Manufacture of Al/SiC Composites by Pressure Infiltration Process

2005 ◽  
Vol 475-479 ◽  
pp. 913-916
Author(s):  
Fa Zhang Yin ◽  
Cheng Chang Jia ◽  
Xuezhen Mei ◽  
Bin Ye ◽  
Yanlei Ping ◽  
...  

The SiCp performing sample was made first then Al/SiCp (65%) was manufactured. Appropriate component and proportion of binder and process parameters were selected to control the porosity. Debinding has succeeded by extractive and thermal debinding processes. SiCp preforming samples with good appearance, enough strength, and right porosity were obtained by pre-sintering process at 1100°C. Composites with high density and homogeneous microstructure were manufactured by pressure infiltration under 1050°C and 15MPa. The distribution of aluminium and silicon elements was homogeneous. The primary components of materials are aluminium, β-SiC and α-SiC. The thermal expand coefficient of composites is 8.0×10-6/°C at room temperature, which increases with temperature and reaches to 11.0×10-6/°C at 300°C. The density is 2.92g/cm3, and relative density is more than 97 %. The strength is about 500MPa, approaching to the upper limit of the theoretical value.

1999 ◽  
Vol 14 (11) ◽  
pp. 4239-4245 ◽  
Author(s):  
Mario Aparicio ◽  
Alicia Durán

An infiltration process that uses silica sol-gel solutions was developed to protect C/SiC composites against oxidation. The infiltration is assisted using isostatic pressure. Different process parameters including substrate porosity and solution concentration and viscosity were varied to optimize the infiltration effectiveness. Applied pressure enhances penetration of solutions, reducing the importance of viscosity, an important process variable for dipping infiltration. The effectiveness of the isostatic pressure infiltration method, evaluated through the total weight gains and pore-size distribution of infiltrated samples, is compared with results of dipping infiltration. The oxidation behavior of the infiltrated samples, was evaluated by stepwise oxidation test as well as isothermal tests at 1200 and 1600 °C. The infiltrated SiO2 protects the C/SiC substrate, reducing the burnoff rate of C fibers at low temperature and delaying the oxidation of SiC.


2005 ◽  
pp. 913-916
Author(s):  
Fa Zhang Yin ◽  
Cheng Chang Jia ◽  
Xuezhen Mei ◽  
Bin Ye ◽  
Yanlei Ping ◽  
...  

2013 ◽  
Vol 749 ◽  
pp. 44-48 ◽  
Author(s):  
Husieh Liang Chu ◽  
Cheng Li Wang ◽  
Huey Er Lee ◽  
Yu You Sie ◽  
Rong Sheng Chen ◽  
...  

The effect of sintering process parameters on the properties of 3 mol% yttria partially stability zirconia (3Y-PSZ) ceramics has been investigated. The relative density of the sintered pellet rapidly increases from 70.5 to 93.6 % with rose temperature from 1473 to 1573 K. In addition, the relative density only slightly increases from 94.9 to 96.6 %, when rose sintered temperature from 1573 to 1773 K. This result shows that no significant influence on the densification behavior when sintering at 1573 to 1773 K for 2 h. The Vickers hardness and toughness also increase with the sintered temperature.


2007 ◽  
Vol 353-358 ◽  
pp. 1564-1567 ◽  
Author(s):  
Hai Long Wang ◽  
Chang An Wang ◽  
Rui Zhang ◽  
Xing Hu ◽  
Dai Ning Fang

In this paper, ZrB2-based ceramics containing up to 15 vol% nano-SiC whiskers were prepared by hot pressing at 1950°C under 20MPa pressure in flow argon. SEM and XRD techniques were used to characterize the sintered compacts. A fine and homogeneous microstructure was observed. The relative density of ZrB2-based ceramic containing 10vol% SiC whiskers reached to 97.7%. The bending strength and fracture toughness of the composite were 550 MPa and 8.08 MPa·m1/2 respectively, while those of the monolithic ZrB2 ceramic (0 vol% SiC whiskers added) were 424 MPa and 4.52 MPa·m1/2 respectively. The grain size of the ZrB2-based ceramics was reduced greatly by the addition of nano-SiC whiskers during the sintering process.


2010 ◽  
Vol 105-106 ◽  
pp. 218-221 ◽  
Author(s):  
Xuan Liu ◽  
Qiang Xu ◽  
Shi Zhen Zhu

ZrB2-SiC-B4C is sintered at 1700°C by spark plasma sintering process. The effect of B4C content on the mechanical properties and microstructure of ZrB2-SiC based ceramics is studied. The results show that, with the content of B4C increases, the relative density and room-temperature strength decrease in the ZrB2-SiC-B4C composite. The fracture toughness rises at first and then falls down. The high temperature strength increases.


2004 ◽  
Vol 261-263 ◽  
pp. 1475-1480 ◽  
Author(s):  
Sang Ll Lee ◽  
J.O. Jin ◽  
Akira Kohyama

The characterization of RS-SiC and RS-SiCf/SiC composite materials fabricated by the reaction sintering process has been investigated, based on the detailed examination of their microstructures. In this composite system, Tyranno SA SiC fiber and Hi-Nicalon SiC fiber were used as reinforcing materials. The green bodies for RS-SiC and RS-SiCf/SiC materials were prepared with the complex matrix slurry of SiC and C particles. The density and the room temperature strength of RS-SiC material with the starting SiC particles of 0.3 µm showed about 3.1 Mg/m3 and about 520 MPa, respectively, even if there were large amount of residual silicon (about 19 %). The flexural strength of Hi-Nicalon/SiC composites greatly decreased at the temperature higher than 1000 􀀀


2020 ◽  
Vol 12 (10) ◽  
pp. 1328-1333
Author(s):  
Ankur Sharma ◽  
D. B. Karunakar

Zirconium Diboride (ZrB2) is known as an ultra-high temperature ceramic with applications in various industries like refractory and foundry industries. In conjunction with Silicon Carbide (SiC), ZrB2 ceramic finds extensive applications in the nose caps and leading edges of atmospheric re-entry vehicles and rocket propulsion. The primary objective is to optimize the output responses viz., Vickers micro hardness, relative density, compressive strength of ZrB2-30 vol.% SiC composites developed through microwave sintering. The three control factors viz., sintering temperature, heating rate and holding time are chosen as input process parameters for microwave sintering. Taguchi’s L9 orthogonal array is used to obtain experimental runs. The Grey Relational Taguchi provides the optimal process parameters by binding the multiple responses (relative density, vickers micro-hardness, and compressive strength) into single comprehensive response [i.e., Grey Relational Grade (GRG)]. The results confirm that the optimal parameters attained using Grey Relational Taguchi maximize the performance characteristics of the microwave sintering process.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Ghadami ◽  
E. Taheri-Nassaj ◽  
H. R. Baharvandi ◽  
F. Ghadami

AbstractHfB2, Si, and activated carbon powders were selected to fabricate 0–30 vol% SiC reinforced HfB2-based composite. Pressureless sintering process was performed at 2050 °C for 4 h under a vacuum atmosphere. Microstructural studies revealed that in situ SiC reinforcement was formed and distributed in the composite according to the following reaction: Si + C = SiC. A maximum relative density of 98% was measured for the 20 vol% SiC containing HfB2 composite. Mechanical investigations showed that the hardness and the fracture toughness of these composites were increased and reached up to 21.2 GPa for HfB2-30 vol% SiC and 4.9 MPa.m1/2 for HfB2-20 vol% SiC, respectively. Results showed that alpha-SiC reinforcements were created jagged, irregular, and elongated in shape which were in situ formed between HfB2 grains and filled the porosities. Formation of alpha-SiC contributed to improving the relative density and mechanical properties of the composite samples. By increasing SiC content, an enhanced trend of thermal conductivity was observed as well as a reduced trend for electrical conductivity.


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