Lateral Boron Distribution in Polycrystalline SiC Source Materials

2013 ◽  
Vol 740-742 ◽  
pp. 397-400 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Michl Kaiser ◽  
Rickard Liljedahl ◽  
Valdas Jokubavicius ◽  
Yi Yu Ou ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Vapor Transport ◽  
White Leds ◽  
Depth Profiles ◽  
Boron Distribution ◽  
Secondary Ion ◽  
Source Materials ◽  
Co Doped

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 625-628
Author(s):  
Hun Jae Chung ◽  
Sung Wook Huh ◽  
A.Y. Polyakov ◽  
Saurav Nigam ◽  
Qiang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Bulk Crystals ◽  
Hall Effect Measurements ◽  
Site Competition ◽  
Secondary Ion

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 1053 and 1010 4cm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Новый подход к анализу фазового состава углеродсодержащих материалов методом времяпролетной вторично-ионной масс-спектрометрии

2019 ◽  
Vol 45 (2) ◽  
pp. 50
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.И. Охапкин ◽  
С.А. Краев ◽  
М.А. Лобаев
Keyword(s):  
Mass Spectra ◽  
Secondary Ion Mass Spectrometry ◽  
Simple Algorithm ◽  
Cluster Ions ◽  
Two Phase ◽  
Depth Profiles ◽  
Secondary Cluster ◽  
Phase Systems ◽  
Secondary Ion

AbstractNew possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are considered. Differences are established between the mass spectra of three carbon phases: diamond, diamond-like carbon (DLC), and graphite. A simple algorithm for the quantitative determination of different phases in two-phase systems diamond–graphite and DLC–graphite is proposed that is based on the measurement of relative intensities of secondary cluster ions such as C_8/C_5 and CsC_8/CsC_4. It is shown that nonuniform depth profiles of various carbon phases are formed in diamond structures upon laser cutting and in DLC structures upon thermal annealing.

Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

2010 ◽  
Vol 82 (19) ◽  
pp. 8291-8299 ◽  
Author(s):  
Alan M. Piwowar ◽  
John S. Fletcher ◽  
Jeanette Kordys ◽  
Nicholas P. Lockyer ◽  
Nicholas Winograd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Analysis ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Structural and Electrical Properties of Tin and Carbon Co-Implanted Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
P. Mei ◽  
M. T. Schmidt ◽  
P. W. Li ◽  
E. S. Yang ◽  
B. J. Wilkens
Keyword(s):  
Electrical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Alloy System ◽  
Group Iv ◽  
Carbon Ions ◽  
Depth Profiles ◽  
Structural And Electrical Properties ◽  
Group Iv Semiconductor ◽  
Work Samples ◽  
Secondary Ion

AbstractThe alloy system Six(SnyC1-y)1-x was investigated. In this work, samples were prepared by co-implantation of tin and carbon ions into silicon wafers with dosage range 1015 − 1016cm−2, followed by rapid thermal annealing. Rutherford backscattering channeling, Auger sputter profiling, and secondary ion mass spectrometry were employed to study the crystallinity, chemical composition and depth profiles. A near perfect crystallinity for 0.5% at. of tin and carbon was achieved. To study the electrical properties in the implanted materials, diode I-V measurements were performed. The data show near ideal p-n junctions in the co-implanted region. This work demonstrates promising features of group IV semiconductor synthesis by ion implantation.

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D218O Labelling

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. McCallum ◽  
T. W. Simpson ◽  
I. V. Mitchell ◽  
J. Rankin ◽  
L. A. Boatner
Keyword(s):  
Water Vapour ◽  
Rate Increase ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Nuclear Reaction Analysis ◽  
Doubly Labelled Water ◽  
Time Resolved ◽  
Depth Profiles ◽  
Conventional Furnace ◽  
Secondary Ion

ABSTRACTWe report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D218O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

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