Development of Silicon Carbide Coating on Al2O3 Ceramics from Precursor Polymers by Radiation Curing

2006 ◽  
Vol 317-318 ◽  
pp. 573-576 ◽  
Author(s):  
Radoslaw A. Wach ◽  
Masaki Sugimoto ◽  
Masahito Yoshikawa
Keyword(s):  
Silicon Carbide ◽  
Porous Substrate ◽  
Carbide Coating ◽  
Preceramic Polymer ◽  
Radiation Curing ◽  
Oxidation Method ◽  
Precursor Polymers ◽  
Sic Film ◽  
Polymer Thickness

Production of reinforced surface ceramic material was investigated by radiation curing-oxidation method. The originality of this research is to use along with polycarbosilane (PCS) an admixture of another preceramic polymer, polyvinylsilane (PVS). PCS, PVS or their combination in cyclohexane solution were spin-coated onto Al2O3 plates or deposited onto porous substrate by dipping method. After radiation oxidation step, used to preserve the coat on the substrate, a heat treatment was applied for crosslinking of the polymer. Thickness and quality of silicon carbide (SiC) film were investigated after pyrolysis.

Use of Blended Precursors of Poly(vinylsilane) in Polycarbosilane for Silicon Carbide Fiber Synthesis with Radiation Curing

1999 ◽  
Vol 82 (4) ◽  
pp. 1045-1051 ◽  
Author(s):  
Masaki Narisawa ◽  
Akira Idesaki ◽  
Shuhei Kitano ◽  
Kiyohito Okamura ◽  
Masaki Sugimoto ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Fiber ◽  
Radiation Curing

A heat-resistant preceramic polymer with broad working temperature range for silicon carbide joining

2018 ◽  
Vol 38 (1) ◽  
pp. 67-74 ◽  
Author(s):  
Bo Tang ◽  
Mingchao Wang ◽  
Ruiming Liu ◽  
Jiachen Liu ◽  
Haiyan Du ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Preceramic Polymer ◽  
Temperature Range ◽  
Working Temperature ◽  
Heat Resistant

Composites Obtained from Alumina and Polymer Derived Ceramic

2018 ◽  
Vol 912 ◽  
pp. 141-146 ◽  
Author(s):  
Glauson Aparecido Ferreira Machado ◽  
Rosa Maria Rocha ◽  
Ana Helena Almeida Bressiani
Keyword(s):  
Heat Treatment ◽  
Silicon Carbide ◽  
Linear Shrinkage ◽  
Density Variation ◽  
Silicon Oxycarbide ◽  
Alternative Route ◽  
Preceramic Polymer ◽  
Pure Alumina ◽  
Polymer Derived Ceramic ◽  
Alumina Composites

Alumina-mullite composites with low shrinkage can be made by reaction bond using mixtures of alumina, aluminum and silicon carbide. In this work, an alternative route is used to produce alumina composites with low shrinkage. Here alumina samples containing additions of 10 and 20 wt% of a preceramic polymer were warm-pressed and treated in the range of 900 -1500°C to produce alumina based composites. The obtained composites were analyzed by linear shrinkage and compared to pure alumina samples sintered at the same temperature range. It were also evaluated the density variation and crystalline phases formed during heat treatment of alumina composites. Results showed that alumina-silicon oxycarbide and alumina-mullite composites were obtained with lower shrinkage than pure alumina samples.

Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000033-000036 ◽  
Author(s):  
M.H. Weng ◽  
A.D. Murphy ◽  
D.T. Clark ◽  
D.A. Smith ◽  
R.F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Systematic Evaluation ◽  
Process Conditions ◽  
Operating Characteristics ◽  
Gate Stack ◽  
Metal Insulator ◽  
Semiconductor Interfaces

The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed.

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Improving the quality of silicon carbide refractories

Refractories ◽  
1964 ◽  
Vol 5 (3-4) ◽  
pp. 140-144 ◽  
Author(s):  
I. Ya. Prokhorova ◽  
A. N. Novikov
Keyword(s):  
Silicon Carbide

Synthesis of nanoporous silicon carbide via the preceramic polymer route

2009 ◽  
Vol 113 (2-3) ◽  
pp. 861-867 ◽  
Author(s):  
Andrew R. Maddocks ◽  
David J. Cassidy ◽  
Allan S. Jones ◽  
Andrew T. Harris
Keyword(s):  
Silicon Carbide ◽  
Preceramic Polymer ◽  
Nanoporous Silicon

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Epitaxial Film ◽  
Kinetic Monte Carlo ◽  
Three Dimensional ◽  
Monte Carlo Study ◽  
Kinetic Monte Carlo Simulations ◽  
Cubic Silicon Carbide ◽  
Silicon Carbide Polytype

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths

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