Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

2012 ◽  
Vol 323-325 ◽  
pp. 439-444 ◽  
Author(s):  
Omar Abbes ◽  
Feng Xu ◽  
Alain Portavoce ◽  
Christophe Girardeaux ◽  
Khalid Hoummada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Magnetic Layer ◽  
Electrical Current ◽  
High Energy ◽  
Reactive Diffusion ◽  
X Ray Diffraction ◽  
Polarized Electrons ◽  
X Ray ◽  
Spin Polarized

An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact that in a magnetic layer, the electrical current can be spin polarized. To fabricate such components, a material whose electronic properties depend on its magnetic state is needed. The Mn-Ge system presents a lot of phases with different magnetic properties, which can be used for spintronics. The most interesting phase among the Mn-Ge system is Mn5Ge3 because of its stability at high temperatures, its Curie temperature which is close to room temperature and its ability of injecting spin-polarized electrons into semiconductors. In this paper, we have combined Reflection High-Energy Electron Diffraction (RHEED) and X-ray Diffraction (XRD), to study the sequence of formation of MnxGey phases during reactive diffusion of both a 50 nm and a 210 nm thick Mn films deposited by Molecular-Beam Epitaxy (MBE) on Ge (111).

Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)

2011 ◽  
Vol 172-174 ◽  
pp. 579-584 ◽  
Author(s):  
Omar Abbes ◽  
Feng Xu ◽  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Vinh Le Thanh ◽  
...  
Keyword(s):  
Magnetic Layer ◽  
High Energy ◽  
Reactive Diffusion ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Spin Polarized ◽  
First Results ◽  
Sequential Phase

In recent years, spintronics whose principle is based on controlling the spin of electrons in semiconductor layers is presented as a complementary or even an alternative solution for production of logic devices in microelectronics. It relies on the fact that electric current in a magnetic layer can be spin polarized. Manufacture of such components is based on the use of materials or heterostructures whose electronic properties depend on their magnetic state. The magnetic Mn-Ge system is interesting because of its possible development at high Curie temperature and its integration on Si substrate. Among all of the Mn-Ge phase compounds of the diagram, Mn5Ge3 seems the most interesting one for spintronics applications: it is a stable and ferromagnetic phase at room temperature. In this paper, we present first results of the study, by Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), of the sequence of formation of the MnxGey phases in the case of reaction of a nanometric-thick Mn film (200nm) deposited by MBE on Ge (111).

The Growth of GaN Films by Migration-Enhanced Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
S. E. Hooper ◽  
C. T. Foxon ◽  
T. S. Cheng ◽  
N. J. Jeffs ◽  
G. B. Ren ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
High Energy ◽  
Epitaxial Films ◽  
Buffer Layers ◽  
Growth Substrate ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Migration Enhanced Epitaxy

ABSTRACTGallium Nitride epitaxial films were grown by migration enhanced epitaxy directly on sapphire (0001) without using any pre-growth substrate nitridation or low temperature buffer layers. In comparison with our material grown directly on sapphire by conventional molecular beam epitaxy, a significant improvement in the surface morphology and layer properties, measured by reflection high energy electron diffraction, X-ray diffraction, scanning electron microscopy, room temperature photoluminescence and the Hall effect, was observed for material grown by migration enhanced epitaxy.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Microstructure Evolution of a Fine Grain Al-50wt%Si Alloy Fabricated by High Energy Milling

2011 ◽  
Vol 479 ◽  
pp. 54-61 ◽  
Author(s):  
Fei Wang ◽  
Ya Ping Wang
Keyword(s):  
Grain Growth ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Milling Time ◽  
High Energy ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Laser Method ◽  
X Ray ◽  
Fine Grain

Microstructure evolution of high energy milled Al-50wt%Si alloy during heat treatment at different temperature was studied. Scanning electron microscope (SEM) and X-ray diffraction (XRD) results show that the size of the alloy powders decreased with increasing milling time. The observable coarsening of Si particles was not seen below 730°C in the high energy milled alloy, whereas, for the alloy prepared by mixed Al and Si powders, the grain growth occurred at 660°C. The activation energy for the grain growth of Si particles in the high energy milled alloy was determined as about 244 kJ/mol by the differential scanning calorimetry (DSC) data analysis. The size of Si particles in the hot pressed Al-50wt%Si alloy prepared by high energy milled powders was 5-30 m at 700°C, which was significantly reduced compared to that of the original Si powders. Thermal diffusivity of the hot pressed Al-50wt%Si alloy was 55 mm2/s at room temperature which was obtained by laser method.

Bi-Based Superconducting Multilayers Obtained by Molecular Beam Epitaxy

1999 ◽  
Vol 13 (09n10) ◽  
pp. 991-996
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
G. Carbone ◽  
T. Di Luccio ◽  
S. L. Prischepa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Xrd Analysis ◽  
High Energy ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Model ◽  
Different Thickness

High temperature superconducting multilayers have been obtained depositing Bi2Sr2CuO6+δ(2201) and ACuO2 layers, where A is Ca or Sr, by Molecular Beam Epitaxy (MBE) on MgO and SrTiO3 substrates. The samples, formed by a sequence of 2201/ACuO2 bilayers, have different thickness of ACuO2 layers while the thickness of the 2201 layers is kept constant. The surface structure of each layer has been monitored by in situ Reflection High Energy Electron Diffraction (RHEED) analysis which has confirmed a 2D nucleation growth. X-ray diffraction (XRD) analysis has been used to confirm that the layered structure has been obtained. Moreover, one-dimensional X-ray kinematic diffraction model has been developed to interpret the experimental data and to estimate the period of the multilayers. Resistive measurements have shown that the electrical properties of the samples strongly depend on the thickness of the ACuO2 layers.

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Phase Transitions and Recrystallization in a Ti-46at%Al-9at%Nb Alloy as Observed by In-Situ High-Energy X-ray Diffraction

2006 ◽  
Vol 980 ◽  
Author(s):  
Klaus-Dieter Liss ◽  
Helmut Clemens ◽  
Arno Bartels ◽  
Andreas Stark ◽  
Thomas Buslaps
Keyword(s):  
Phase Transitions ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Reciprocal Lattice ◽  
Lamellar Microstructure ◽  
High Energy ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray

AbstractHigh-energy synchrotron X-ray diffraction is a powerful tool for bulk studies of materials. In this investigation, it is applied to the investigation of an intermetallic γ-TiAl based alloy with a composition of Ti-46Al-9Nb. The morphology of the reflections on the Debye-Scherrer rings is evaluated in order to approach grain sizes as well as crystallographic correlations. An in-situ heating cycle from room temperature to a temperature above the α-transus temperature has been conducted starting from a massively transformed sample. With increasing temperature the occurrence of strain relaxation, chemical and phase separation, domain orientations, phase transitions, recrystallization processes, and subsequent grain growth can be observed. During cooling to room temperature, crystallographic correlations between the re-appearing γ-phase and the host α-phase, known as the Blackburn correlation, are observed in the reciprocal lattice, which splits into different twinning and domain orientation relationships present in the fully lamellar microstructure.

MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

2004 ◽  
Vol 829 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Wei Huang ◽  
Kunishige Oe
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Peak Energy ◽  
First Time ◽  
Lattice Matched

ABSTRACTGaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

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