High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 115-118 ◽  
Author(s):  
Jawad ul Hassan ◽  
Peder Bergman ◽  
Anne Henry ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Surface Morphology ◽  
High Growth ◽  
Lower Surface ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Homoepitaxial Growth ◽  
Order Of Magnitude ◽  
Reduced Surface

The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

scholarly journals Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 95-98 ◽  
Author(s):  
Anne Henry ◽  
Stefano Leone ◽  
Sven Andersson ◽  
Olof Kordina ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Systematic Study ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Gas Mixture ◽  
Process Pressure ◽  
Order Of Magnitude ◽  
Standard Gas

A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8° off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (σ/mean) over a 2” diameter wafer.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 354
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 63-66 ◽  
Author(s):  
Guoli L. Sun ◽  
Irina G. Galben-Sandulache ◽  
Thierry Ouisse ◽  
Jean Marc Dedulle ◽  
Michel Pons ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Seeded Growth ◽  
Grown Layer ◽  
Continuous Feed ◽  
Transport Technique

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

2004 ◽  
Vol 815 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
S. Izumi ◽  
T. Tawara ◽  
T. Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Defect Density ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Effective Lifetime ◽  
Growth Technique ◽  
Homoepitaxial Growth

AbstractGrowth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

2007 ◽  
Vol 556-557 ◽  
pp. 129-132 ◽  
Author(s):  
T. Hori ◽  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Growth Rate ◽  
Dislocation Density ◽  
Basal Plane ◽  
Free Exciton ◽  
High Growth ◽  
High Growth Rate ◽  
Photoluminescence Spectra ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Ratio Range

Fast homoepitaxial growth of 4H-SiC has been carried out on off-axis (0001) substrates by horizontal hot-wall CVD at 1600οC. High growth rate up to 24 μm/h has been achieved with mirror-like surface in the C/Si ratio range of 1.0-2.0. The Z1/2 and EH6/7 concentrations can be kept as low as 7 × 1011 cm-3 and 3 × 1011 cm-3, although an unknown trap (UT1) is observed with the concentration in the 1011 cm-3 range. The photoluminescence spectra are dominated by strong free exciton peaks, and the L1 peak is not observed. The basal-plane dislocation (BPD) density has decreased with increase in growth rate, and it can be reduced to 22 cm-2 when epilayers are grown on Chemical Mechanically Polished (CMP) substrates at a growth rate of 24 μm/h.

Limitation of Selective Epitaxial Growth Conditions in Gas Source MBE Using Si2H6

1990 ◽  
Vol 204 ◽  
Author(s):  
Junro Sakai ◽  
Ken-Ichi Aketagawa ◽  
Toru Tatsumi
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Native Oxide ◽  
Initial Growth ◽  
Selective Epitaxial Growth ◽  
Gas Source ◽  
Gas Source Mbe

ABSTRACTLow temperature and high growth rate selective epitaxial growth (SEG) on Si02 patterned Si (001) substrate in gas-source molecular-beam epitaxy (GS-MBE) using pure Si2H6 has been investigated by RHEED observation. In the temperature range of 550 to 850°C, SEG was completely obtained at an initial growth stage. Limiting conditions of SEG were closely related with critical volume of supply gas that was equal to the total amount molecules supplied on SiO2 surface during the incubation period of initial growth. The surface SiO2 was induced to evaporate with Si2H6 supplied above 800°C, so that thermal cleaning temperature for removing native oxide came down to 800°C. As a result, the maximum process temperature of Si SEG now became 800°C, and its growth rate reached as high as 645A/min at growth temperature of 700°C.

Large Red Shift of PL Peak Energy in High Growth Rate a-Si:H Prepared by Hot-Wire CVD

2001 ◽  
Vol 664 ◽  
Author(s):  
Daxing Han ◽  
Guozhen Yue ◽  
Jennifer Weinberg-Wolf ◽  
Jessica M. Owens ◽  
Yueqin Xu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electronic States ◽  
High Growth ◽  
High Growth Rate ◽  
Red Shift ◽  
Hot Wire ◽  
Nano Scale ◽  
Peak Energy ◽  
Order Of Magnitude ◽  
Standard Rate

ABSTRACTWe characterized the electronic states and microstructure of high-growth-rate a-Si:H films by employing photoluminescence (PL) and Raman spectroscopies. The growth rate was from 50 to 115 Å/s compared to the standard rate of less than 10 Å/s. For the high-growth-rate a-Si:H films, we observed typical a-Si:H features in Raman but new features in PL. The new PL features are: a) the PL peak energy is as low as ∼1.15 eV compared to the standard ∼1.4 eV at 80 K; and b) the total intensity is more than one order of magnitude higher then the standard. We suggest that the nano-scale microstructure may be responsible for the anomalous PL features.

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