Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
2012 ◽
Vol 717-720
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pp. 355-358
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Keyword(s):
X Ray
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Structures and propagating behaviors of threading dislocations (TDs) in PVT-grown 4H-SiC single crystals were both investigated using Synchrotron monochromatic X-ray topography. Comparative studies by examining images obtained for the crystals with different diffraction geometries of (0004) and (11-20) of 4H-SiC revealed that a large amount of TDs are likely to be mixed in character, i.e., dislocations with Burgers vector components of both <0004> and <11-20>. Closer observations of topography images has revealed that, although TDs lie largely along the c-axis direction, some of the TDs show quite a complex propagating behavior: not extending in a straight line but meandering along the growth direction.
2012 ◽
Vol 717-720
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pp. 343-346
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1979 ◽
Vol 12
(1)
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pp. 110-115
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