Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders
2007 ◽
Vol 336-338
◽
pp. 637-639
Keyword(s):
X Ray
◽
We have prepared the gallium oxide (Ga2O3) films on sapphire substrates by a thermal evaporation of GaN powders. We have characterized the films by using the x-ray diffraction (XRD), scanning electron microscopy (SEM), and the photoluminescence (PL). SEM and XRD revealed that the deposits were Ga2O3 thin films with monoclinic structure. PL spectrum of Ga2O3 films under excitation at 325 nm showed a blue emission.
2010 ◽
Vol 152-153
◽
pp. 909-914
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2005 ◽
Vol 19
(15n17)
◽
pp. 2722-2727
1984 ◽
Vol 42
◽
pp. 288-289
1992 ◽
Vol 50
(2)
◽
pp. 1322-1323
2018 ◽
Vol 21
(7)
◽
pp. 495-500
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2012 ◽
Vol 174-177
◽
pp. 508-511