Investigation of Optical Properties of ZnO Films Deposited by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 215-218
Author(s):  
Shuang Li ◽  
Feng Xiang Wang ◽  
Gang Fu ◽  
Yan Ju Ji ◽  
Jun Qing Zhao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sputtering Pressure

ZnO thin films with a strong c-axis orientation have been successfully deposited on quartz glass substrates at room temperature by radio frequency (rf) magnetron sputtering technology. X-ray diffraction, Rutherford backscattering, and prism coupling method were used to investigate the structure and optical properties of ZnO thin films. X-ray diffraction results shown lower sputtering pressure is propitious to increasing the crystallinity, and enhancing the c-axis orientation of the films. Rutherford backscattering analysis revealed that the films were stoichiometric ZnO, and as the sputtering pressure decreasing, the deposition rate were increased from 0.758 3nm/min to 2.892 nm min for sputtering pressure in the range from 1.0Pa to 0.5Pa. Under the lower sputtering pressure (0.5Pa) condition, the results obtained by prism coupling method investigation confirmed that the effective refractive index of ZnO films (no=1.8456，ne=1.8276) at a wavelength of 633nm is more close to Crystal Refractive index.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

Structural and Optical Properties of ZnO Film Precursors for Multilayered Transparent Solar Cell Electrodes

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Deposition Power ◽  
Different Temperatures

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.

Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

2005 ◽  
Vol 475-479 ◽  
pp. 1825-1828
Author(s):  
Ju Hyun Myung ◽  
Nam Ho Kim ◽  
Hyoun Woo Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Sputter Deposited

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

2011 ◽  
Vol 399-401 ◽  
pp. 926-929
Author(s):  
Wei Zhang ◽  
Mei Ling Yuan ◽  
Xian Yang Wang ◽  
Jun Ouyang
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Ferroelectric Films ◽  
Axis Orientation ◽  
X Ray ◽  
Pure Argon ◽  
Single Target ◽  
Conductive Oxide

BaTiO3(BTO) thin films were grown on (100) SrTiO3(STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O2(20% O2) atmosphere. A La0.5Sr0.5CoO3(LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm2and 27.1 μC/cm2, for the BTO films grown in pure argon and in mixed Ar/O2atmosphere, respectively.

Internal Stress of ZnO thin Films Caused by Thickness Distribution and Crystallinity

1998 ◽  
Vol 518 ◽  
Author(s):  
M. Takeuchi ◽  
K. Inoue ◽  
Y. Yoshino ◽  
K. Ohwada
Keyword(s):  
Thin Films ◽  
Stress Distribution ◽  
Thickness Distribution ◽  
Zno Thin Films ◽  
Optimum Thickness ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Argon Ions ◽  
Cosine Law

AbstractThe improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ± 2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.

Effect of Deposition Time on Structural and Optical Properties of ZnO Thin Films Deposited by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 81-87 ◽  
Author(s):  
Farid Khediri ◽  
Abdelkader Hafdallah ◽  
Mouna Bouhelal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Time ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray

In this work Zinc oxide thin films prepared by spray pyrolysis technique. A set of ZnO thin films were deposited with various deposition times, on glass substrate at 350 °C. The precursor solution is formed with zinc acetate in distilled methanol with 0.1 molarity. The deposition time was ranged from 2 to 8 min. The structural and optical properties of those films were examined by X-ray diffraction (XRD) and ultraviolet-visible spectrometer (UV). X-ray diffraction patterns of the ZnO thin films showed polycrystalline hexagonal wurtzite structure and the preferred orientation was along (002) plane when the grain size varied between 9.66 and 16.67nm. ZnO thin films were highly transparent in the visible with the maximum transmittance of 85% and the optical band gap was found between 3.25 and 3.28 eV.

The Structural Characterization and Optical Properties of Zinc Oxide Films Synthesized by Electrochemistry Method

2013 ◽  
Vol 743-744 ◽  
pp. 926-931
Author(s):  
Jing Xia Zheng ◽  
Xing Guo Zhao ◽  
Wei Liang ◽  
Jin Bo Xue
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrolyte Concentration ◽  
Hexagonal Wurtzite Structure ◽  
Zinc Nitrate ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
The Matrix

Flaky ZnO thin films were electrodeposited from an aqueous solution of zinc nitrate (Zn (NO3)2) as electrolyte on ITO glass substrate by cathodic reduction method The effect of electrolyte concentration on the structure, morphology and optical properties of ZnO thin films were studied by X-ray diffraction, scanning electron microscopy and UV-Vis spectrometer. The results show that the ZnO films are of hexagonal wurtzite structure; When the concentration of Zn (NO3)2 solution is 0.24 M, the sparse flaky ZnO thin films were prepared and the thickness and length of ZnO flaky are about 50 nm and 1~3 μm, respectively; When the electrolyte concentration is 0.16 M, hexagonal and triangular structures are observed and some lathy and conical ZnO structure start to appear; When the concentration of Zn (NO3)2 solution drops to 0.08 M, the matrix of films is still flaky ZnO, but porous structures among the flaky structures appear and the size of conical ZnO has changed, whose bottom diameter reaches 1~3 μm and length is 2~4 μm; UV-Vis absorption test results indicate the absorption peak and the bandgap of the prepared ZnO thin films are about 350 nm and 3.28 eV, respectively.

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