High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 93-96 ◽  
Author(s):  
Hrishikesh Das ◽  
Swapna G. Sunkari ◽  
Timothy Oldham ◽  
Janna R. B. Casady ◽  
Jeff B. Casady
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Growth Process ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
High Uniformity ◽  
Highly Uniform ◽  
Reduced Surface

In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm).

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

2006 ◽  
pp. 153-158
Author(s):  
Takashi Aigo ◽  
M. Sawamura ◽  
Tatsuo Fujimoto ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Reduced Surface

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

2005 ◽  
Vol 483-485 ◽  
pp. 73-76 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Olof Kordina ◽  
Z. Shishkin ◽  
Shailaja P. Rao ◽  
R. Everly ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Hydrogen Chloride ◽  
Growth Rates ◽  
Growth Process ◽  
Cluster Formation ◽  
Film Morphology ◽  
Hydrogen Carrier ◽  
Low Crystalline

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices

2005 ◽  
Vol 483-485 ◽  
pp. 141-146 ◽  
Author(s):  
Bernd Thomas ◽  
Christian Hecht
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Crystal Quality ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Force Microscopy ◽  
Atomic Force ◽  
In Doping

In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5x3” or 7x2” wafers per run. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity in doping and thickness were grown. The intra-wafer as well as the wafer-to-wafer homogeneity will be illustrated by doping and thickness mappings of a full-loaded run. Surface morphology of epitaxial layers on 8° and 4° off-oriented wafers was investigated by atomic force microscopy.

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 193-196 ◽  
Author(s):  
Akira Miyasaka ◽  
Jun Norimatsu ◽  
Keisuke Fukada ◽  
Yutaka Tajima ◽  
Yoshiaki Kageshima ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Production Technology ◽  
Smooth Surface ◽  
Growth Parameters ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
High Uniformity

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.

150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 153-156 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Li Ping Lv ◽  
Wei Ning Qian ◽  
Yi Yang Li ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Growth Process ◽  
Doping Concentration ◽  
Layer Growth ◽  
The Other ◽  
Edge Exclusion

Homo-epitaxial growth of 4H-SiC on 4o off-axis 150 mm diameter substrates has been performed in a commercial warm-wall multi-wafer planetary reactor. Based on our well developed 100 mm 4H-SiC epitaxial growth process, which can achieve excellent thickness and doping uniformities (δ/mean) of <1% and <5%, respectively, the growth process and hardware were further fine-tuned and improved for 150 mm 4H-SiC homoepitaxy. After the improvement, the 6 to7 μm thick epilayer uniformity has reached 1.1% with a 5mm edge exclusion while the doping uniformity has improved to 16.5% (<10%) with an edge exclusion of 5 mm (10mm), respectively. Surface roughness of the as-grown 150 mm 4H-SiC epitaxial layer has an RMS value of 0.12 nm scanned by AFM on 20×20 μm2 areas. Homo-epitaxial growth on C-face 150 mm 4H-SiC substrates has also been carried out. Other than the doping concentration and uniformity, the other results are very close to the epi-growth on Si-face.

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

2007 ◽  
Vol 556-557 ◽  
pp. 57-60
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Layer Thickness ◽  
Process Parameters ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Designed Experiments ◽  
Planetary Rotation ◽  
Designed Experiment ◽  
Resultant Effect

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

2012 ◽  
Vol 717-720 ◽  
pp. 161-164 ◽  
Author(s):  
Louise Lilja ◽  
Jawad ul Hassan ◽  
I.D. Booker ◽  
Peder Bergman ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Epitaxial Growth ◽  
Carrier Lifetime ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Afm Analysis

Carrier lifetime has been studied as a function of C/Si ratio and growth rate during epitaxial growth of n-type 4H-SiC using horizontal hot-wall CVD. Effort has been put on keeping all growth parameters constant with the exception of the parameter that is intended to vary. The carrier lifetime is found to decrease with increasing growth rate and the highest carrier lifetime is found for a C/Si ratio of 1. The surface roughness was correlated with epitaxial growth conditions with AFM analysis.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

2016 ◽  
Vol 858 ◽  
pp. 189-192 ◽  
Author(s):  
Gan Feng ◽  
Yong Qiang Sun ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
Jian H. Zhao ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Efficiency ◽  
Conversion Ratio ◽  
Epitaxial Layers ◽  
Initial Surface ◽  
Surface Conditions

The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

2006 ◽  
Vol 527-529 ◽  
pp. 179-182 ◽  
Author(s):  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Abbondanza ◽  
F. Portuese ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Epitaxial Layer ◽  
Growth Rates ◽  
High Growth ◽  
Droplet Formation ◽  
Layer Growth ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
Carbon Precursor

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.

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