Influence of Substrate Temperature on the Al and Zr Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 814 ◽  
pp. 601-606 ◽  
Author(s):  
Fei Huan ◽  
Jin Feng Leng ◽  
Zhi Chao Meng ◽  
Bin Sun ◽  
Wen Shuang He
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Influence Of Substrate ◽  
Co Doped

ZnO doped Al2O3and ZrO2(ZAZO) thin films were deposited by the radio frequency magnetron sputtering on substrate temperature with 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-probe tester. The results showed that the substrate temperature obviously influenced the grain size of ZAZO films. The ZnO thin film had the largest crystallization orientation for the (002) peak and the smallest FWHM value at substrate temperature of 250°C. As the temperature increasing, the resistance of films gradually decreased till reaching a minimum at 250°C and then rised. Due to the increasing of Al and Zr concentrations into ZnO lattice, the Al ions created an abundance number of free electrons in the ZnO lattice, and in turn, the electrical conductivity increased. In addition, the improvement of film in the crystalline state results in the film resistivity decreases.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Influence of Substrate on Structure and Magnetic Properties of Bi0.9Nd0.1FeO3 Thin Films by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 302 ◽  
pp. 146-150
Author(s):  
L.L. Li ◽  
Qiu Xiang Liu ◽  
Yan Zou ◽  
Xin Gui Tang ◽  
Yan Ping Jiang
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Cross Section ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Influence Of Substrate

Bi0.9Nd0.1FeO3 (BNFO) films were deposited on Si (100) and (La,Sr)(Al,Ta)O3 (100) (LAST) substrate by radio frequency (RF) magnetron sputtering method respectively. The structure，morphology and magnetic properties were studied. X-ray diffraction (XRD) result indicates that the BNFO films on different substrate adopted different orientation. Cross-section scanning electron microscopy shows that the film thickness is 145 nm．Magnetic properties measurement shows that the film on Si(100) substrate has the larger saturation magnetization (Ms) of 3 686 emu/cm3, while the Ms value of the BNFO films on LSAT(100) substrate is only 1 213 emu/cm3.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

Compositional dependence of thin films of BiPbSrCaCuO on target to substrate distance

1995 ◽  
Vol 73 (1-2) ◽  
pp. 35-37
Author(s):  
J. Murdoch ◽  
F. S. Razavi ◽  
J. A. Moore
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Atomic Composition ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Distance ◽  
Radioisotope Source ◽  
Complex Variation

Using magnetron sputtering techniques, several thin films of superconducting BiPbSrCaCuO were fabricated by varying the distance between the substrate (single crystal of MgO with polished (100) plane) and the targets. During the deposition the gas pressure was kept constant at 0.3 mbar (1 mbar = 0.1 kPa) and the substrate temperature was kept at 700 °C. An energy-dispersive X-ray fluorescence was designed using a radioisotope source with a secondary target and a Si(Li) X-ray spectrometer and it was used to measure the atomic composition of the film quantitatively. It was found that the Ca concentration relative to Sr increases linearly as the distance between the substrate and the targets increases. However, both Cu and Bi show a more complex variation of concentration with distance. The X-ray diffraction results also indicated that the films are grown epitaxially along the C axis, which showed a semiconducting behaviour with TC,zero below 60 K.

Preparation of SnS thin films with gear-like sheet appearance by close-spaced vacuum thermal evaporation

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744054 ◽  
Author(s):  
Zhangpeng Shao ◽  
Chengwu Shi ◽  
Junjun Chen ◽  
Yanru Zhang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Near Infrared ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Influence Of Substrate ◽  
Sns Thin Films

SnS thin films with gear-like sheet appearance were successfully prepared by close-spaced vacuum thermal evaporation using SnS powders as a source. The influence of substrate temperature on the surface morphology, chemical composition, crystal structure and optical property of SnS thin films was investigated by scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction and ultraviolet–visible–near infrared spectroscopy. The results revealed that serration architecture appeared obviously in the edge of the SnS sheet and the strongest peak at 2[Formula: see text]=31.63[Formula: see text] was broadened and many shoulder peaks were observed with increasing substrate temperature. The atomic ratio of Sn to S increased from 1:1.08 to 1:1.20, the grain size became slightly smaller and the optical absorption edge had a blueshift in the SnS thin film with decreasing substrate temperature.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering

1997 ◽  
Vol 472 ◽  
Author(s):  
S.K. Kang ◽  
M.S. Park ◽  
D.B. Kim ◽  
K.S. No ◽  
S.H. Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Surface Characterization ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Axis Orientation ◽  
X Ray ◽  
Dominant Influence

ABSTRACTPLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

Study of the Capacitive Properties of Strontium Barium Niobate Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1306-1310
Author(s):  
Sheng Chien Su ◽  
Wen Chung Chang ◽  
Chia Ching Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Structure ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capacitive Properties ◽  
Capacitance Voltage

Ferroelectric SrxBa1−xNb2O6 (SBN) thin films are deposited on Al/Si (100) substrates by radio frequency magnetron sputtering at room temperature. The nanograin sizes of the SBN thin films were analized by scanning electron microscopy (SEM). X-ray diffraction reveals that all the SBN thin films show an amorphous structure because they were deposited at room temperature.The capacitive properties of the SBN thin films were measured using metal ferroelectric insulation semiconductor (MFIS) structures. The memory window of the MFIS structure was characterized with a capacitance-voltage (C-V) method.

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