Intense UV-Visible-IR Adjustable Photoluminescence from Silicon-rich Oxynitride Layers Prepared by Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 560 ◽  
Author(s):  
Zingway Pei ◽  
Y.J. Chung ◽  
H.L. Hsiao ◽  
H.L. Hwang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Clusters ◽  
Process Gas ◽  
Gas Flow Ratio ◽  
Uv Visible

ABSTRACTThe intense UV-visible-IR adjustable light emissions from silicon-rich oxynitride thin films without any thermal annealing were observed at room temperature under a 325 nm He-Cd laser excitation. The silicon-rich oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) with the mixture of 5% Ar diluted silane and nitrous oxide gases. The strong naked-eye recognizable photoluminescence (blue-white-red) could be adjusted by changing the process gas flow ratio τ =([SiH4]/[N20]). To the best of our knowledge, intense and adjustable UV-blue light emissions in the as-deposited thin films are first reported in this work. The Fourier Transform infrared (FTIR) spectroscopy was applied to investigate the microstructure-bonding configurations, in which silicon polysilane related bonding at 830-890 cm' present that silicon complex, exists along with the Si-O-Si bonding. X-ray photoelectron spectroscopy was used to investigate the binding configuration, the binding energy of Si 2p appearing at 99.3 eV was indicative of formation of the silicon clusters. As a consequence, we suppose that the visible-IR lights emissions might possible be strongly related to silicon clusters formation in the films and the intense UV emissions might come from the oxygen-related defects.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

2010 ◽  
Vol 3 (1) ◽  
Author(s):  
Rachel Walker ◽  
M. Singh ◽  
Y. Yang ◽  
C.G. Takoudis
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Nickel Ferrite ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Oxygen Gas ◽  
The Individual

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.

RuO2 films by metal-organic chemical vapor deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2644-2648 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Film Structure ◽  
Organic Chemical ◽  
Dilute Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Pure and conducting RuO2 thin films were successfully deposited on Si, SiO2/Si, and quartz substrates at temperatures as low as 550 °C by a hot wall metal-organic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium, Ru(C5H5)2, was used as the precursor. An optimized MOCVD process for conducting RuO2 thin films was established. Film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO2, pure Ru, or a RuO2 + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO2 films were specular, crack-free, and well adhered on the substrates. The Auger electron spectroscopy depth profile showed good composition uniformity across the bulk of the films. The MOCVD RuO2 thin films exhibited a resistivity as low as 60 μω-cm. In addition, the reflectance of RuO2 in the NIR region had a metallic character.

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

2011 ◽  
Vol 1313 ◽  
Author(s):  
Lamartine Meda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Ionic Conductivity ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrochemical Impedance ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

2006 ◽  
Vol 510-511 ◽  
pp. 962-965
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho ◽  
Y.J. Kim ◽  
Chin Myung Whang ◽  
Won Seung Cho ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Nanocrystallites ◽  
Deposition Conditions

The nanostructural and optical features of hydrogenated nanocrystalline silicon (nc-Si:H) thin films, which were prepared by plasma enhanced chemical vapor deposition (PECVD), were investigated as a function of deposition conditions. It was found that the crystallite size varied with the relative fraction of Si-H3 bonds in the films, [ ] eger n n n H Si H Si int 3 1 3 / ] [ = = ∑ − − , which was sensitively related with the flow rate of SiH4 reaction gas. The silicon nanocrystallites in the films enlarged from ~2.0 to ~8.0 nm in their size with increasing gas flow rate, while the PL emission energy varied from 2.5 to 1.8 eV; the relative fractions of the Si-H3, Si-H2, and Si-H bonds in the amorphous matrix were also varied sensitively with the SiH4 flow rate. A model for the nanostructure of the nc-Si:H films was suggested to discribe the variations in the size and chemical bonds of the nanocrystallites as well as the amorphous matrix depending on the deposition conditions.

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