Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 758-761 ◽  
Author(s):  
Luigia Lanni ◽  
Reza Ghandi ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Bengt Gunnar Malm ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
High Voltage ◽  
Current Gain ◽  
A Current

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

A Case for High Temperature, High Voltage SiC Bipolar Devices

2007 ◽  
Vol 556-557 ◽  
pp. 687-692 ◽  
Author(s):  
Anant K. Agarwal
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Low Voltage ◽  
Schottky Diodes ◽  
Life Time ◽  
Extreme Environment ◽  
Junction Temperature ◽  
Current Gain ◽  
Pin Diodes ◽  
Bipolar Devices

The last three years have seen a rapid growth of 600 V and 1200 V SiC Schottky diodes primarily in the Power Factor Correction (PFC) circuits. The next logical step is introduction of a SiC MOSFET to not only further improve the power density and efficiency of the PFC circuits but also to enable the entry of all SiC power modules in Pulse Width Modulated (PWM) based power converters such as motor control in 600-1200 V range. The combination of SiC MOSFET and Schottky diodes will offer 60-80% lower losses in most low voltage applications at normal operating temperatures (< 200°C) where no significant improvements in packaging are required. This will cover most commercial applications with the exception of those having to function under extreme environment (>200°C) such as applications in automotive, aerospace and oil/gas exploration. For these high temperature applications, a case can be made for 600 - 2000 V Bipolar Junction Transistors (BJTs) and PiN diodes provided we do our homework on high temperature packaging. A number of interesting device related problems persist in bipolar devices such as forward voltage increase in PiN diodes and current gain degradation in BJTs. For very high voltage (>10 kV) applications such as those found in utilities (Transmission and Distribution), Large Drives and Traction, a case can be made for >10 kV PiN diodes, IGBTs, Thyristors and GTOs. While IGBTs will be restricted to <200°C junction temperature, the PiN diodes, Thyristors and GTOs may be operated at >250°C junction temperature provided that the high temperature, high voltage packaging issues are also addressed. Significant progress has been made in the development of the p-channel IGBTs and GTOs. The main issues seem to be the VF degradation due to stacking fault formation and improvement of minority carrier life-time.

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications

2013 ◽  
Vol 740-742 ◽  
pp. 966-969 ◽  
Author(s):  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Low Voltage ◽  
Current Gain ◽  
A Current

4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

2017 ◽  
Vol 897 ◽  
pp. 669-672 ◽  
Author(s):  
Shinichiro Kuroki ◽  
Tatsuya Kurose ◽  
Hirofumi Nagatsuma ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Leakage Current ◽  
High Voltage ◽  
Logic Gate ◽  
Harsh Environment ◽  
Test Elements ◽  
Voltage Swing

For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200°C. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 1091-1094 ◽  
Author(s):  
Y. Zhang ◽  
Kuang Sheng ◽  
Ming Su ◽  
Jian Hui Zhao ◽  
Petre Alexandrov ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
High Voltage ◽  
Threshold Voltage ◽  
Electron Mobility ◽  
Room Temperature ◽  
Low Voltage ◽  
Voltage Drop ◽  
Vertical Channel ◽  
Numerical Prediction

A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 oC characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 mΩ·cm2 and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observed when temperature varies from room temperature to 300 oC. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at VDS of 200 V and on-state current of 0.4 A.

An Environmental Wet Cell For High Voltage Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 18-19
Author(s):  
N.J. Tighe ◽  
H.M. Flower ◽  
P.R. Swann
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Image Quality ◽  
Inelastic Scattering ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Environmental Cell ◽  
Water Saturated ◽  
High Temperature Gas

A differentially pumped environmental cell has been developed for use in the AEI EM7 million volt microscope. In the initial version the column of gas traversed by the beam was 5.5mm. This permited inclusion of a tilting hot stage in the cell for investigating high temperature gas-specimen reactions. In order to examine specimens in the wet state it was found that a pressure of approximately 400 torr of water saturated helium was needed around the specimen to prevent dehydration. Inelastic scattering by the water resulted in a sharp loss of image quality. Therefore a modified cell with an ‘airgap’ of only 1.5mm has been constructed. The shorter electron path through the gas permits examination of specimens at the necessary pressure of moist helium; the specimen can still be tilted about the side entry rod axis by ±7°C to obtain stereopairs.

An Alternative to High-Temperature and Acid/Solvent-Based Methods for Removing Integrated Circuits from Ceramic or Other Problem Substrates

2005 ◽  
Author(s):  
Carl M. Nail
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Success Rate ◽  
Mechanical Damage ◽  
Test Equipment ◽  
High Success Rate ◽  
Automated Test Equipment ◽  
Removal Method ◽  
Automated Test ◽  
Conventional Methods

Abstract Dice must often be removed from their packages and reassembled into more suitable packages for them to be tested in automated test equipment (ATE). Removing bare dice from their substrates using conventional methods poses risks for chemical, thermal, and/or mechanical damage. A new removal method is offered using metallography-based and parallel polishing-based techniques to remove the substrate while exposing the die to minimized risk for damage. This method has been tested and found to have a high success rate once the techniques are learned.

GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000

1985 ◽  
Vol 21 (24) ◽  
pp. 1124 ◽  
Author(s):  
A. Cazarre ◽  
J. Tasselli ◽  
A. Marty ◽  
J.P. Bailbe ◽  
G. Rey
Keyword(s):  
Current Gain ◽  
A Current

Applications of CoSi2 to VLSI and ULSI

1993 ◽  
Vol 320 ◽  
Author(s):  
S. P. Murarka
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Electrical Contacts ◽  
High Conductivity ◽  
Low Resistivity ◽  
Polysilicon Films ◽  
Continued Use

ABSTRACTSilicides have found application as high conductivity, high temperature, and corrosion resistance materials that form good electrical contacts to silicon and good low resistivity cladding on polysilicon films used as gate metal. Of various silicides investigated in past CoSi2 offers several advantages including lowest resistivity, self-aligned formation, low lattice mismatch with silicon, stability in presence of dopants and on SiO2, Si3N4, or Sioxynitrides, and reliability to process temperatures ≤900°C even when used in thicknesses as thin as 50-60 nm. Thus, CoSi2 has found an application in VLSI and ULSI. In this paper, the properties, formation and processing, reliability, and applicability of CoSi2 will be reviewed. It will be shown that CoSi2 is only silicide that offers properties and reliability for continued use in sub-0.25 pm VLSI and ULSI integrated circuits.

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