Study of the Sensing Mechanism of SnO2 Thin-Film Gas Sensors Using Hall Effect Measurements

2002 ◽  
Vol 230-232 ◽  
pp. 357-360 ◽  
Author(s):  
A. Lopes ◽  
Patrícia Nunes ◽  
Paula M. Vilarinho ◽  
Regina da Conceição Corredeira Monteiro ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Gas Sensors ◽  
Sensing Mechanism ◽  
Hall Effect Measurements

Study on Operation Mechanisms of Semiconducting Thin-Film Gas Sensors by Hall-Effect Measurements

2010 ◽  
Vol 130 (3) ◽  
pp. 69-74 ◽  
Author(s):  
Daizo Uemura ◽  
Kazuhiro Hara
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Gas Sensors ◽  
Hall Effect Measurements

Label-Free Electrical Detection of DNA Hybridization on Graphene using Hall Effect Measurements: Revisiting the Sensing Mechanism

2013 ◽  
Vol 23 (18) ◽  
pp. 2301-2307 ◽  
Author(s):  
Cheng-Te Lin ◽  
Phan Thi Kim Loan ◽  
Tzu-Yin Chen ◽  
Keng-Ku Liu ◽  
Chang-Hsiao Chen ◽  
...  
Keyword(s):  
Hall Effect ◽  
Dna Hybridization ◽  
Label Free ◽  
Electrical Detection ◽  
Sensing Mechanism ◽  
Hall Effect Measurements

Size effect and comprehensive mathematical model for gas-sensing mechanism of SnO2 thin film gas sensors

2021 ◽  
pp. 162875
Author(s):  
Jianqiao Liu ◽  
Jiarong Lv ◽  
Haomiao Xiong ◽  
Yujia Wang ◽  
Guohua Jin ◽  
...  
Keyword(s):  
Thin Film ◽  
Mathematical Model ◽  
Size Effect ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Sno2 Thin Film ◽  
Sensing Mechanism

Sensing mechanism of SnO2 thin film gas sensors

1993 ◽  
Vol 14 (1-3) ◽  
pp. 677-678 ◽  
Author(s):  
Hisao Ohnishi ◽  
Hirokazu Sasaki ◽  
Takeshi Matsumoto ◽  
Masamichi Ippommatsu
Keyword(s):  
Thin Film ◽  
Gas Sensors ◽  
Sno2 Thin Film ◽  
Sensing Mechanism

Hall Effect Measurements on Fine-Grain Poly-Si Thin-Film Transistors Made from Laser-Irradiated Sputter-Deposited Si Film

1991 ◽  
Vol 30 (Part 2, No. 2A) ◽  
pp. L172-L174 ◽  
Author(s):  
Tadashi Serikawa ◽  
Seiiti Shirai ◽  
Akio Okamoto ◽  
Shiro Suyama
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Thin Film Transistors ◽  
Fine Grain ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
Si Thin Film

Analysis of the sensing mechanism of tin dioxide thin film gas sensors using the change of work function in flammable gas atmosphere

1996 ◽  
Vol 100-101 ◽  
pp. 365-369 ◽  
Author(s):  
Byeongdeok Yea ◽  
Ryosuke Konishi ◽  
Tomoyuki Osaki ◽  
Satoru Abe ◽  
Hiroasa Tanioka ◽  
...  
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Gas Sensors ◽  
Tin Dioxide ◽  
Sensing Mechanism ◽  
Gas Atmosphere ◽  
Flammable Gas

Hall effect measurements in gas sensors based on nanosized os-doped sol-gel derived SnO/sub 2/ thin films

2003 ◽  
Vol 3 (6) ◽  
pp. 827-834 ◽  
Author(s):  
M. Epifani ◽  
A. Forleo ◽  
S. Capone ◽  
F. Quaranta ◽  
R. Rella ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Gas Sensors ◽  
Sol Gel ◽  
Hall Effect Measurements

Study on the sensing mechanism of tin oxide flammable gas sensors using the Hall effect

1991 ◽  
Vol 69 (12) ◽  
pp. 8368-8374 ◽  
Author(s):  
Masamichi Ippommatsu ◽  
Hisao Ohnishi ◽  
Hirokazu Sasaki ◽  
Takeshi Matsumoto
Keyword(s):  
Hall Effect ◽  
Gas Sensors ◽  
Tin Oxide ◽  
Sensing Mechanism ◽  
Flammable Gas

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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