Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET

2007 ◽  
Vol 556-557 ◽  
pp. 995-998 ◽  
Author(s):  
Robin L. Kelley ◽  
Michael S. Mazzola ◽  
William L. Draper

The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.

Author(s):  
Sathiyamoorthy S ◽  
Gopinath M

Power Factor Correction (PFC) has become one of the most active research areas in the field of power electronics due to the surplus power required for various industrial applications around the world. In this work, a novel SEPIC converter with the Tapped Inductor model operating in Discontinuous Conduction Mode (TI-SEPIC- DCM) is proposed for PFC. The proposed TI-SEPIC-DCM improves the voltage gain through voltage multiplier cell and charge pump circuit. The voltage multiplier cell also helps in attaining the Zero-Voltage Switching (ZVS) and Zero-Current Switching (ZCS), which results in higher switching frequency and size reduction. Moreover, a third order harmonic reduction control loop has been proposed for better harmonic mitigation. The proposed work has been simulated in MATLAB and the results are obtained to validate the significance of the proposed TI-SEPIC- DCM with near unity power factor and reduced harmonics.


Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.


2020 ◽  
pp. 99-107
Author(s):  
Erdal Sehirli

This paper presents the comparison of LED driver topologies that include SEPIC, CUK and FLYBACK DC-DC converters. Both topologies are designed for 8W power and operated in discontinuous conduction mode (DCM) with 88 kHz switching frequency. Furthermore, inductors of SEPIC and CUK converters are wounded as coupled. Applications are realized by using SG3524 integrated circuit for open loop and PIC16F877 microcontroller for closed loop. Besides, ACS712 current sensor used to limit maximum LED current for closed loop applications. Finally, SEPIC, CUK and FLYBACK DC-DC LED drivers are compared with respect to LED current, LED voltage, input voltage and current. Also, advantages and disadvantages of all topologies are concluded.


2014 ◽  
Vol 2 (3) ◽  
pp. 17-24
Author(s):  
V. Ramesh ◽  
◽  
K. Reddy Swathi ◽  
R. Lokeswar Reddy ◽  
E. Venkatachalapathi ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
Cao Taiqiang ◽  
Chen Zhangyong ◽  
Wang Jun ◽  
Sun Zhang ◽  
Luo Qian ◽  
...  

In order to implement a high-efficiency bridgeless power factor correction converter, a new topology and operation principles of continuous conduction mode (CCM) and DC steady-state character of the converter are analyzed, which show that the converter not only has bipolar-gain characteristic but also has the same characteristic as the traditional Boost converter, while the voltage transfer ratio is not related with the resonant branch parameters and switching frequency. Based on the above topology, a novel bridgeless Bipolar-Gain Pseudo-Boost PFC converter is proposed. With this converter, the diode rectifier bridge of traditional AC-DC converter is eliminated, and zero-current switching of fast recovery diode is achieved. Thus, the efficiency is improved. Next, we also propose the one-cycle control policy of this converter. Finally, experiments are provided to verify the accuracy and feasibility of the proposed converter.


In this paper, a single switch single stage switched inductor based cuk converter with power factor correction control techniques is proposed. The main features of the proposed converter is low current stress, high voltage conversion ratio, reduction of components, high efficiency, low THD, etc., The operation of the proposed converter is explained in several modes along with the design of the converter. The performance of the proposed converter with different loads such as resistive, battery and motor loads with CC and CV control is analyzed and various factors such as power factor, efficiency and THD are compared. The Simulation work is carried out in MATLAB/Simulink software.


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