Composition and Morphology Control of Si-C-N Powders by CVD Method

1999 ◽  
Vol 175-176 ◽  
pp. 49-56 ◽  
Author(s):  
Štefan Kavecký ◽  
B. Janeková ◽  
Pavol Šajgalík
2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

Author(s):  
Ashok Jadhavar ◽  
Vidya Doiphode ◽  
Ajinkya Bhorde ◽  
Yogesh Hase ◽  
Pratibha Shinde ◽  
...  

: Herein, we report effect of variation of hydrogen flow rate on properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PECVD promote the growth of crystallinity in nc-Si:H films with an expense of reduction in deposition rate. FTIR spectroscopy analysis indicates that hydrogen content in the film increases with increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show increasing trend with increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied. We also found that the defect density and Urbach energy also increases with increase in hydrogen flow rate. Photosensitivity (Photo /Dark) decreases from  103 to  1 when hydrogen flow rate increased from 30 sccm to 100 sccm and can attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PE-CVD to synthesize nc-Si:H films.


2021 ◽  
pp. 126225
Author(s):  
Rutuja Bhusari ◽  
Jean-Sébastien Thomann ◽  
Jérôme Guillot ◽  
Renaud Leturcq

Author(s):  
Yanchun Sun ◽  
Chun Yu Sun ◽  
Zhongxiang Chen ◽  
Haitao Wang ◽  
Peng Wang ◽  
...  

Here, using a conducting polymer, polyaniline (PANI), membrane as the working electrode, we demonstrate the growth and morphology control of Cu and Cu2O through the electrodeposition technique, which is not...


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1836
Author(s):  
Nicholas Schaper ◽  
Dheyaa Alameri ◽  
Yoosuk Kim ◽  
Brian Thomas ◽  
Keith McCormack ◽  
...  

A novel and advanced approach of growing zinc oxide nanowires (ZnO NWs) directly on single-walled carbon nanotubes (SWCNTs) and graphene (Gr) surfaces has been demonstrated through the successful formation of 1D–1D and 1D–2D heterostructure interfaces. The direct two-step chemical vapor deposition (CVD) method was utilized to ensure high-quality materials’ synthesis and scalable production of different architectures. Iron-based universal compound molecular ink was used as a catalyst in both processes (a) to form a monolayer of horizontally defined networks of SWCNTs interfaced with vertically oriented ZnO NWs and (b) to grow densely packed ZnO NWs directly on a graphene surface. We show here that our universal compound molecular ink is efficient and selective in the direct synthesis of ZnO NWs/CNTs and ZnO NWs/Gr heterostructures. Heterostructures were also selectively patterned through different fabrication techniques and grown in predefined locations, demonstrating an ability to control materials’ placement and morphology. Several characterization tools were employed to interrogate the prepared heterostructures. ZnO NWs were shown to grow uniformly over the network of SWCNTs, and much denser packed vertically oriented ZnO NWs were produced on graphene thin films. Such heterostructures can be used widely in many potential applications, such as photocatalysts, supercapacitors, solar cells, piezoelectric or thermal actuators, as well as chemical or biological sensors.


2021 ◽  
Author(s):  
YiLin Yin ◽  
Jingchao Liu ◽  
Zengnan Wu ◽  
Ting Zhang ◽  
Zenghe Li

As one of the most essential semiconductors, ZnO has been widely used for solar cells, photocatalysis, environmental remediation, etc. Doping and morphology control of ZnO can significantly improve the efficiency...


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