Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods
2014 ◽
Vol 783-786
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pp. 1973-1978
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Good crystalline of ATO thin films is necessary to improve the electrical and optical properties. In this paper, ATO thin films were fabricated using PLD method at high temperature of 550 °C, and the effect of laser energy density on the microstructure, electrical property and optical property of the ATO films is discussed. The results suggest that ATO films show good crystalline when deposited at high temperature of 550 °C. Both the electrical and optical properties have been enhanced with the increasing of laser energy density. When the laser energy density is 5.4 J/cm2, the lowest resistivity of ATO thin film is obtained with the value of 6.52×10-4 Ω·cm and the average optical transmittances is 82.0 %.
2011 ◽
Vol 25
(20)
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pp. 2741-2749
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2021 ◽
Vol 21
(3)
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pp. 1971-1977
Combined effect of substrate temperature and laser energy density on laser ablated BiFeO3 thin films
2013 ◽
Vol 24
(10)
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pp. 3946-3951
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2021 ◽
Vol 32
(8)
◽
pp. 11107-11118
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