Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs
2015 ◽
Vol 821-823
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pp. 709-712
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Keyword(s):
We study the impact of different nitric oxide (NO) post oxidation annealing (POA) procedures on the on resistance Ron of n-channel MOSFETs and on the threshold voltage shift ∆Vth following positive bias temperature stress (PBTS). All samples were annealed in an NO containing atmosphere at various temperatures and times. A positive stress voltage of 30 V was chosen which corresponds to an electric field of about 4.3 MV/cm. The NO POA causes a decrease in overall ∆Vth for longer NO POA times and higher NO POA temperatures. As opposed to the change in ∆Vth, the device Ron increases with NO POA temperature and time.
2016 ◽
Vol 858
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pp. 481-484
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2014 ◽
Vol 778-780
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pp. 903-906
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1998 ◽
Vol 45
(1)
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pp. 165-172
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2010 ◽
Vol 49
(4)
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pp. 04DC24
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Keyword(s):
2014 ◽
Vol 778-780
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pp. 959-962
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