DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process

2000 ◽  
Vol 338-342 ◽  
pp. 1639-1642
Author(s):  
Won Sang Lee ◽  
Ki Woong Chung ◽  
Moo Whan Shin
Keyword(s):  
Etching Process ◽  
Large Signal ◽  
Photoelectrochemical Etching ◽  
Rf Performance ◽  
Recessed Gate

Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

1999 ◽  
Vol 572 ◽  
Author(s):  
Won Sang Lee ◽  
Yoon Ho Choi ◽  
Ki Woong Chung ◽  
Moo Whan Shin ◽  
Dong Chan Moon
Keyword(s):  
Electrochemical Etching ◽  
Etching Rate ◽  
Drain Current ◽  
Etching Process ◽  
Device Performance ◽  
High Activation ◽  
Band Bending ◽  
Photoelectrochemical Etching ◽  
Characteristic Frequencies ◽  
Recessed Gate

ABSTRACTA new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 Å/min under the Hg illumination of 35 mW/cm/2. The MESFET saturates at VDS = 4 V and pinches off at VGS = −3 V. The maximum drain current of the device is 230 mA/mmn at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

2000 ◽  
Vol 36 (3) ◽  
pp. 265 ◽  
Author(s):  
Won Sang Lee ◽  
Yoon Ho Choi ◽  
Ki Woong Chung ◽  
Dong Chan Moon ◽  
Moo Whan Shin
Keyword(s):  
High Temperature ◽  
Etching Process ◽  
Photoelectrochemical Etching ◽  
Temperature Performance ◽  
Recessed Gate

Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique

2002 ◽  
Vol 95 (1) ◽  
pp. 73-76 ◽  
Author(s):  
Jong-Wook Kim ◽  
Jae-Seung Lee ◽  
Won-Sang Lee ◽  
Jin-Ho Shin ◽  
Doo-Chan Jung ◽  
...  
Keyword(s):  
Etching Technique ◽  
Photoelectrochemical Etching ◽  
Recessed Gate

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

2004 ◽  
Vol 43 (4B) ◽  
pp. 2255-2258 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keiji Ikeda ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Rf Performance ◽  
Recessed Gate

Porosification Analysis on the Effect of Resistivity Dependence on N-Type Pulsed Porous Silicon

2020 ◽  
Vol 301 ◽  
pp. 12-17
Author(s):  
Nurul Hanida Abd Wahab ◽  
Alhan Farhanah Abd Rahim ◽  
Ainorkhilah Mahmood ◽  
Noorezal Atfyinna Mohammed Napiah ◽  
Rosfariza Radzali ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Direct Current ◽  
Current Density ◽  
Cycle Time ◽  
Pulse Generator ◽  
Pulse Current ◽  
Etching Process ◽  
Homogeneous Structure ◽  
Photoelectrochemical Etching

A set of n-type porous silicon (PS) layers were fabricated by photoelectrochemical etching using direct current (DC) and pulse current (PC) techniques. The study aims to compare the effect of different resistivity (5 Ω and 10 Ω) on the formation of the PS structure. The samples were etched in a solution of HF:C2H6O with a composition ratio of 1:4. The etching process were done for 30 minutes with the current density of J = 10 mA/cm2. In the time of PC etching process, the current was supplied through a pulse generator with 14 ms cycle time (T) which the on time (Ton) set to 10 ms and pause time (Toff) set to 4 ms respectively. The samples were then being characterized in terms of surface morphology by using FESEM, AFM and XRD. Through the FESEM results, it can be seen that sample with 10 Ω resistivity which using PC form a more homogeneous structure of pores as compared to other samples.

Recessed Gate Processing for GaN/AlGaN-HEMTs

2006 ◽  
Vol 955 ◽  
Author(s):  
Wilfried Pletschen ◽  
Rudolf Kiefer ◽  
Brian Raynor ◽  
Stefan Mueller ◽  
Foud Benkhelifa ◽  
...  
Keyword(s):  
Etching Process ◽  
Cutoff Frequencies ◽  
Recessed Gate ◽  
Dry Etch

ABSTRACTA dry etch process based on Cl2/SF6 has been developed to selectively remove GaN over AlGaN for the fabrication of recessed gate GaN/AlGaN HEMTs. Using this etching process recessed and non-recessed FETs were fabricated side by side on the same wafer to provide a fair comparision of data. Recessed gate FETs with a gatelength of 0.15μm show cutoff frequencies of 83 and more than 200 GHz for fT and fmax, respectively. Furthermore, gate-drain breakdown as high as 84V has been obtained which is more than twice as much compared to their non-recessed counterparts.

scholarly journals Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Danqiong Hou ◽  
Griff L. Bilbro ◽  
Robert J. Trew
Keyword(s):  
Parameter Extraction ◽  
New Physics ◽  
Operating Conditions ◽  
Compact Modeling ◽  
Large Signal ◽  
New Model ◽  
Industry Standard ◽  
Rf Performance ◽  
Microwave Power Amplifier ◽  
Good Agreement

We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.

AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability

2004 ◽  
Vol 831 ◽  
Author(s):  
Alexei Koudymov ◽  
Salih Saygi ◽  
Naveen Tipirneni ◽  
Grigory Simin ◽  
Vinod Adivarahan ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Average Lifetime ◽  
Rf Power ◽  
Gate Leakage ◽  
Large Signal ◽  
Defect Accumulation ◽  
Algan Barrier ◽  
Stability Data ◽  
Rf Performance ◽  
The Comparative Study

ABSTRACTThe comparative study of the DC parameters and RF power stability of nitride-based conventional HFETs and Metal-Oxide-Semiconductor HFETs (MOSHFETs) is presented. The average lifetime under DC stress is estimated to be as high as 2.5 years at room temperature. Under the large-signal RF stress, the gate leakage current of conventional HFETs increases significantly with time showing faster degradation as compared to DC stressing. MOSHFETs demonstrate superior RF performance stability, which perfectly correlates with the DC stability data. It is shown that in conventional HFETs, the combination of the self-heating and positive dynamic gate bias leads to the defect accumulation in the AlGaN barrier under the gate. In MOSHFETs, the absence of the gate leakage is a key to stable RF performance.

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