Technology of Ultrasonic and Pulse Electrodeposition for ZnSe Thin Films

2010 ◽  
Vol 663-665 ◽  
pp. 1234-1237 ◽  
Author(s):  
Cheng Guang Zhang ◽  
Kong Zhao Li ◽  
Juan Miao
Keyword(s):  
Thin Films ◽  
Sodium Citrate ◽  
Acidic Solution ◽  
Dispersion Analysis ◽  
Pulse Electrodeposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solution Interface ◽  
Action Model ◽  
Znse Thin Films

The ZnSe thin films are co-deposited in the ZnSO4, Na2SeO3 and sodium citrate acidic solution, and the mechanism of the ultrasonic and pulse electrodeposition for ZnSe films is explained by the electrode-solution interface action model. Ultrasonic increases the activation energy of the [ZnCit]- and HSeO3 - and improves flow field of the solution between electrode and solution interface. The pulse current promotes the diffusion of solution and advantageously realizes the co-deposition of ZnSe films. The ZnSe thin films are pulse electrodeposited in zinc sulfate, selenite sodium and sodium citrate acidic solution with the action of ultrasonic. Finally, the ZnSe films have been characterized by the scanning electron microscope (SEM), the energy dispersion analysis of X-ray (EDAX) and X-ray diffraction (XRD).

Research on Sodium Citrate for Pulse Electrodeposition ZnSe Thin Films

2010 ◽  
Vol 150-151 ◽  
pp. 1772-1776 ◽  
Author(s):  
Cheng Guang Zhang ◽  
Xue Ling Yang ◽  
Juan Miao
Keyword(s):  
Thin Films ◽  
Sodium Citrate ◽  
Acidic Solution ◽  
Dispersion Analysis ◽  
X Ray ◽  
Solution Interface ◽  
Complex Agent ◽  
Action Model ◽  
Znse Thin Films

The principle, of which the ZnSe thin films are co-deposited in the ZnSO4 and Na2SeO3 acidic solution by electrochemistry, is explained by the electrode-solution interface action model. The current density and the duty cycle of the pulse current promote the diffusion of solution and affect the co-deposition of the ZnSe films. The ZnSe thin films are pulse electrodeposited in zinc sulfate, selenite sodium and sodium citrate acidic solution. The sodium citrate, which is one kind of complex agent, simultaneous also one kind of buffer agent and has certain buffer action, would affect the quality of the ZnSe films. Finally, the ZnSe films have been characterized by the scanning electron microscope (SEM) and the energy dispersion analysis of X-ray (EDAX).

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

Quantum Size Effects of Chemical Bath Deposited ZnSe Thin Films

2013 ◽  
Vol 652-654 ◽  
pp. 1743-1746
Author(s):  
Liang Yan Chen ◽  
Chao Fang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Absorption Spectrum ◽  
Size Effects ◽  
Optical Band Gap ◽  
Quantum Size Effects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Size ◽  
Znse Thin Films

Quantum dots ZnSe have been deposited through chemical bath deposition in thin films form. The nanoscal grain size of as-deposited and thermal treated ZnSe films have been investigated by X ray Diffraction. And optical band gap of those samples have been obtained from absorption spectrum. Both as-deposited and annealed films were with nanocryatlline grain smaller than the Bohr excitonic radius and showed blue shifts of bandgap in quantum size effects. The blue shifted optical bandgap versus grain size has been modeled theoretically.

Properties of ZnS Thin Films Prepared by CBD under Different Concentration of Complexing Agent

2012 ◽  
Vol 472-475 ◽  
pp. 1572-1576 ◽  
Author(s):  
Jie Liao ◽  
Hai Fang Zhou ◽  
Shu Ying Cheng
Keyword(s):  
Thin Films ◽  
Zinc Sulfate ◽  
Sodium Citrate ◽  
Energy Gap ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Buffer Solution ◽  
X Ray ◽  
Glass Substrates ◽  
Scanning Electron

ZnS thin films were deposited on glass substrates using chemical bath deposition. The zinc sulfate and thiourea were used as precursors along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride (pH=10.5) buffer solution. The ratio of Zn and complexing agent was changed from 6:1 to 1:1 by varying concentrations of the complexing agent. X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-vis spectrophotometer were used to investigate the structure, micrograph and optical characteristics of the ZnS thin films respectively. The concentration of sodium citrate has an effect on the crystalline size and crystallization. For the as-deposited thin films, the values of transmittances and Eg are about 85% and 3.8 eV respectively. However, they are decreased to 75% and 3.4 eV respectively after annealing. In addition, the concentration of the complexing agent has no remarkable influence on both the transmittance and the energy gap. The results show that the ZnS thin films with resistivity of 4.34×104 Ωcm are suitable for optoelectronic applications.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1−x)O3 thin films

2006 ◽  
Vol 88 (25) ◽  
pp. 252901 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Vilho Lantto ◽  
Johannes Frantti ◽  
Jussi Hiltunen
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Effects
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