Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing

2005 ◽  
Vol 483-485 ◽  
pp. 725-728 ◽  
Author(s):  
Oleg A. Agueev ◽  
Sergey P. Avdeev ◽  
Alexander M. Svetlichnyi ◽  
Raisa V. Konakova ◽  
Victor V. Milenin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Surface Morphology ◽  
Barrier Height ◽  
Sheet Resistance ◽  
Ideality Factor ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
The Mean ◽  
Surface Sheet

An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It was found that the mean roughness of the n-6H-SiC surface decreased from 3.43 nm to 1.35 nm and the surface sheet resistance increased from 3.1 to 4.0 Ω/sq after EBA. The Ti/n-6H-SiC contacts formed on substrates after EBA exhibited ohmic properties, while the same contacts formed on the un-annealed samples were Schottky contacts with the barrier height of 0.63 eV and ideality factor of 1.92.

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

scholarly journals The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 1111-1114 ◽  
Author(s):  
Ji Sheng Han ◽  
Philip Tanner ◽  
Sima Dimitrijev ◽  
Qu Shuang ◽  
Yan Shen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Barrier Height ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
Si Substrates ◽  
Contact Barrier ◽  
The Impact ◽  
Substrate Temperatures ◽  
Effect Of Surface

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

TEMPERATURE-DEPENDENT MODIFICATIONS OF Ag/SiO2/p-Si SCHOTTKY CONTACTS FORMED AT 20 K

2010 ◽  
Vol 09 (03) ◽  
pp. 135-138
Author(s):  
A. ALI ◽  
M. YASAR ◽  
F. NASIM ◽  
A. S. BHATTI
Keyword(s):  
Grain Size ◽  
Barrier Height ◽  
Ideality Factor ◽  
Thermal Evaporation ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Ideal Behavior ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
Increasing Temperature

The Schottky contacts of Ag/SiO2 /p- Si were fabricated by thermal evaporation at 20 K. The effect of annealing temperatures varying from 373 to 773 K on the morphology and electrical properties of these contacts was investigated. The average grain size increased while the density of grains decreased with increasing temperature. Ideality factor initially observed was as high as 4.15 with a low barrier height of 0.04 eV for contact grown at 20 K. Annealing resulted in shift of ideality factor and barrier height towards ideal behavior. Thus, it is demonstrated that Ag/SiO2 /p- Si contacts grown at low temperature can be modified by annealing.

scholarly journals Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

2013 ◽  
Vol 211 (1) ◽  
pp. 40-47 ◽  
Author(s):  
Daniel Splith ◽  
Stefan Müller ◽  
Florian Schmidt ◽  
Holger von Wenckstern ◽  
Johan Janse van Rensburg ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Barrier Height ◽  
Pulsed Laser ◽  
Schottky Contacts ◽  
Laser Deposition ◽  
The Mean

Influence of annealing temperature on the electrical, structural and surface morphology properties of Au/Cr Schottky contacts on n-type InP

2014 ◽  
Vol 5 (3) ◽  
pp. 823-836 ◽  
Author(s):  
Bhaskar Reddy M
Keyword(s):  
Surface Morphology ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Annealing Temperature ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Schottky Contacts ◽  
Current Voltage ◽  
Optimum Annealing Temperature

The influence of rapid thermal annealing on the electrical and structural properties of Au/Cr/n-InP Schottky diode havebeen investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and X-raydiffraction (XRD) measurements. The Schottky barrier height (SBH) and ideality factor (n) of the as-deposited Au/Cr/n-InPSchottky diode are 0.51 eV (I-V)/0.64 eV (C-V) and 1.81, respectively. When the contact is annealed at 200 oC in N2atmosphere for 1min, a maximum SBH (0.71 eV (I-V)/0.81 eV (C-V)) and low ideality factor (1.15) are achieved for theAu/Cr/n-InP Schottky diode. However, after annealing at 300 oC, the SBH slightly decreases to 0.58 eV (I-V)/0.69 eV (CV),and ideality factor increases to 1.45, respectively. The SBHs obtained from the Norde and Cheung’s methods areclosely matched with those obtained from the I-V method. Results show that the optimum annealing temperature for theAu/Cr/n-InP Schottky diode is 200 °C. Further, the discrepancy between SBHs calculated from I-V and C-V methods isalso discussed. Moreover, the energy distribution of interface state density is estimated from forward bias I-Vcharacteristics at different annealing temperatures. AES and XRD studies reveal that the formation of indium (In) phasesat Au/Cr and InP interface may be the cause for the increase in SBH after annealing at 200 oC. The AFM results show thatthe overall surface morphology of Au/Cr Schottky contacts is considerably smooth at elevated tempratures.

Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo

2005 ◽  
Vol 108-109 ◽  
pp. 561-566 ◽  
Author(s):  
F. Danie Auret ◽  
A.G.M. Das ◽  
C. Nyamhere ◽  
M. Hayes ◽  
N.G. van der Berg
Keyword(s):  
Thermal Stability ◽  
Electron Beam ◽  
Barrier Height ◽  
Deep Level ◽  
Schottky Contact ◽  
Depletion Region ◽  
Schottky Contacts ◽  
Electron Beam Deposition ◽  
Transient Spectroscopy ◽  
Beam Deposition

In this study we have investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam deposition (EBD) of Ti and Ti/Mo Schottky contacts. The depletion regions below these contacts were probed by conventional deep level transient spectroscopy (DLTS) as well as Laplace (high-resolution) DLTS (L-DLTS). We have chosen Ti as the Schottky contact because the barrier height of Ti/p-Si (0.53 eV) is close to that of TiSi2/p-Si (0.50 eV) that forms after annealing at 600 – 650 oC. The Mo was added on top of the Ti in order to prevent annealing degradation. These contacts were annealed in Ar at temperatures of up to 900 oC in 100 oC steps for half-hour periods. Current – voltage (I-V) and capacitance – voltage (C-V) measurements were used to monitor the quality of the Schottky contacts. DLTS was performed after each annealing cycle to monitor the presence of the EBD-induced defects and to obtain heir electronic properties. We have found that that the Ti/Mo contacts were superior to the Ti contacts. Their (Ti/Mo) barrier height after EBD was 0.52 eV and it gradually increased to 0.56 eV after annealing at 500 oC - 600oC and then dropped to 0.50 eV annealing at 700 oC. DLTS revealed that the main defects introduced during metallization are hole traps H(0.17), H(0.23), H(0.37) and H(0.49). Annealing at 350 oC introduced an additional hole trap H(0.39). After annealing at 550 oC all defects were removed from the depletion region.

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