Fabrication and Analysis of Nano-Aluminum-Induced Low-Temperature Polycrystalline Silicon Film

2008 ◽  
Vol 594 ◽  
pp. 96-103
Author(s):  
Hsiao Yeh Chu ◽  
Ming Hang Weng ◽  
Ru Yuan Yang ◽  
Chien Wei Huang ◽  
Chien Cheng Liu
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Uniform Size ◽  
Average Grain Size ◽  
Current Characteristics ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization ◽  
Polycrystalline Silicon Film

In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ramp-up time, 1,5,10,20 hours, are tested. The results show the maximum average grain size obtained in this paper is about 60 μm under the condition of 20-hour annealing ramp-up time. The nano-AIC specimens show a much better leakage current characteristics than the AIC specimens since the Al layer in AIC process is much thicker and was not removed completely from the polycrystalline silicon film during Al wet selective etching process.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Al-Induced Crystallization of Amorphous Silicon Film

2012 ◽  
Vol 271-272 ◽  
pp. 292-296
Author(s):  
Ping Sheng Zhou ◽  
Wei Min Shi ◽  
Jing Jin ◽  
Jun Qian ◽  
Xiao Lei Qu ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Amorphous Silicon Film ◽  
Average Grain Size ◽  
Different Temperatures ◽  
Magnetic Sputtering ◽  
Residual Al ◽  
Induced Crystallization

Al-induced crystallization (AIC) method was used for obtaining polycrystalline silicon (poly-Si) film on glass substrate. The films with glass/a-Si:H/Al structure were fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and magnetic sputtering. Then the samples were sent to perform annealing treatments during the different temperatures and time. The experimental results demonstrate that a highly crystallized poly-Si sample can be achieved by annealing at 480°C for 2h. The crystalline fraction (Xc) of the sample is about 99.1% and the Full Width at Half Maximum (FWHM) is 4.89cm-1. The average grain size of this sample is about 250nm. The energy dispersive spectroscopy (EDS) measurement confirms that the residual Al in the film is very little.

Piezoresistive and Mechanics Properties of Nanopolycrystalline Silicon Film Materials

2013 ◽  
Vol 380-384 ◽  
pp. 4237-4240 ◽  
Author(s):  
Xue Bin Lu ◽  
Lin Hai Cui ◽  
Hai Huang
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Test System ◽  
Suitable Material ◽  
Pressure Chemical ◽  
Polycrystalline Silicon Films ◽  
Different Thickness ◽  
Polycrystalline Silicon Film

The polycrystalline silicon films with same doping concentration and different thickness were prepared by low pressure chemical vapor deposition. The gauge factors of the films samples were tested, the results show that the piezoresistive properties of nanopolycrystalline silicon film (NPSF) exceed that of common polycrystalline silicon film (CPSF). To apply the NPSF to MEMS piezoresistive device effectively, the Youngs modulus of the NPSF were tested by in-situ nanomechanical test system, the results show that the Youngs modulus of the NPSF is about between 155GPa and 158GPa. It is very useful to investigate the piezoresistive and mechanics properties of NPSF, the results show that NPSF is a suitable material in MEMS piezoresistive device.

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