Reconstruction of Atomic Force Microscope Image Using Estimated Tip Shape from Impulse Response Technique

2013 ◽  
Vol 596 ◽  
pp. 147-151
Author(s):  
Yasuhiko Harada ◽  
Hayato Sone ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Impulse Response ◽  
Sample Surface ◽  
Atomic Force Microscope Image ◽  
Reconstruction Technique ◽  
Morphological Reconstruction ◽  
Reconstruction Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Image ◽  
Afm Image

Atomic force microscopy (AFM) is the useful tool for measuring the micro fabricated devices. Measuring sample surface with AFM, tip-induced distortions are serious problem for accurate measurement. In order to overcome this problem, many studies are reported to reconstruct surface image to original sample surface. We studied method of reconstruction technique of the AFM image by using estimated 3-D tip shape from the impulse response technique. To reconstruct the image of the sample surface, we used a morphological reconstruction process. We demonstrated how to obtain the 3-D tip from the using impulse response technique and then how to reconstruct the 3-D AFM image using estimated tip shape.

Preparation and Characterization Silver and Copper Layers on Polyimide Prepared by Electroless Copper Plating

2006 ◽  
Vol 947 ◽  
Author(s):  
Eun Sun Ji ◽  
Young Hwan Kim ◽  
Young Soo Kang
Keyword(s):  
Polyimide Film ◽  
Metallic Silver ◽  
Polyimide Films ◽  
Electroless Copper Plating ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ag Particles ◽  
Plating Method ◽  
Surface Image

ABSTRACTAg particles were generated on Ag+-doped polyimide film by ion exchanging, followed by copper deposition using metallic silver particles as seeds. The Cu layers were coated on the surface of polyimide films by electroless plating method. The surface image and morphology of Cu layers on the polyimide films were characterized with scanning electron microscopy (SEM), and atomic force microscopy (AFM). The chemical composition on the PI film was investigated energy dispersive X-ray (EDX) spectrometer.

Microdispersion of Carbon Blacks in Rubber, Part I: Some Quantitative Aspects by AFM Image Analysis

2006 ◽  
Vol 79 (5) ◽  
pp. 783-789 ◽  
Author(s):  
C. C. Wang ◽  
S. H. Wu ◽  
J. B. Donnet ◽  
T. K. Wang
Keyword(s):  
Particle Size ◽  
Atomic Force Microscopy ◽  
Image Analysis ◽  
Force Microscopy ◽  
Carbon Blacks ◽  
Surface Fraction ◽  
Atomic Force ◽  
Distance Distributions ◽  
Rubber Part ◽  
Afm Image

Abstract The microdispersion state of carbon blacks in an emulsion SBR matrix has been observed by atomic force microscopy (AFM) and the images analyzed quantitatively. The fillers were well dispersed in the rubber samples. Different parameters, such as the surface fraction of fillers in images, particle size distance distributions, have been extracted and the main results are presented.

scholarly journals Generalized Hertz model for bimodal nanomechanical mapping

2016 ◽  
Vol 7 ◽  
pp. 970-982 ◽  
Author(s):  
Aleksander Labuda ◽  
Marta Kocuń ◽  
Waiman Meinhold ◽  
Deron Walters ◽  
Roger Proksch
Keyword(s):  
Contact Mechanics ◽  
Small Amplitude ◽  
Sample Surface ◽  
Hertzian Contact ◽  
Modes Of Operation ◽  
Hertz Model ◽  
Force Microscopy ◽  
Atomic Force ◽  
Resonant Modes ◽  
Shape And Size

Bimodal atomic force microscopy uses a cantilever that is simultaneously driven at two of its eigenmodes (resonant modes). Parameters associated with both resonances can be measured and used to extract quantitative nanomechanical information about the sample surface. Driving the first eigenmode at a large amplitude and a higher eigenmode at a small amplitude simultaneously provides four independent observables that are sensitive to the tip–sample nanomechanical interaction parameters. To demonstrate this, a generalized theoretical framework for extracting nanomechanical sample properties from bimodal experiments is presented based on Hertzian contact mechanics. Three modes of operation for measuring cantilever parameters are considered: amplitude, phase, and frequency modulation. The experimental equivalence of all three modes is demonstrated on measurements of the second eigenmode parameters. The contact mechanics theory is then extended to power-law tip shape geometries, which is applied to analyze the experimental data and extract a shape and size of the tip interacting with a polystyrene surface.

The Adaptive Piezoelectric Microsensoriactuator for Active Control of Microcantilevers

2004 ◽  
Author(s):  
Steven Robert Burns ◽  
Daniel G. Cole ◽  
Robert L. Clark
Keyword(s):  
Mechanical Response ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Resonance Response ◽  
Surface Image ◽  
The Difference ◽  
Micro Cantilever ◽  
Structure Sensor ◽  
Analog Circuitry

The adaptive piezoelectric sensoriactuator is modified for use at the microscale to facilitate non-contact mode imaging of a microcantilever MEMS device in atomic force microscopy. The sensoriactuator is a truly colocated (sensor and actuator occupy exactly the same position on the structure) sensor/actuator device that uses a hybrid digital and analog design to drive a structure while simultaneously sensing the mechanical response. Using a piezoelectric material to both sense and actuate simultaneously is problematic because of the difficulty in resolving the sensory (mechanical) and actuator (electrical) parts of the output signal. Implementation of the adaptive piezoelectric sensoriactuator at the microscale results in a system with electrical quantities that are vastly reduced or increased from typical macroscale values, requiring more precise components and more careful design and construction of analog circuitry. For example, a typical micro-cantilever piezoelectric has a capacitance of on the order of 100 pF with an impedance at 50 kHz nearly 32 kΩ. The signal levels are significantly smaller with a typical piezoelectric current on the order of 100 nA. Thus, environmental noise can overwhelm signals in the system mandating the use of high precision operational amplifiers featuring ultra-low bias currents (±30 fA) and careful guarding or shielding of all circuitry. As reported in this paper, the adaptive piezoelectric microsensoriactuator has been successfully used to simultaneously sense and actuate while imaging using non-contact mode. The self-sensing microcantilever was successfully tested to produce a surface image using the microsensoriactuator to measure the movement of the microcantilever. The RMS value of the microsensoriactuator output is compared with the desired RMS output and the difference is used to drive an active resonance response controller. The active resonance response controller determines the control signal required to augment or attenuate the microcantilever’s motion to match the desired motion.

Sufficient condition for reliability measurement of sample geometry by atomic force microscopy

2020 ◽  
pp. 11-15
Author(s):  
Alexander S. Kravchuk ◽  
Anzhelika I. Kravchuk
Keyword(s):  
Atomic Force Microscopy ◽  
Preliminary Investigation ◽  
Sample Surface ◽  
Sufficient Condition ◽  
Surface Geometry ◽  
Force Microscopy ◽  
Atomic Force ◽  
Geometric Deviations ◽  
Reliability Measurement ◽  
Microscope Stage

A sufficient condition for determining the reliability of geometry measurements using atomic force microscopy for relatively small cantilever tilt angles is proposed. A relationship between the basic geometric parameters of surface roughness, geometric deviations of the probe, the angles of the cantilever and the inclination of the side faces of the probe, as well as the dimensions of the nonlocal point of the probable contact of its side faces with protrusions of roughness has been established. As a sufficient condition for the reliability of geometry measurements using atomic force microscopy, an obvious requirement is accepted. It determines the smallness of the ratio of the sizes of a nonlocal point to the distance between neighboring nonlocal points. Publications in which the measurement of surface nano-geometry of the samples does not indicate the roughness of the sample surface and the probe, the angles at the tip of the probe and the tilt of the cantilever, as well as the best resolution (smallest step) at which the study is carried out, cannot be accepted as reliable, because the results obtained in them are probabilistic in nature. The surface images obtained using atomic force microscopy without proper justification for the resolution (value of the measurement step) represent only a qualitative picture, on the basis of which it makes no sense to carry out any computational manipulations. In order to increase the reliability of measurements of surface geometry using atomic force microscopy, it is necessary to radically increase the accuracy of the manufacture of probes, as well as use probes with the smallest possible angle at the apex. In addition, it is necessary to make changes in the design of the atomic force microscopy. In particular, the automatic rotation of the microscope stage should be designed. It should provide closeness the probe axis direction to the normal to the average plane of the sample. This “integral” angle of rotation of the microscope stage is easily iteratively determined at the stage of preliminary investigation of the geometry of the surface of the sample. In this case, it will be necessary to geometrically increase the length of the cantilever so that the base extends beyond the limits of the sample.

Features of the Manufacturing Process of Silicon Tips for Cantilevers

2021 ◽  
Vol 26 (3-4) ◽  
pp. 234-245
Author(s):  
A.V. Novak ◽  
◽  
V.R. Novak ◽  
A.V. Rumyantsev ◽  
◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Film ◽  
Statistical Parameter ◽  
Sample Surface ◽  
Test Sample ◽  
Oxygen Atmosphere ◽  
Maximum Height ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystallographic Planes

Sample surface examination in atomic force microscopy is carried out using cantilevers having the form of elastic consoles with sharp needle (tip) at the free end. Quality of images obtained from atomic force microscope (AFM) heavily depends on tip sharpness degree. Silicon cantilevers made based on wet anisotropic etching are widely used in atomic force microscopy. This paper studies the dependence of the shape and size of the resulting tip on the concentration of KOH in the solution, as well as the effect of pyrogenic oxidation and oxidation in a dry oxygen atmosphere on the sharpness of the tip during the sharpening process. It was shown that when 70 % concentration is used, tips with the highest aspect ratio and maximum height are obtained. In this case, the shape of the needle is an octagonal pyramid, the lateral faces of which are formed by eight crystallographic planes from {311} and {131}. It was found that in a two-stage sharpening process, consisting of pyrogenic oxidation and oxidation in a dry oxygen atmosphere, it is possible to form sufficiently sharp probes with a tip radius of 2–5 nm and an apex angle of 14–24°. It has been established that a one-stage sharpening process based on pyrogenic oxidation provides only the production of probes with a radius of about 14 nm. Comparative tests of the manufactured probes in obtaining AFM images of a test sample of a polycrystalline silicon film with hemispherical grains (HSG-Si) were presented. Research study has revealed that such a statistical parameter as the relative increment of the surface area Sdr is the most sensitive to probe sharpness for surfaces of the HSG-Si film type.

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Dogan ◽  
J. Spradlin ◽  
J. Xie ◽  
A. A. Pomarico ◽  
R. Cingolani ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Surface ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Topological Features ◽  
Atomic Force ◽  
Local Current ◽  
Semiconductor Junction ◽  
Surrounding Areas ◽  
Conduction Properties

AbstractThe current conduction in GaN is very topical and is the topic of a vast amount of research. By simultaneously mapping the topography and the current distribution, conductive atomic force microscopy (C-AFM) has the potential to establish a correlation between topological features and localized current paths. In this study, this technique was applied to image the conduction properties of as-grown and post-growth chemically etched samples GaN epitaxial layers on a microscopic scale. Our results show that prismatic planes have a significantly higher conductivity than the surrounding areas of the sample surface. A large and stable local current was mainly observed from the walls of the etched pits, under forward and reverse bias of the metallized AFM tip/semiconductor junction.

The Atomic-Scale Hysteresis in Non Contact Atomic Force Microscopy

2010 ◽  
Author(s):  
Hossein Nejat Pishkenari ◽  
Ali Meghdari
Keyword(s):  
Contact Region ◽  
Sample Surface ◽  
System Size ◽  
Interaction Force ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Atomic Force ◽  
Environment Temperature ◽  
Plane Direction ◽  
Dynamics Simulations

In this research, the hysteresis in the tip-sample interaction force in noncontact force microscopy (NC-AFM) is measured with the aid of atomistic dynamics simulations. The observed hystersis in the interaction force and displacement of the system atoms leads to the loss of energy during imaging of the sample surface. Using molecular dynamics simulations it is shown that the mechanism of the energy dissipation occurs due to bistabilities caused by atomic jumps of the surface and tip atoms in the contact region. The conducted simulations demonstrate that when a gold coated nano probe is brought close to the Au (001) surface, the tip apex atom jumps to the surface; and instantaneously, four surface atoms jump away from the surface toward the tip apex atom. Along this line, particular attention is dedicated to the dependency of the energy loss to different parameters such as the environment temperature, the tip orientation, the surface plane direction, the system size, the distance of the closest approach and the tip oscillation frequency.

scholarly journals A Non-Destructive, Tuneable Method to Isolate Live Cells for High-Speed AFM Analysis

2021 ◽  
Vol 9 (4) ◽  
pp. 680
Author(s):  
Christopher T. Evans ◽  
Sara J. Baldock ◽  
John G. Hardy ◽  
Oliver Payton ◽  
Loren Picco ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
High Speed ◽  
Single Cells ◽  
Sample Surface ◽  
Live Cells ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

Suitable immobilisation of microorganisms and single cells is key for high-resolution topographical imaging and study of mechanical properties with atomic force microscopy (AFM) under physiologically relevant conditions. Sample preparation techniques must be able to withstand the forces exerted by the Z range-limited cantilever tip, and not negatively affect the sample surface for data acquisition. Here, we describe an inherently flexible methodology, utilising the high-resolution three-dimensional based printing technique of multiphoton polymerisation to rapidly generate bespoke arrays for cellular AFM analysis. As an example, we present data collected from live Emiliania huxleyi cells, unicellular microalgae, imaged by contact mode High-Speed Atomic Force Microscopy (HS-AFM), including one cell that was imaged continuously for over 90 min.

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 706-709 ◽  
Author(s):  
Marilena Vivona ◽  
Kassem Al Assaad ◽  
Véronique Soulière ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Sample Surface ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Conductive Atomic Force Microscopy ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

We report on the electrical characteristics of Ni/4H-SiC Schottky contacts fabricated on a Ge-doped 4H-SiC epilayer. The morphology and the current mapping carried out by conductive atomic force microscopy on the epilayer allowed observing nanoscale preferential conductive paths on the sample surface. The electrical characteristics of Ni contacts have been studied before and after a rapid thermal annealing process. A highly inhomogeneous Schottky barrier was observed in as-deposited diodes, probably related to the surface electrical inhomogeneities of the 4H-SiC epilayer. A significant improvement of the Schottky diodes characteristics was achieved after annealing at 700°C, leading to the consumption of the near surface epilayer region by Ni/4H-SiC reaction. After this treatment, the temperature behavior of the ideality factor and Schottky barrier height was comparable to that observed on commercial 4H-SiC material.

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