Electrochemical Atomic Layer Deposition and Characterization of CdTe and PbTe Thin Films

2015 ◽  
Vol 31 ◽  
pp. 30-39 ◽  
Author(s):  
Amal Kabalan ◽  
Pritpal Singh
Keyword(s):  
Room Temperature ◽  
Atomic Layer ◽  
Flow Cell ◽  
X Ray ◽  
Optical Reflection ◽  
Reflection Data ◽  
Layer Deposition ◽  
Glancing Angle ◽  
Layer Flow

This study reports the cycle chemistries involved in depositing CdTe and PbTe nanofilms. An automated thin-layer flow cell electrodeposition system was used to deposit the films at room temperature. Cyclic voltammetry was used to study the Underpotential Deposition (UPD) of the compounds. The monolayer/cycle deposition rate was also monitored in order to insure that the film is depositing at a uniform rate. The chemical composition of the films was characterized using Energy-Dispersive X-ray Spectroscopy (EDS) on a Scanning Electron Microscope (SEM). The crystallinity of the films was studied using a glancing angle X-ray diffractometer. The bandgaps of the films were calculated using measured optical reflection data.

scholarly journals X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers

2014 ◽  
Vol 32 (1) ◽  
pp. 01A111 ◽  
Author(s):  
Sakari Sintonen ◽  
Saima Ali ◽  
Oili M. E. Ylivaara ◽  
Riikka L. Puurunen ◽  
Harri Lipsanen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

In situ synchrotron x-ray characterization of ZnO atomic layer deposition

2010 ◽  
Vol 97 (19) ◽  
pp. 191904 ◽  
Author(s):  
D. D. Fong ◽  
J. A. Eastman ◽  
S. K. Kim ◽  
T. T. Fister ◽  
M. J. Highland ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

scholarly journals Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

2018 ◽  
Vol 64 (3) ◽  
pp. 206
Author(s):  
R. S. Castillo Ojeda ◽  
Joel Díaz-Reyes ◽  
M. Galván-Arellano ◽  
K. N. Rivera-Hernández ◽  
M. S. Villa-Ramírez ◽  
...  
Keyword(s):  
High Resolution ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Wide Range ◽  
Cdte Growth

In this work are presented the results obtained from the deposition ofCd1-xZnxTe nanolayers using as precursor the vapours of the elementsZn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410oC. Temperatures higher than 400oC were necessary for the CdTe growth. The layers of the Cd1-xZnxTe ternary alloy were deposited at temperature range of 400 and 425oC. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrumshows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some importantcharacteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.

scholarly journals Physical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition

2015 ◽  
Vol 10 (1) ◽  
pp. 49-58
Author(s):  
Danilo R. Huanca ◽  
V. Christiano ◽  
C. Adelmann ◽  
Patrick Verdonck ◽  
Sebastião G. Dos Santos Filho
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Elements ◽  
Atomic Layer ◽  
Homogeneous Distribution ◽  
Gyration Radius ◽  
Crystalline Phases ◽  
X Ray ◽  
Layer Deposition ◽  
Scanning Electron

Hafnium aluminates films with 50 mol% of Hf were deposited onto Si(100) using atomic layer deposition. The films were annealed by RTP at 1000 oC for 60 s in pure N2 or N2+5%O2 and by LASER at 1200oC for 1ms in pure N2. Then, they were characterized by X-ray spectroscopies, ellipsometry, Rutherford backscattering and scanning electron microscopy. For thin films annealed by RTP in N2, phase separation takes place, promoting the formation of HfO2 and Al2.4 O3.6 crystalline phases. In contrast, the films annealed by LASER remain predominantly amorphous with crystalline facets of Al2.4O3.6. Also, non-homogeneous distribution of the chemical elements within the dielectrics gave rise to the formation of several regions which can be viewed as sub-layers, each of them with arbitrary electron density and thickness. As a result, Kratky curves pointed out to the coexistence of different features described by different gyration radius yielding GISAXS scattering profiles with polydispersive characteristics. Finally, the samples annealed by RTP were interpreted as agglomerates of spheroids with different sizes (1.1-2.2 nm) and with different crystalline phases whereas the samples annealed by LASER were interpreted as larger spheroids of crystalline Al2.4O3.6 (1.7-2.7nm) embedded in a matrix predominantly amorphous.

Room Temperature Atomic Layer Deposition of SiO2 on Flexible Plastic Materials

2014 ◽  
Vol 490-491 ◽  
pp. 118-122 ◽  
Author(s):  
Fumihiko Hirose ◽  
Kensaku Kanomata ◽  
Shigeru Kubota ◽  
Bashir Ahmmad ◽  
Kazuhiro Hirahara
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Acrylic Resin ◽  
Atomic Layer ◽  
Soft Materials ◽  
X Ray ◽  
Plastic Materials ◽  
Layer Deposition ◽  
Chemical Resistivity

Room-temperature SiO2 atomic layer deposition (ALD) on soft, flexible materials of acrylic resin and polystyrene is developed using tris (dimethylamino) silane and plasma-excited water vapor. The growth rate is measured to be 0.13 nm/cycle at room temperature on the acrylic resin surface. The SiO2 coating on the soft materials was examined by X-ray photoelectron spectroscopy and an organic solvent resistant test. This process is applicable as a surface treatment for improving chemical resistivity of the soft materials.

Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia

2004 ◽  
Vol 811 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Eddie Lee ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Deposition Rate ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Glancing Angle ◽  
Trimethyl Aluminum

AbstractAluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD) on 200 mm silicon wafers. For both thermal ALD and PEALD, the deposition rate increased significantly with the deposition temperature. The deposition rate did not fully saturate even with 10 seconds of NH3 pulse time. Plasma significantly increased the deposition rate of AlN films. A large number of incubation cycles were needed to deposit AlN films on Si wafers. 100% step coverage was achieved on trenches with aspect ratio of 35:1 at 100 nm feature size by thermal ALD. X-ray diffraction (XRD) data showed that the AlN films deposited from 370 °C to 470 °C were polycrystalline. Glancing angle X-ray reflection (XRR) results showed that the RMS roughness of the films increased as the film thickness increased.

X-ray Reflectivity Characterization of ZnO/Al2O3Multilayers Prepared by Atomic Layer Deposition

2002 ◽  
Vol 14 (5) ◽  
pp. 2276-2282 ◽  
Author(s):  
J. M. Jensen ◽  
A. B. Oelkers ◽  
R. Toivola ◽  
D. C. Johnson ◽  
J. W. Elam ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition
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