Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.A. Wills ◽  
Jun Amano
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Crystalline Structure ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Processing Parameters ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities

ABSTRACTEpitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.

Electrical Characteristics and Microstructures of Pr2O3-Doped Bi4Ti3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 370-373
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
B. Li
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Pr2O3-doped bismuth titanate (Bi4-xPrxTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0..0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with x=0.75 were above 30μC/cm2 and 75KV/cm , respectively.

Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 206-209
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
A.H. Cai ◽  
J. Liu ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Random Orientation ◽  
Si Substrates ◽  
Xrd Studies

Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2 and 60 KV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.

Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Yong Kwan Kim ◽  
Shintaro Yokoyama ◽  
Risako Ueno ◽  
Hitoshi Morioka ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Domain Switching ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

AbstractWe performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on epitaxial Pb(Zr0.35Ti0.65)O3 film capacitor structures. Small regions of 300-nm-thick epitaxial Pb(Zr,Ti)O3 thin films with Pt and SrRuO3 top electrodes were measured after applying various numbers of switching cycles of the electric field. Epitaxial Pb(Zr,Ti)O3 thin films were prepared on epitaxial (100)cSrRuO3/(100)SrTiO3 substrates by pulsed-metalorganic chemical vapor deposition. The volume faction of c-domain and remanent polarization was plotted against the number of switching cycles. In the both capacitors, the Vc increased as the switching cycle increased independent of fatigue behavior.

Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

2008 ◽  
Vol 368-372 ◽  
pp. 109-111
Author(s):  
Xing Ao Li ◽  
Zu Li Liu ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Jian Ping Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

2008 ◽  
Vol 368-372 ◽  
pp. 91-94
Author(s):  
S. Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
Chong Qing Huang ◽  
W.K. An ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.

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