Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
2016 ◽
Vol 858
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pp. 189-192
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Keyword(s):
The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.
Keyword(s):
2012 ◽
Vol 717-720
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pp. 93-96
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Keyword(s):
2016 ◽
Vol 858
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pp. 193-196
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Keyword(s):
2005 ◽
Vol 483-485
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pp. 141-146
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Keyword(s):
2007 ◽
Vol 556-557
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pp. 57-60
Keyword(s):
2012 ◽
Vol 717-720
◽
pp. 133-136
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Keyword(s):
2012 ◽
Vol 717-720
◽
pp. 141-144
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