a wafer silicon substrate for solar cell applications measurements. Hall measurements indicate low resistivity of 0.3×10-2 (Ω.m) and high conductivity of 3.3×10+2 (Ω.m)-1. The efficiency of the n-CdS/ p-Si junction has been calculated to be 3.4 % using I-V characteristic measurement. Keywords: pulsed laser, thin films, structural, optical, morphology, solar cell measurements

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Low Temperature Preparation

AbstractPreferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

2013 ◽  
Vol 43 (12) ◽  
pp. 1170-1174
Author(s):  
A S Kuzanyan ◽  
A A Kuzanyan ◽  
V A Petrosyan ◽  
S Kh Pilosyan ◽  
A Z Grasiuk
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Simple Solution

Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2737-2742 ◽  
Author(s):  
Ying Deng ◽  
Anthony Pelton ◽  
R. A. Mayanovic
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Pulses ◽  
High Energy ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

ABSTRACTPulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

Femtosecond Pulses as a New Photonic Source for Growing Thin Films by Pulsed-laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
Eric Millon ◽  
Jacques Perrière ◽  
Olivier Albert ◽  
Jean Etchepare ◽  
Chantal Boulmer-Leborgne
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
Wide Band ◽  
Laser Pulses ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Time Resolved ◽  
Short Laser Pulses

AbstractThe femtosecond (fs) lasers display noticeable specificities compared with the nanosecond (ns) ones operating in the UV domain, and classically used for the pulsed-laser deposition (PLD) technique. The ultra-short laser pulses offer the feature of minimal thermal damage induced in the target material, and the very high intensities (1012-14 W/cm2) available with fs lasers are likely to allow the ablation of any kind of materials, even the wide band gap insulators.The morphology, structure, composition and properties of the films obtained by fs PLD are studied according to the experimental growth conditions, the nature of the target material, and the dynamic expansion of plasma plume. In the case of ZnO, smooth, dense and nanocrystalline films (10 to 30 nm crystallites) can be epitaxially grown on adequate substrates (i.e. sapphire). On the contrary, BaTiO3 films are formed by the random stacking of aggregates (10 to 200 nm) leading to a non negligible surface roughness,. In addition, the chemical composition of fs PLD thin films of multicomponent compound (i.e. BaTiO3) is not homogeneous, an enrichment in the lighter element being observed in the central part of the film. These properties are related to the phenomena taking place during the various steps of the process (laser-matter interaction, plasma formation, expansion) through time resolved emission spectroscopy and plume optical imaging measurements.

XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Bao Man ◽  
Hong Xi ◽  
Chuan Chen ◽  
Mei Liu ◽  
Jing Wei
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Zno Thin Films ◽  
Laser Source ◽  
Zno Films

AbstractUsing a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.

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