On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

2012 ◽  
Vol 717-720 ◽  
pp. 193-196 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Björn Lundqvist ◽  
Philip Hens ◽  
Rickard Liljedahl ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Growth Process ◽  
High Growth ◽  
Potential Method ◽  
High Growth Rate ◽  
Heteroepitaxial Growth ◽  
Bulk Properties ◽  
Combined Use ◽  
Sublimation Growth

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 °C to 1850°C), and the growth ambient (vacuum at 5*10-5mbar and nitrogen at 5*10-1mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.

II-VI Material Integration With Silicon for Detector and PV Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3391-3402 ◽  
Author(s):  
T.A. Gessert ◽  
E. Colegrove ◽  
B. Stafford ◽  
R. Kodama ◽  
Wei Gao ◽  
...  
Keyword(s):  
Growth Process ◽  
High Efficiency ◽  
Photovoltaic Devices ◽  
Heteroepitaxial Growth ◽  
Ir Detector ◽  
Ir Detectors ◽  
Growth Environment ◽  
Si Substrates ◽  
Conversion Efficiencies

ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Development of LPE process for fabrication of coated conductors

2000 ◽  
Vol 659 ◽  
Author(s):  
Teruo Izumi ◽  
Natsuro Hobara ◽  
Toru Izumi ◽  
Katsuya Hasegawa ◽  
Masahiko Kai ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Recent Progress ◽  
High Growth ◽  
High Growth Rate ◽  
Coated Conductors ◽  
The Other ◽  
Lower Growth ◽  
The Difference ◽  
Lower Growth Temperature ◽  
Selection Of

ABSTRACTRecent Progress of development for coated conductors by the LPE technique was reviewed. Double layered LPE films were applied to the growth on metal substrates. In both cases of MgO- and NiO- buffers, the constructions were succeeded to grow on Hastelloy and Ni tapes, respectively. In the case of the MgO-buffer, the problem, which is the melting back of the 1st LPE layer during dipping for the growth of the 2nd LPE layer, was found. The problem was solved by means of the selection of the materials for each LPE layer to introduce the difference in the growth temperature for the 1st and the 2nd layers. The lower growth temperature for the 1st LPE layer than that for 2nd one is effective to avoid the problem. On the other hand, the double layered LPE films on Ni tapes revealed Tc of 85K. Concerning the long tape processing, the high growth rate of 1≈ was confirmed even without rotation using the long tape apparatus.

A new mechanism in the growth process of GaN by HVPE

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Trassoudaine ◽  
E. Aujol ◽  
R. Cadoret ◽  
T. Paskova ◽  
B. Monemar
Keyword(s):  
Mass Transfer ◽  
Experimental Study ◽  
Growth Rate ◽  
Theoretical Analysis ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
General Mechanism ◽  
Surface Kinetics ◽  
Mechanism Of Growth

ABSTRACTExperimental results obtained in two different HVPE reactors are analyzed and compared to the theoretical curves, taking into account the surface kinetics, the mass transfer, and parasitic deposition on the glass walls before the substrate. Unexpected high growth rate values, up to 50νm/h, were measured in conditions of expected substrate etching by HCl. A systematic experimental study of this new phenomenon is presented together with a theoretical analysis. This analysis suggests a new mixed general mechanism of growth.

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 133-136 ◽  
Author(s):  
Takanori Tanaka ◽  
Naoyuki Kawabata ◽  
Yoichiro Mitani ◽  
Masashi Sakai ◽  
Nobuyuki Tomita ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Throughput ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Pressure Condition ◽  
High Quality ◽  
Growth Pressure ◽  
Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga0.5In0.5P

1993 ◽  
Vol 312 ◽  
Author(s):  
Sarah R. Kurtz ◽  
J. M. Olson ◽  
D. J. Arent ◽  
A. E. Kibbler ◽  
K. A. Bertness
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Band Gap ◽  
Growth Temperature ◽  
Growth Parameter ◽  
High Growth ◽  
High Growth Rate ◽  
Temperature Growth ◽  
Rate Region ◽  
Thermodynamic Processes

AbstractThe band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in “U” shaped curves. Each “U” shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.

Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace

2006 ◽  
Vol 527-529 ◽  
pp. 267-270 ◽  
Author(s):  
Chi Kwon Park ◽  
Joon Ho An ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Shigehiro Nishino
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
High Growth ◽  
High Growth Rate ◽  
Working Pressure ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
Etched Surface ◽  
Sublimation Growth

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate (30 μm/h) exhibited a low etch pit density (EPD) of ~2000 /cm2 and a low micropipe density (MPD) of 2 /cm2. The etched surface of a SiC epitaxial layer grown with a high growth rate (above 100 μm/h) contained a high EPD of ~3500 /cm2 and a high MPD of ~500 /cm2, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Low Temperature Lateral Epitaxial Growth of Silicon Carbide on Silicon

2000 ◽  
Vol 622 ◽  
Author(s):  
Chacko Jacob ◽  
Juyong Chung ◽  
Moon-Hi Hong ◽  
Pirouz Pirouz ◽  
Shigehiro Nishino
Keyword(s):  
Epitaxial Growth ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
Defect Density ◽  
Chemical Vapor ◽  
High Growth ◽  
Heteroepitaxial Growth ◽  
Oxide Degradation ◽  
Pressure Chemical ◽  
Continued Use

ABSTRACTTo reduce the defect density inherent in conventional heteroepitaxial growth of SiC on Si, selective epitaxy followed by lateral epitaxial growth was performed in a conventional atmospheric pressure chemical vapor deposition (APCVD) system. The source gas was primarily hexamethyldisilane (HMDS). Hydrogen was used as the carrier gas and small amounts of hydrogen chloride (HCl) were added to improve the selectivity. Si(001) wafers, with an oxide layer (∼ 700 nm thick) as a mask, were used as substrates. The grown films were analyzed using optical microscopy and scanning electron microscopy (SEM). In earlier work, we had demonstrated the problems associated with the application of this technique – viz., oxide degradation and high growth temperature. Using HMDS, the growth temperature has been considerably reduced allowing the continued use of an oxide mask. Selective growth was demonstrated in films grown at 1250° and below.

Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

2007 ◽  
Vol 556-557 ◽  
pp. 137-140 ◽  
Author(s):  
Lucia Calcagno ◽  
Gaetano Izzo ◽  
Grazia Litrico ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Growth Process ◽  
Electrical Characterization ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Electrical Measurements ◽  
Deposition Chamber ◽  
Order Of Magnitude

High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microscopy shows an improvement of the surface morphology and luminescence measurements reveal a decrease of epitaxial layer defects with increasing the Cl/Si ratio in the range 0.05–2.0. The leakage current measured on the diodes realized on these wafers is reduced of an order of magnitude and DLTS measurements show a decrease of the EH6,7 level concentration in the same range of Cl/Si ratio. The value Cl/Si=2.0 allows to grow epitaxial layers with the lowest defect concentration.

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