XPS Studies on Composite TiO2-SiO2 Thin Films Deposited on Metal Substrate by Sol-Gel

2005 ◽  
Vol 475-479 ◽  
pp. 1647-1650 ◽  
Author(s):  
Xin Gang Yu ◽  
Hong Wen Ma ◽  
Fei Long ◽  
Hui Feng Zhao ◽  
Wenrue Bi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Sol Gel ◽  
Stable State ◽  
Weight Percent ◽  
Metal Substrate ◽  
Metal Substrates ◽  
Heat Treated

Through X-ray photoelectron spectroscopy, by the aid of Ar+ sputtering, chemical composition and the valence state of elements on surface and at depth of TiO2-SiO2 thin films and metal substrates have been studied. Results show that: on surface, elements of Cr, Mn, Ti, Fe exist in the form of their respective stable state, but Si is unstable and exhibits stoichiometrical disturbance when heat treated at 800°C; at depth, after sputtering for 5 minutes and 17 minutes, elements of Cr, Mn, Ti and Ni exist in the form of their respective stable state, but Si and Fe are unstable and exhibit stoichiometrical disturbances; at depth, after sputtering for 57 minutes, all of the Cr, Mn, Ti, Si, Ni and Fe exist in the form of their respective stable state. Results of chemical composition and their content by weight percent of TiO2-SiO2 thin films and metal substrates reveal that: Fe, Cr, and Mn diffuse from metal substrates to the thin films in scale; Ni diffuses few and Si collects to the metal substrate surface

XPS Studies on Composite ZrO2-CeO2 Thin Films Deposited on Metal Substrate by Sol-Gel

2007 ◽  
Vol 336-338 ◽  
pp. 2652-2654
Author(s):  
Xin Gang Yu ◽  
Lan Yun Liu ◽  
Yi Gong ◽  
Hong Wen Ma ◽  
Wen Yue Bi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Stable State ◽  
Metal Substrate ◽  
Bonding Energy ◽  
X Ray ◽  
Heat Treated ◽  
Heat Treated Temperature

The influence of heat-treated temperature and the CeO2 content on the chemical composition and the valence state of elements on surface of ZrO2-CeO2 thin films deposited on metal substrates has been studied by X-ray photoelectron spectroscopy. Results show that: elements of Fe, Cr, Zr, Ce exist in the form of their respective stable state, such as Fe2O3, (Fe0.6Cr0.4)O3, ZrO2, CeO2, when heat treated at 600°C and 700°C for 2h respectively; with the increase of heat-treated temperature, the area of oxygen with O1s peak corresponding to value of bonding energy 529.28ev increases, but the area of oxygen with O1s peak corresponding to value of bonding energy 531.7ev decreases.

XPS Studies on ZrO2 Thin Films Deposited on Glass Substrate by Sol-Gel

2008 ◽  
Vol 368-372 ◽  
pp. 1277-1279 ◽  
Author(s):  
Xin Gang Yu ◽  
Yi Gong ◽  
Wen Yue Bi ◽  
Xue Chun Tian ◽  
Hong Wen Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Valence State ◽  
Glass Substrate ◽  
Sol Gel ◽  
Stable State ◽  
X Ray ◽  
Glass Substrates ◽  
Heat Treated

The chemical composition and the valence state of elements on the surface of ZrO2 thin films deposited on glass substrates have been studied by X-ray photoelectron spectroscopy. Results show that: elements of Na, Mg, Zr, Ca exist in the form of their respective stable state, such as Na2O, MgO, ZrO2, CaO, when heat treated at 500°C for 0.5h; but Si is unstable, and exhibit stoichiometrical disturbances. Results of chemical composition and their content by atom percent of ZrO2 thin films surface reveal that: Si, and Ca diffuse from glass to the thin films in scale; Na diffuses few and Mg collects to the thin films surface. The diffusion of Mg2+ and Ca2+ from glass to ZrO2 thin films is negative diffusion.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Chemical Analyses of Sol/Gel Surfaces and Thin Films

1984 ◽  
Vol 32 ◽  
Author(s):  
Carlo G. Pantano ◽  
C. A. Houser ◽  
R. K. Brow
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Silica Films ◽  
Alumina Films ◽  
Surface Analysis Techniques ◽  
Relative Water ◽  
Temperature Programmed

ABSTRACTThe application of surface analysis techniques to the characterization of sol/gel surfaces and thin films is described. Secondary-ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS) and sputter-induced photon spectroscopy (SIPS) are used to measure the composition of multicomponent silicate films, the relative water content of alumina films, the nitrogen content of ammonia treated silica films, and the depth profiles for films on black chrome. The determination of chemical structure using XPS and SIMS is also discussed. Finally, a brief introduction to temperature-programmed desorption (TPD) and its potential for studying surface chemical reactions, in situ, is presented.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

XPS Studies on Composite TiO2-SiO2 Thin Films Deposited on Metal Substrate by Sol-Gel

2005 ◽  
pp. 1647-1650
Author(s):  
Xingang Yu ◽  
Hong Wen Ma ◽  
Fei Long ◽  
Hui Feng Zhao ◽  
Wenrue Bi ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Metal Substrate

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

scholarly journals Silica-Copper Oxide Composite Thin Films as Solar Selective Coatings Prepared by Dipping Sol Gel

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
E. Barrera-Calva ◽  
J. Méndez-Vivar ◽  
M. Ortega-López ◽  
L. Huerta-Arcos ◽  
J. Morales-Corona ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Copper Oxide ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Silica Matrix ◽  
Composite Thin Films ◽  
X Ray ◽  
Molar Ratios ◽  
Steel Substrates

Silica-copper oxide (silica-CuO) composite thin films were prepared by a dipping sol-gel route using ethanolic solutions comprised TEOS and a copper-propionate complex. Sols with different TEOS/Cu-propionate (Si/Cu) molar ratios were prepared and applied on stainless steel substrates using dipping process. During the annealing process, copper-propionate complexes developed into particulate polycrystalline CuO dispersed in a partially crystallized silica matrix, as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. The gel thermal analysis revealed that the prepared material might be stable up to400°C. The silica-CuO/stainless steel system was characterized as a selective absorber surface and its solar selectivity parameters, absorptance (α), and emittance (ε) were evaluated from UV-NIR reflectance data. The solar parameters of such a system were mostly affected by the thickness and phase composition of theSiO2-CuO film. Interestingly, the best solar parameters (α= 0.92 andε= 0.2) were associated to the thinnest films, which comprised a CuO-Cu2Omixture immersed in the silica matrix, as indicated by XPS.

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