Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
2005 ◽
Vol 483-485
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pp. 225-228
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Thick (111) oriented β-SiC layers have been grown by hetero-epitaxy on a (0001) a-SiC substrate with the Continuous Feed-Physical Vapour Transport (CF-PVT) method. The growth rate was 68 µm/h at a pressure of 2 torr and a temperature of 1950°C. The nucleation step of the β-SiC layer during the heating up of the process was studied in order to manage first the a to b heteropolytypic transition and second the selection of the b-SiC orientation. With a adapted seeding stage, we grew a 0.4mm thick layer almost free of Double Positioning Boundaries on a 30mm diameter sample. First observations of the layer by cross-polarised optical Microscopy are presented both in planar view and in cross section geometry.
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1971 ◽
Vol 76
(1)
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pp. 143-156
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2012 ◽
Vol 27
(2)
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pp. 264-269
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2000 ◽
Vol 41
(4-5)
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pp. 503-508
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2021 ◽
Vol 1111
(1)
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pp. 012069
2019 ◽
Vol 495
(1)
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pp. L124-L128
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