1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
2010 ◽
Vol 645-648
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pp. 987-990
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Keyword(s):
Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The DIMOSFETs were characterized from room temperature to 250°C. At room temperature, they showed a specific on-resistance of 4.9 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The specific on-resistance taken at a drain current (Id) of 260 A/cm2 was 5.0 mΩcm2. The blocking voltage of this device was higher than 1360 V at room temperature. At 250°C, the specific on-resistance increased from 5.0 mΩcm2 to 12.5 mΩcm2 and the threshold voltage determined at Id = 26 mA/cm2 decreased from 5.5 V to 4.3 V.
2014 ◽
Vol 778-780
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pp. 935-938
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2011 ◽
Vol 679-680
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pp. 607-612
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2017 ◽
Vol 16
(1)
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pp. 69-74
2013 ◽
Vol 28
(4)
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pp. 415-421
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2006 ◽
pp. 1011-1014
Keyword(s):
2016 ◽
Vol 858
◽
pp. 860-863
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Keyword(s):