Dielectric Properties of (Bi1/2Na1/2)TiO3-SrTiO3 Ferroelectric Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 49-50
Author(s):  
Chao Liu ◽  
Yuan Fang Qu ◽  
Feng Long Han ◽  
Yuan Liang Li ◽  
Xiao Yan Li
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Ferroelectric Properties ◽  
Dielectric Constants ◽  
Ferroelectric Ceramics

Ferroelectric properties of (Bi1/2Na1/2) TiO3-SrTiO3 were studied. The dielectric properties were measured at 1KHz. It was found that the dielectric constants are improved with the increase of additive amount of BNT. If the amount continues increasing, the properties become worse, the optimum dielectric constant of the samples can reach 4300. When the proportion of (Bi1/2Na1/2)TiO3: SrTiO3 is 65:35, with the increase of additive amount of MnCO3, the Curie temperature descends obviously. The dielectric constant increased at beginning and dropped sharply when the amount of MnCO3 exceeds 1.1wt%.

The Crystalline and Dielectric Properties of 0.38(Bi1−xLax)ScO3-0.62PbTiO3 Ferroelectric Ceramics

2005 ◽  
Vol 888 ◽  
Author(s):  
Yi Chen ◽  
Dejun Lan ◽  
Qiang Chen ◽  
Zhuo Xu ◽  
Xi Yue ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Dielectric Permittivity ◽  
Curie Temperature ◽  
Ferroelectric Ceramics ◽  
Partial Replacement ◽  
State Process ◽  
Lanthanum Content ◽  
Lower Temperature

ABSTRACTTo investigate the effects of partially substitution of lanthanum for bismuth in the BiScO3-PbTiO3 (BSPT) ceramics, the 0.38(Bi1−xLax)ScO3-0.62PbTiO3 (BLSPTx) ceramics were prepared by using conventional solid state process. It was found that the partial replacement of lanthanum for bismuth do not affects the crystalline structure of the BSPT ceramics. With increasing of the lanthanum content, the grains of BLSPTx ceramics grown much bigger than those of BSPT ceramics when BLSPTx and BSPT ceramics were sintered at the same temperature. The temperature dependence of dielectric permittivity of BLSPTx ceramics shows that the Curie temperature (Tc) shifts toward lower temperature with the increasing of lanthanum content, and the BLSPTx samples for x=0.02 show the highest value of the dielectric constant at Tc.

Dielectric Properties and Microstructure of BaTiO3 Ceramics

2002 ◽  
Vol 718 ◽  
Author(s):  
Dae-Chul Park ◽  
Jun-ichi Itoh ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Toyohiko Yano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Secondary Phase ◽  
Dielectric Constants ◽  
Core Shell ◽  
Temperature Range ◽  
The Core ◽  
La Doped ◽  
Mg Doped

AbstractDielectric properties and microstructure were investigated in BaTiO3 ceramics with various additives, Ho2O3, MgO, Ho2O3/MgO, and La2O3. The dielectric constants were increased up to ∼4000 and ∼3000 at 25°C in the 1 mol% Ho-doped and 0.5 mol% Mg-doped BaTiO3 materials, respectively. The BaTiO3 material codoped with 3 mol% Ho + 1.5 mol% Mg led to increase dielectric constant up to ∼6000 at 25°C and the dielectric constant peak around Curie temperature was suppressed at temperature range of from 25°C to 125°C. The size of BaTiO3 grains depended on the content and kind of an additive. Core-shell grains and secondary phase were also dependent on an additive. Core-shell grains were formed completely in Ho-doped BaTiO3 except for 0.5 mol%, but the structure was little observed in Mg- and La-doped BaTiO3 material. Codoped BaTiO3 also formed the core-shell grains.

Electrical Properties of Bismuth-Layered Structural CaxSr2-xBi4Ti5O18 Ceramics

2010 ◽  
Vol 105-106 ◽  
pp. 282-285 ◽  
Author(s):  
Su Hua Fan ◽  
Feng Qing Zhang ◽  
Q.D. Che ◽  
R. Yu ◽  
W. Hu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Remnant Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Secondary Phase ◽  
Ferroelectric Ceramics ◽  
Layered Perovskite

Effects of amount of Ca on crystal structure, microstructure, ferroelectric properties, and dielectric properties of the CaxSr2-xBi4Ti5O18 (CSBTi-x) ferroelectric ceramics were investigated. The results show that single-phase layered perovskite ferroelectrics were obtained and no appreciable secondary phase was found.Ca-doping results in a notable enlargement of remnant polarization 2Pr. The 2Pr of CSBT-0.15 reaches a large value, the remnant polarization 2Pr and coercive field 2Ec were 18.1µC/cm2 and 120.2kV/cm, respectively. Dielectric constant and dielectric loss of CSBT-0.15 was also measured, showing dielectric constant εr=199~194 and dielectric loss tanδ=0.02~0.014 over the range of 100 kHz~1MHz, respectively.

The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Seong Jun Kang ◽  
Jeong Seon Ryoo ◽  
Yung Sup Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Lanthanum Titanate

ABSTRACTWe have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

Synthesis and Characteristics of MgO Coated BST-Mg2TiO4 Composite Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1180-1183
Author(s):  
Qian Qian Jia ◽  
Hui Ming Ji ◽  
Shan Liu ◽  
Xiao Lei Li ◽  
Zheng Guo Jin
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Loss Tangent ◽  
Phase Shifters ◽  
Precipitation Method ◽  
Composite Ceramics ◽  
Low Dielectric ◽  
Dielectric Constant And Loss ◽  
Bst Ceramics

The (Ba, Sr)TiO3 (hereafter BST) ceramics are promising candidate for applying in tunable devices. MgO coated BST-Mg2TiO4 (BSTM-MT) composite ceramics were prepared to obtain the low dielectric constant, low dielectric loss, good dielectric constant temperature stability, and high tunability of BST ceramics. The Ba0.55Sr0.40Ca0.05TiO3 nanoparticles were coated with MgO using the precipitation method and then mixed with Mg2TiO4 powders to fabricate BSTM-MT composite ceramics. The morphologies, phases, elements, and dielectric properties of the sintered ceramics were investigated. The core-shell structure of BST powder wrapped with MgO was clearly observed from the TEM image. After sintered at 1100 °C for 2 h, the composite ceramics expressed dense microstructures from SEM images and two main phases BST and Mg2TiO4 were detected in the XRD patterns. The dielectric constant and loss tangent were both reduced after the coating. The reduced dielectric constant and loss tangent of BSTM-MT were 190, 0.0011 (2MHz), respectively. The ceramics exhibited the diffuse phase transition near the Curie temperature and the Curie temperature shifted from 10 °C to 5 °C after the coating. Since the continuous Ti-O bonds were disconnected with the MgO coating, the tunability was reduced to 15.14 % under a DC bias field of 1.1 kV/mm. The optimistic dielectric properties made it useful for the application of tunable capacitors and phase shifters.

Structural and dielectric properties of Bi2NbxVi−xO5.5 ceramics

1996 ◽  
Vol 11 (9) ◽  
pp. 2288-2292 ◽  
Author(s):  
K. B. R. Varma ◽  
K. V. R. Prasad
Keyword(s):  
Differential Scanning Calorimetry ◽  
Grain Size ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Scanning Calorimetry ◽  
Electron Microscopic ◽  
Scanning Electron Microscopic ◽  
Scanning Electron

Bi2Nbx V1−xO5.5 ceramics with x ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at x 3= 0.1 and it persists until x = 0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi2NbxV1−xO5.5 ceramics confirm that the grain size decreases markedly (18 μm to 4 μm) with increasing x. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing x, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan δ) decrease with increasing x at room temperature.

Dielectric properties of barium titanium niobates

1997 ◽  
Vol 12 (2) ◽  
pp. 526-530 ◽  
Author(s):  
G. L. Roberts ◽  
R. J. Cava ◽  
W. F. Peck ◽  
J. J. Krajewski
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Dielectric Constants ◽  
Partial Substitution ◽  
Dielectric Measurements ◽  
Niobium Oxides ◽  
Polycrystalline Ceramic ◽  
Barium Titanium ◽  
Very Low Temperature

The results of measurements of dielectric constants, in the vicinity of ambient temperature, are presented for eight barium titanium niobium oxides (BaTi1+2nNb4O13+4n for n = 0, 1, 2, 3, 4; Ba3Ti4Nb4O21, Ba3Ti5Nb6O28, and Ba6Ti2Nb8O30) in polycrystalline ceramic form. The dielectric constants are in the range of 30 to 70. The results of dielectric measurements on solid solutions obtained by partial substitution of Ta for Nb are also reported. These substitutions do not dramatically increase the dielectric constants. One material, Ta-substituted Ba3Ti5Nb6O28, has a very low temperature coefficient of dielectric constant at K ≈ 45.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

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