Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

2007 ◽  
Vol 556-557 ◽  
pp. 137-140 ◽  
Author(s):  
Lucia Calcagno ◽  
Gaetano Izzo ◽  
Grazia Litrico ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Growth Process ◽  
Electrical Characterization ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Electrical Measurements ◽  
Deposition Chamber ◽  
Order Of Magnitude

High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microscopy shows an improvement of the surface morphology and luminescence measurements reveal a decrease of epitaxial layer defects with increasing the Cl/Si ratio in the range 0.05–2.0. The leakage current measured on the diodes realized on these wafers is reduced of an order of magnitude and DLTS measurements show a decrease of the EH6,7 level concentration in the same range of Cl/Si ratio. The value Cl/Si=2.0 allows to grow epitaxial layers with the lowest defect concentration.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

2006 ◽  
Vol 527-529 ◽  
pp. 199-202 ◽  
Author(s):  
Francesco La Via ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Growth Parameters ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Maximum Growth ◽  
Deposition Process ◽  
Maximum Growth Rate ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Dilution Ratio

The influence of the epitaxial layer growth parameters on the electrical characteristics of Schottky diodes has been studied in detail. Several diodes were manufactured on different epitaxial layers grown with different Si/H2 ratio and hence with different growth rates. From the electrical characterization a maximum silicon dilution ratio can be fixed at 0.04 %. This limit fixes also a maximum growth rate that can be obtained in the epitaxial growth, with this process, at about 8 μm/h. Several epitaxial layers have been grown, using this dilution ratio, with different temperatures (1550÷1650 °C). At 1600 °C the best compromise between the direct and the reverse characteristics has been found. With this process the yield decreases from 90% for a Schottky diode area of 0.25 mm2 to 61% for the 2 mm2 diodes. Optimizing the deposition process to reduce the defects introduced by the epitaxial process, yield of the order of 80% can be reached on 1 mm2 diodes.

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

2006 ◽  
Vol 527-529 ◽  
pp. 179-182 ◽  
Author(s):  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Abbondanza ◽  
F. Portuese ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Epitaxial Layer ◽  
Growth Rates ◽  
High Growth ◽  
Droplet Formation ◽  
Layer Growth ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
Carbon Precursor

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

2012 ◽  
Vol 717-720 ◽  
pp. 193-196 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Björn Lundqvist ◽  
Philip Hens ◽  
Rickard Liljedahl ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Growth Process ◽  
High Growth ◽  
Potential Method ◽  
High Growth Rate ◽  
Heteroepitaxial Growth ◽  
Bulk Properties ◽  
Combined Use ◽  
Sublimation Growth

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 °C to 1850°C), and the growth ambient (vacuum at 5*10-5mbar and nitrogen at 5*10-1mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

2014 ◽  
Vol 778-780 ◽  
pp. 113-116 ◽  
Author(s):  
Albert A. Burk ◽  
D. Tsvetkov ◽  
Michael J. O'Loughlin ◽  
S. Ustin ◽  
L. Garrett ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Unit Area ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Market Penetration ◽  
Temperature Uniformity ◽  
Cycle Times ◽  
The Cost ◽  
Defect Densities ◽  
Initial Results

Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short <2 hr fixed-cycle times (including rapid heat-up and cool-down ramps), while maintaining desirable epitaxial layer quality were achieved. Increased quantities of 150-mm epitaxial wafers now allow statistical analysis of their epitaxial layer properties. Specular epitaxial layer morphology was obtained, with morphological defect densities <0.4 cm-2, consistent with projected 5x5 mm die yields averaging 93% for Si-face epitaxial layers between 10 and 30 microns thick. Intrawafer thickness and doping uniformity are good, averaging 1.7% and 5.1% respectively. Wafer-to-wafer doping variation has also been significantly reduced from ~12 [5] to <3% s/mean. Initial results for C-face growths show excellent morphology (97%) but poor doping uniformity (~16%). Wafer shape is relatively unchanged by epitaxial growth consistent with good epitaxial temperature uniformity.

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

2007 ◽  
pp. 137-140
Author(s):  
Lucia Calcagno ◽  
Gaetano Izzo ◽  
G. Litrico ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Electrical Characterization ◽  
Layer Growth

Very High Growth Rate Epitaxy Processes with Chlorine Addition

2007 ◽  
Vol 556-557 ◽  
pp. 157-160 ◽  
Author(s):  
Francesco La Via ◽  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

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