Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

In this contribution we investigate the formation at high temperature of an oriented 3C-SiC seed on various orientations of Si substrates “pre-carbonized” through Plasma Immersion Ion Implantation (PIII) process.

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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

MRS Proceedings ◽

10.1557/proc-25-511 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

H. Yamamoto ◽

H. Ishiwara ◽

S. Furukawa ◽

M. Tamura ◽

T. Tokuyama

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Transmission Electron ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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Optical Waveguide Formation by Ion Implantation of Ti or Ag

MRS Proceedings ◽

10.1557/proc-100-311 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. B. Poker ◽

D. K. Thomas

Keyword(s):

Ion Implantation ◽

Concentration Profile ◽

Optical Waveguides ◽

Annealing Temperature ◽

Solid Phase ◽

Effective Means ◽

Complete Removal ◽

Solid Phase Epitaxy ◽

Annealing Temperatures ◽

Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

Applied Physics Letters ◽

10.1063/1.103477 ◽

1990 ◽

Vol 57 (13) ◽

pp. 1340-1342 ◽

Cited By ~ 82

Author(s):

J. A. Roth ◽

G. L. Olson ◽

D. C. Jacobson ◽

J. M. Poate

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Kinetics Of

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Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

MRS Proceedings ◽

10.1557/proc-235-293 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 9

Author(s):

Kin Man Yu ◽

Ian G. Brown ◽

Seongil Im

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Lattice Mismatch ◽

Solid Phase ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Dose ◽

Solid Phase Epitaxy ◽

Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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Effects of high temperature plasma immersion ion implantation on wear resistance of Ti-Si-B sintered alloys

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2013.04.029 ◽

2013 ◽

Vol 228 ◽

pp. 195-200 ◽

Cited By ~ 7

Author(s):

Bruno Bacci Fernandes ◽

Rogério Moraes Oliveira ◽

Mário Ueda ◽

Samantha de Fátima Magalhães Mariano ◽

Alfeu Saraiva Ramos ◽

...

Keyword(s):

Wear Resistance ◽

High Temperature ◽

Ion Implantation ◽

Temperature Plasma ◽

High Temperature Plasma ◽

Plasma Immersion Ion Implantation ◽

Sintered Alloys

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ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

International Journal of Modern Physics B ◽

10.1142/s0217979202015157 ◽

2002 ◽

Vol 16 (28n29) ◽

pp. 4234-4237

Author(s):

XUEQIN LIU ◽

CONGMIAN ZHEN ◽

YINYUE WANG ◽

JING ZHANG ◽

YUEJIAO PU ◽

...

Keyword(s):

Electrical Properties ◽

Ion Implantation ◽

Transport Properties ◽

Hall Mobility ◽

Carrier Transport ◽

Lattice Strain ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Strained Si ◽

Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

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