150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 153-156 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Li Ping Lv ◽  
Wei Ning Qian ◽  
Yi Yang Li ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Growth Process ◽  
Doping Concentration ◽  
Layer Growth ◽  
The Other ◽  
Edge Exclusion

Homo-epitaxial growth of 4H-SiC on 4o off-axis 150 mm diameter substrates has been performed in a commercial warm-wall multi-wafer planetary reactor. Based on our well developed 100 mm 4H-SiC epitaxial growth process, which can achieve excellent thickness and doping uniformities (δ/mean) of <1% and <5%, respectively, the growth process and hardware were further fine-tuned and improved for 150 mm 4H-SiC homoepitaxy. After the improvement, the 6 to7 μm thick epilayer uniformity has reached 1.1% with a 5mm edge exclusion while the doping uniformity has improved to 16.5% (<10%) with an edge exclusion of 5 mm (10mm), respectively. Surface roughness of the as-grown 150 mm 4H-SiC epitaxial layer has an RMS value of 0.12 nm scanned by AFM on 20×20 μm2 areas. Homo-epitaxial growth on C-face 150 mm 4H-SiC substrates has also been carried out. Other than the doping concentration and uniformity, the other results are very close to the epi-growth on Si-face.

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

2008 ◽  
Vol 600-603 ◽  
pp. 127-130 ◽  
Author(s):  
Giuseppe Condorelli ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
L.M.S. Perdicaro ◽  
Giuseppe Abbondanza ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Layer Growth ◽  
Low Background ◽  
As Doping ◽  
Background Doping

A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run.

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor

2018 ◽  
Vol 924 ◽  
pp. 76-79
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Yi Yang Li ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Mass Production ◽  
Doping Concentration ◽  
Large Diameter ◽  
Layer Growth ◽  
Epitaxial Layers

In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

2014 ◽  
Vol 778-780 ◽  
pp. 163-166 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Zhe Yang Li ◽  
Li Ping Lv ◽  
Jin Yun Luo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Epitaxial Layer ◽  
Mass Production ◽  
Doping Level ◽  
Layer Growth ◽  
Average Thickness ◽  
Power Devices ◽  
Homoepitaxial Growth ◽  
One Step ◽  
Edge Exclusion

Homo-epitaxial growth of 50 μm-thick 4H-SiC on 4° off-axis 100 mm substrates have been demostrated by using a commercial warm-wall multi-wafer planetary reactor (Aixtron 2800 G4). With optimized process, epitaxial layer with an average thickness of 48.146 μm and doping level of 8.39×1014/cm3are obtained. The thickness uniformity with an edge exclusion of 5 mm are 1.30% (σ/mean) and 2.17% (max-min/max+min), and the doping level uniformity are 4.66% (σ/mean) and 6.95% (max-min/max+min), respectively. Surface roughness of the as-grown 50 μm-thick epitaxial layer has an RMS value of 0.606 nm with one step bunching on the 20×20 μm2areas. This initial effort on thick 4H-SiC homoepitaxial growth indicates that this comercial multi-wafer planetary reactor has the potential for mass production of SiC epiwafers for 5000 V and above power devices.

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

2016 ◽  
Vol 858 ◽  
pp. 197-200 ◽  
Author(s):  
Ruggero Anzalone ◽  
Marco Salanitri ◽  
Simona Lorenti ◽  
Alberto Campione ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Growth Process ◽  
Doping Concentration ◽  
Electronic Devices ◽  
Reaction Chamber ◽  
The Other ◽  
Hydrogen Flux ◽  
Capacitance Voltage ◽  
Ft Ir ◽  
Good Uniformity ◽  
Power Application

Doping incorporation and good uniformity along the wafer it is a mandatory for application in high voltage electronic devices. In this work the effect of the Hydrogen (H) flux position inside the reaction chamber on homo-epitaxial 4H-SiC growth process has been studied. Capacitance-Voltage and FT-IR analyses show as the different position of the gas injector affect the doping and thickness uniformity and profile. On the other hand, By Candela and AFM analyses no morphological or surface influence by Hydrogen flux position has been observed.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 219-222 ◽  
Author(s):  
Keiji Wada ◽  
Tsunenobu Kimoto ◽  
Kimito Nishikawa ◽  
Hiroyuki Matsunami
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Growth Conditions ◽  
The Other ◽  
Background Doping ◽  
Site Competition ◽  
Competition Behavior ◽  
Ratio Range

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 93-96 ◽  
Author(s):  
Hrishikesh Das ◽  
Swapna G. Sunkari ◽  
Timothy Oldham ◽  
Janna R. B. Casady ◽  
Jeff B. Casady
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Growth Process ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
High Uniformity ◽  
Highly Uniform ◽  
Reduced Surface

In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm).

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 165-168 ◽  
Author(s):  
Tobias Höchbauer ◽  
Mario Leitner ◽  
Ronny Kern ◽  
Matthias Künle
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Layer Thickness ◽  
Doping Concentration ◽  
Batch Reactor ◽  
Growth Processes ◽  
Background Doping ◽  
Very High

We present results on the homo-epitaxial growth on the Si face of 100 mm and 150 mm (0001)-oriented (4° off-orientation) 4H SiC wafers utilizing the horizontal hot-wall batch reactor Probus-SiCTM from Tokyo Electron Limited. Standard epitaxial growth processes show very high levels of intra-wafer, intra-run wafer-to-wafer, and run-to-run uniformities in the layer thickness as well as in the n-type doping concentration. N-type background doping levels less that 5e13 /cm3 have been reached. AFM measurements reveal a surface roughness of 0.2nm (rms). The density of epitaxy related defects such as triangular defects, carrots, and ingrown particles due to downfall are very low, as confirmed by high blocking yields.

MBE Grown Planar Doped Barrier Diodes

1999 ◽  
Vol 570 ◽  
Author(s):  
Vo Van Tuyen
Keyword(s):  
Epitaxial Growth ◽  
Potential Barrier ◽  
Doping Concentration ◽  
Layer Growth ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Current Limitation ◽  
Background Doping ◽  
P Type ◽  
Growth Technology

The realization of Planar Doped Barrier Diode (PDBD) presented in this paper starts out from the limits of the MBE layer growth technology. The limitations due to the background doping concentration and the diffusion of the n and p type dopants during the epitaxial growth are considered. The next parameter is the height of the potential barrier. The choice of this value depends on the requirements of the application. It must take into consideration the current transport mechanisms and the current limitation appearing at higher bias levels.

Sign in / Sign up

Export Citation Format

Share Document