Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure

2014 ◽  
Vol 605 ◽  
pp. 384-387
Author(s):  
Nicola Nedev ◽  
Abraham Arias ◽  
Mario Curiel ◽  
Roumen Nedev ◽  
David Mateos ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Output Signal ◽  
Uv Light ◽  
Low Cost ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Illumination ◽  
Capacitance Voltage ◽  
P Type ◽  
Metal Oxide Semiconductor Structure

We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to measure visible and UV light intensity or as a light switch. The output signal is change of the inversion capacitance under light illumination at a given bias. The device power consumption is very low and the output signal is independent of the temperature.

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

scholarly journals Study of Interface Charge Densities for ZrO2and HfO2Based Metal-Oxide-Semiconductor Devices

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
N. P. Maity ◽  
Reshmi Maity ◽  
R. K. Thapa ◽  
S. Baishya
Keyword(s):  
Metal Oxide ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Densities ◽  
Interface Charge ◽  
Capacitance Voltage ◽  
P Type ◽  
Mos Structures ◽  
Good Agreement

A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-kmaterials ZrO2and HfO2has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage (C-V) method and also conductance (G-V) method. It indicates that, by reducing the effective oxide thickness (EOT), the interface charge densities (Dit) increases linearly. For the same EOT,Dithas been found for the materials to be of the order of 1012 cm−2 eV−1and it is originated to be in good agreement with published fabrication results at p-type doping level of1×1017 cm−3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

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