scholarly journals Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

2015 ◽  
Vol 821-823 ◽  
pp. 814-817 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Dominique Tournier ◽  
Dominique Planson
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

2014 ◽  
Vol 778-780 ◽  
pp. 1122-1125 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Nicolas Thierry-Jebali ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
High Temperature ◽  
Cryogenic Temperature ◽  
Good Choice ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

Effect of High Temperature Ageing on Active and Passive Power Devices

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000228-000235
Author(s):  
Cyril Buttay ◽  
Remi Robutel ◽  
Christian Martin ◽  
Christophe Raynaud ◽  
Simeon Dampieni ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Magnetic Materials ◽  
Power Converter ◽  
Power Devices ◽  
Active Devices ◽  
Passive Power ◽  
Temperature Ageing

The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

Approaches to High Temperature Contacts to Silicon Carbide

1996 ◽  
Vol 423 ◽  
Author(s):  
J. M. Delucca ◽  
S. E. Mohney
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Transition Metal ◽  
Phase Equilibria ◽  
Periodic Table ◽  
Electrical Characteristics ◽  
Thermally Stable ◽  
Silicon Carbon ◽  
Metallurgical Reactions

AbstractMetallurgical reactions between contacts and SiC can alter the electrical characteristics of the contacts, either beneficially or detrimentally. Simultaneously, consumption of the underlying SiC epilayer takes place. During prolonged operation at elevated temperature, contacts that are not in thermodynamic equilibrium with SiC may continue to react with it. For this reason, interest in thermally stable carbide and silicide contacts to SiC has been growing. To select appropriate carbides or silicides for further study, however, knowledge of the transition metal-silicon-carbon (TM-Si-C) phase equilibria is required. A significant body of literature on the TM-Si-C systems exists and should therefore be examined in the context of electronic applications. In this paper, phase equilibria for representative TM-Si-C systems are presented, trends in these systems with respect to temperature and position of the metal in the periodic table are discussed, and attractive carbide and silicide contacts and processing schemes for thermally stable contacts are highlighted.

Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

2007 ◽  
Vol 556-557 ◽  
pp. 671-674 ◽  
Author(s):  
Sombel Diaham ◽  
Marie Laure Locatelli ◽  
Thierry Lebey
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
High Temperature ◽  
Dielectric Loss ◽  
Loss Factor ◽  
Electrical Behavior ◽  
Power Devices ◽  
Polyimide Films ◽  
Temperature Operating ◽  
Conduction Properties

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000136-000143
Author(s):  
Jim Richmond ◽  
Sei-Hyung Ryu ◽  
Qingchun (Jon) Zhang ◽  
Brett Hull ◽  
Mrinal Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Bipolar Junction Transistors ◽  
Power Devices ◽  
Temperature Range ◽  
Silicon Devices ◽  
Bipolar Switching ◽  
Operational Temperature ◽  
Full Benefit ◽  
High Temperature Operation

Power devices based on Silicon Carbide (SiC) have unmatched potential for extending the operational temperature range of power electronics well past what is possible with silicon devices. SiC JBS diodes are already demonstrating part of that potential but the full benefit will not be realized until a SiC power switch is available. Recently, normally off SiC unipolar and bipolar switching devices have become available with the manufacture of 1200V, 20A MOSFETs and 1200V, 20A bipolar junction transistors (BJT). While both of these device types have undergone considerable study, most of this characterization has been conducted in the normal commercial temperature range which has an upper limit of 150 – 175°C. The SiC BJT is considered to be a superior device for high temperature operation due to its lower on-state voltage and increased reliability due to it not having a gate oxide. As presented, the advantages of the SiC BJT over the SiC MOSFET are not as great as expected and may not warrant the increased complexity of dealing with the current driven base that the BJT requires. Otherwise, both devices offer exceptional performance at high temperature.

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

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