Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

2020 ◽  
Vol 1004 ◽  
pp. 173-179
Author(s):  
Kenta Irikura ◽  
Ryohei Kawasaki ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Etching Rate ◽  
Gas Flow Rate ◽  
Etching Depth ◽  
Gas Concentration ◽  
Gas Distributor ◽  
Rate Profile ◽  
Wafer Thinning ◽  
Sic Wafer

A 50-mm diameter silicon carbide wafer thinning technique by means of a chemical reaction using a chlorine trifluoride (ClF3) gas was studied accounting for the gas distributor design and the total gas flow rate. The entire etching depth profile could become uniform with the increasing total gas flow rate at the fixed chlorine trifluoride gas concentration. A relationship between the pinhole arrangement of the gas distributor and the local etching rate profile was clarified by comparing the quick calculation and the measurement.

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

2014 ◽  
Vol 778-780 ◽  
pp. 738-741 ◽  
Author(s):  
Dairi Yajima ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Substrate Surface ◽  
Etching Rate ◽  
Numerical Calculations ◽  
Total Flow ◽  
Total Flow Rate ◽  
Gas Concentration ◽  
Rate Profile

A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.

scholarly journals Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance

Natural-B ◽  
2016 ◽  
Vol 3 (4) ◽  
pp. 271-276
Author(s):  
Antonius Prisma Jalu Permana ◽  
D. J. Djoko H. Santjojo ◽  
Masruroh Masruroh
Keyword(s):  
Quartz Crystal Microbalance ◽  
Flow Rate ◽  
Plasma Etching ◽  
Gas Flow ◽  
Quartz Crystal ◽  
Etching Rate ◽  
Gas Flow Rate ◽  
Rate Effects

scholarly journals CO2 Capture in A Bubble-Column Scrubber Using MEA/CaCl2/H2O Solution—Absorption and Precipitation

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 694
Author(s):  
Pao Chi Chen ◽  
Shiun Huang Zhuo
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Liquid Flow Rate ◽  
Ph Value ◽  
Bubble Column ◽  
Operating Conditions ◽  
Co2 Absorption ◽  
Gas Flow Rate ◽  
Gas Concentration ◽  
Ph Values

This study used the solvent monoethylamine (MEA)/CaCl2/H2O to investigate CO2 absorption and CaCO3 crystallization in a bubble column scrubber. The variables explored were pH, gas flow rate, gas concentration, the liquid flow rate of the solution to absorb CO2, and CaCO3 crystallization. Under a continuous mode, the solution of CaCl2 was fed continuously, and the pH dropped after CO2 absorption. To maintain the set pH value, there was an automatic input of the MEA solvent into the bubble column. In addition to maintaining the pH, the solution could also absorb CO2 and produce CaCO3 crystals, which served two purposes. The results showed that there were mainly vaterite crystals. At different pH values, the lower the pH, the higher the precipitation rate of vaterite (Fp), and vice versa. However, under different gas flow rates, the Fp decreased as the pH value increased. Additionally, the process variables also affected the absorption rate (RA) and the overall mass-transfer coefficient (KGa) generally increased with increasing pH, gas concentration, and gas flow rate. However, it slowed down under operating conditions at high pH and high gas flow rate. Finally, correlation equations for RA, KGa, and Fp were also obtained and discussed in the study.

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

2019 ◽  
Vol 963 ◽  
pp. 520-524
Author(s):  
Keisuke Kurashima ◽  
Ryohei Kawasaki ◽  
Kenta Irikura ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Numerical Calculation ◽  
Transport Phenomena ◽  
Etching Rate ◽  
Single Crystalline ◽  
Gas Distributor ◽  
Rate Profile ◽  
Sic Wafer

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF3 gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

2017 ◽  
Vol 897 ◽  
pp. 383-386 ◽  
Author(s):  
Ken Nakagomi ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Gas Transport ◽  
Etching Rate ◽  
Gas Distributor ◽  
Polycrystalline Silicon Carbide ◽  
Rate Profile ◽  
Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

SCIENTIFIC AND ENGINEERING PRINCIPLES OF EFFICIENT FUEL USE AND ENVIRONMENTALLY FRIENDLY GAS COMBUSTION IN STOVE PLATES. PART 1. MODERN STATE-OF-THE-ART AND DIRECTIONS FOR IMPROVEMENT THE GAS BURNING IN DOMESTIC GAS COOKERS

2017 ◽  
pp. 3-18 ◽  
Author(s):  
B.S. Soroka ◽  
V.V. Horupa
Keyword(s):  
Natural Gas ◽  
Flow Rate ◽  
Gas Flow ◽  
Renewable Energy Sources ◽  
Combustion Process ◽  
Orifice Diameter ◽  
Firing Process ◽  
Gas Flow Rate ◽  
Gas Combustion ◽  
Gas Stoves

Natural gas NG consumption in industry and energy of Ukraine, in recent years falls down as a result of the crisis in the country’s economy, to a certain extent due to the introduction of renewable energy sources along with alternative technologies, while in the utility sector the consumption of fuel gas flow rate enhancing because of an increase the number of consumers. The natural gas is mostly using by domestic purpose for heating of premises and for cooking. These items of the gas utilization in Ukraine are already exceeding the NG consumption in industry. Cooking is proceeding directly in the living quarters, those usually do not meet the requirements of the Ukrainian norms DBN for the ventilation procedures. NG use in household gas stoves is of great importance from the standpoint of controlling the emissions of harmful components of combustion products along with maintenance the satisfactory energy efficiency characteristics of NG using. The main environment pollutants when burning the natural gas in gas stoves are including the nitrogen oxides NOx (to a greater extent — highly toxic NO2 component), carbon oxide CO, formaldehyde CH2O as well as hydrocarbons (unburned UHC and polyaromatic PAH). An overview of environmental documents to control CO and NOx emissions in comparison with the proper norms by USA, EU, Russian Federation, Australia and China, has been completed. The modern designs of the burners for gas stoves are considered along with defining the main characteristics: heat power, the natural gas flow rate, diameter of gas orifice, diameter and spacing the firing openings and other parameters. The modern physical and chemical principles of gas combustion by means of atmospheric ejection burners of gas cookers have been analyzed from the standpoints of combustion process stabilization and of ensuring the stability of flares. Among the factors of the firing process destabilization within the framework of analysis above mentioned, the following forms of unstable combustion/flame unstabilities have been considered: flashback, blow out or flame lifting, and the appearance of flame yellow tips. Bibl. 37, Fig. 11, Tab. 7.

On the Influence of Fluctuating Flow Rate Upon the Performance and Behaviour of Isothermal Reacting Systems

1998 ◽  
Vol 63 (6) ◽  
pp. 881-898
Author(s):  
Otakar Trnka ◽  
Miloslav Hartman
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Fluidized Bed Reactor ◽  
Computational Techniques ◽  
Continuous Stirred Tank Reactor ◽  
Gas Flow Rate ◽  
Solid Reaction ◽  
Continuous Stirred Tank ◽  
And Performance ◽  
Reacting Systems

Three simple computational techniques are proposed and employed to demonstrate the effect of fluctuating flow rate of feed on the behaviour and performance of an isothermal, continuous stirred tank reactor (CSTR). A fluidized bed reactor (FBR), in which a non-catalytic gas-solid reaction occurs, is also considered. The influence of amplitude and frequency of gas flow rate fluctuations on reactant concentrations at the exit of the CSTR is shown in four different situations.

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