scholarly journals Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Structural Defects ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Radiation Induced ◽  
Cubic Silicon Carbide ◽  
Effect Method

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

Effect of 3C-SiC Irradiation with 8 MeV Protons

2017 ◽  
Vol 897 ◽  
pp. 311-314 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Boris Ya. Ber ◽  
Gagik A. Oganesyan ◽  
Sergey V. Belov ◽  
Natalia. V. Seredova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Initial Concentration ◽  
A Value ◽  
Full Compensation ◽  
Mev Protons

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

2011 ◽  
Vol 45 (2) ◽  
pp. 141-144 ◽  
Author(s):  
A. M. Ivanov ◽  
V. V. Kozlovski ◽  
N. B. Strokan ◽  
A. A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Energy Distribution ◽  
Proton Irradiation ◽  
Radiation Defects ◽  
Recoil Atoms

scholarly journals Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4976
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Klavdia S. Davydovskaya ◽  
Mikhail E. Levinshtein
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Radiation Hardness ◽  
Main Mechanism ◽  
Deep Acceptor ◽  
High Temperature Electronics ◽  
Temperature Electron

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.

Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC

2020 ◽  
Vol 1004 ◽  
pp. 278-283
Author(s):  
Lev V. Shakhov ◽  
Alexander A. Lebedev ◽  
Natalia. V. Seredova ◽  
Sergey P. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Structural Perfection ◽  
Twin Boundaries ◽  
Pl Spectra ◽  
Donor Acceptor

The photoluminescence spectra were studied in 3C-SiC / 4H-SiC heterostructures and single crystals of 3C-SiC. It was shown that 3C-SiC epitaxial layers grown on 4H-SiC substrates have significantly less structural perfection than 3C-SiC single crystals. It was found that doping with aluminum leads to the appearance of characteristic photoluminescence (PL) both in the epitaxial layers and in 3C-SiC single crystals. At the same time, the irradiation of the epitaxial layers does not lead to the appearance of “defective PL (DFL), as is observed for single crystals. It was suggested that the twin boundaries existing in 3C-SiC epitaxial layers could serve as getters of radiation defects that are components of donor – acceptor pairs (DAP) responsible for DFL.

scholarly journals Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC

2019 ◽  
Vol 963 ◽  
pp. 301-304
Author(s):  
Abdul Al Atem ◽  
Victor Bratus ◽  
Bruno Canut ◽  
Jeremie Lefevre ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Epr Spectroscopy ◽  
Proton Irradiation ◽  
Paramagnetic Resonance ◽  
Photoluminescence Study ◽  
Infra Red ◽  
Cubic Silicon Carbide ◽  
Electron Paramagnetic

Combined Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after electron and proton irradiation. We have studied the effects of the thermal annealing (500-1000°C) on the PL intensity in the visible and the near infra-red (NIR) ranges and identified the point defects formation after these two processes of irradiation.

Effect of Powder-Mixed Dielectric on EDM Process Performance

2020 ◽  
Vol 38 (8A) ◽  
pp. 1226-1235
Author(s):  
Safa R. Fadhil ◽  
Shukry. H. Aghdeab
Keyword(s):  
Silicon Carbide ◽  
High Speed ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
High Speed Steel ◽  
Transformer Oil ◽  
Dielectric Fluid ◽  
Peak Current ◽  
Powder Concentration ◽  
Pulse On Time

Electrical Discharge Machining (EDM) is extensively used to manufacture different conductive materials, including difficult to machine materials with intricate profiles. Powder Mixed Electro-Discharge Machining (PMEDM) is a modern innovation in promoting the capabilities of conventional EDM. In this process, suitable materials in fine powder form are mixed in the dielectric fluid. An equal percentage of graphite and silicon carbide powders have been mixed together with the transformer oil and used as the dielectric media in this work. The aim of this study is to investigate the effect of some process parameters such as peak current, pulse-on time, and powder concentration of machining High-speed steel (HSS)/(M2) on the material removal rate (MRR), tool wear rate (TWR) and the surface roughness (Ra). Experiments have been designed and analyzed using Response Surface Methodology (RSM) approach by adopting a face-centered central composite design (FCCD). It is found that added graphite-silicon carbide mixing powder to the dielectric fluid enhanced the MRR and Ra as well as reduced the TWR at various conditions. Maximum MRR was (0.492 g/min) obtained at a peak current of (24 A), pulse on (100 µs), and powder concentration (10 g/l), minimum TWR was (0.00126 g/min) at (10 A, 100 µs, and 10 g/l), and better Ra was (3.51 µm) at (10 A, 50 µs, and 10 g/l).

Sign in / Sign up

Export Citation Format

Share Document