Studying Polyamide Water Separation Film Using Slow Positron Beam

2008 ◽  
Vol 607 ◽  
pp. 67-69
Author(s):  
Ren Wu Zhang ◽  
Patrick Bell ◽  
Justin R. Proirie ◽  
Paul M. Johnson ◽  
Lindsay A. Everhart ◽  
...  
Keyword(s):  
Free Volume ◽  
Interfacial Polymerization ◽  
Positron Beam ◽  
Hole Size ◽  
Water Separation ◽  
Slow Positron ◽  
Depth Profiles ◽  
Substrate Layer ◽  
Beam Depth ◽  
Free Volume Hole

Different polyamide water separation films were prepared by interfacial polymerization by using different concentrations of Ethylenediamine (EDA)/H2O and some Trimesoylchloride (TMC)/Toluene on the modified Polyacronitrile (mPAN) substrates. By applying a slow positron beam, depth profiles of relative free volume hole sizes for different films were obtained. It was found that the hole size at the skin polyamide layer was almost identical and much smaller than that in the mPAN substrate layer. The results indicate that the thickness of the polyamide layer is the major factor in controlling the performance of a membrane during water separation.

Free volume distribution at the Teflon AF®/silicon interfaces probed by a slow positron beam

Polymer ◽  
2011 ◽  
Vol 52 (2) ◽  
pp. 505-509 ◽  
Author(s):  
Stephan Harms ◽  
Klaus Rätzke ◽  
Vladimir Zaporojtchenko ◽  
Franz Faupel ◽  
Werner Egger ◽  
...  
Keyword(s):  
Free Volume ◽  
Positron Beam ◽  
Volume Distribution ◽  
Slow Positron ◽  
Teflon Af

scholarly journals Study of Microvoids in High-Rate a-Si:H Using Positron Annihilation

1997 ◽  
Vol 467 ◽  
Author(s):  
X. Zou ◽  
D. P. Webb ◽  
S. H. Lin ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Surface Region ◽  
Positron Beam ◽  
High Rate ◽  
Doppler Broadening ◽  
Slow Positron ◽  
Depth Profiles ◽  
Vacancy Type Defect ◽  
Low Rate

ABSTRACTIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si:H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.

Effect of crystallization and of water uptake on the free-volume hole size in polyamides 6 and 66

1998 ◽  
Vol 10 (46) ◽  
pp. 10443-10450 ◽  
Author(s):  
G Dlubek ◽  
M Stolp ◽  
Ch Nagel ◽  
H M Fretwell ◽  
M A Alam ◽  
...  
Keyword(s):  
Free Volume ◽  
Water Uptake ◽  
Hole Size ◽  
Free Volume Hole

scholarly journals Structure dependence of gamma ray irradiation effects on polyurethane and epoxy resin studied by PAL technique

2019 ◽  
Vol 13 (27) ◽  
pp. 157-163
Author(s):  
Hayder S. Hussain
Keyword(s):  
Free Volume ◽  
Gamma Ray ◽  
Cross Linking ◽  
Hole Size ◽  
Irradiation Effects ◽  
Fractional Free Volume ◽  
Structure Dependence ◽  
Positron Annihilation Lifetime ◽  
Gamma Ray Irradiation ◽  
Free Volume Hole

Positron annihilation lifetime (PAL) technique has been employed tostudy the microstructural changes of polyurethane (PU), EUXIT 101and epoxy risen (EP), EUXIT 60 by Gamma-ray irradiation with thedose range (95.76 - 957.6) kGy. The size of the free volume hole andtheir fraction in PU and EP were determined from ortho-positroniumlifetime component and its intensity in the measured lifetime spectra.The results show that the irradiation causes significant changes in thefree volume hole size (Vh) and the fractional free volume (Fh), andthereby the microstructure of PU and EP. The results indicate thatthe γ-dose increases the crystallinity in the amorphous regions of PUand increase the cross-linking of EP.

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