SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

2014 ◽  
Vol 778-780 ◽  
pp. 1122-1125 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Nicolas Thierry-Jebali ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
High Temperature ◽  
Cryogenic Temperature ◽  
Good Choice ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

scholarly journals Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

2015 ◽  
Vol 821-823 ◽  
pp. 814-817 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Dominique Tournier ◽  
Dominique Planson
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

scholarly journals The Influences of Projectile Material and Environmental Temperature on the High Velocity Impact Behavior of Triaxial Braided Composites

2021 ◽  
Vol 11 (8) ◽  
pp. 3466
Author(s):  
Lulu Liu ◽  
Shikai Yin ◽  
Gang Luo ◽  
Zhenhua Zhao ◽  
Wei Chen
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Energy Absorption ◽  
Cryogenic Temperature ◽  
Environmental Temperature ◽  
Impact Resistance ◽  
Matrix Cracking ◽  
Braided Composites ◽  
Damage Pattern ◽  
Braided Composite

Two-dimensional (2D) triaxial braided composites with braiding angle (± 60°/0°) have been used as aero-engine containing casing material. In the current paper, three types of projectile with the same mass and equivalent diameter, including cylinder gelatin projectile, carbon fiber-reinforced plastics (CFRP), and titanium alloy blade-like projectile, were employed to impact on triaxial braided composites panels with thickness of 4.3 mm at room temperature (20 °C) to figure out the influences of projectile materials on the damage pattern and energy absorption behavior. Furthermore, the influences of environmental temperature were also discussed considering the aviation service condition by conducting ballistic impact tests using CFRP projectile at cryogenic temperature (−50 °C) and high temperature (150 °C). The triaxial braided target panel were pre-heated or cooled in a low-temperature chamber before mounted. It is found that soft gelatin project mainly causes global deformation of the target and therefore absorb much more energy. The triaxial braided composite absorb 77.59% more energy when impacted with CFRP projectile than that with titanium alloy projectile, which mainly results in shear fracture. The environmental temperature has influences on the damage pattern and energy absorption of triaxial braided composites. The cryogenic temperature deteriorates the impact resistance of the triaxial braided composite material with matrix cracking damage pattern, while high temperature condition improves its impact resistance with shearing fracture damage pattern.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

scholarly journals Effects of temperature on the behaviour and metabolism of an intertidal foraminifera and consequences for benthic ecosystem functioning

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Noémie Deldicq ◽  
Dewi Langlet ◽  
Camille Delaeter ◽  
Grégory Beaugrand ◽  
Laurent Seuront ◽  
...  
Keyword(s):  
High Temperature ◽  
Ecosystem Functioning ◽  
Photosynthetic Activity ◽  
Species Traits ◽  
Biogeochemical Cycles ◽  
Variable Environment ◽  
Sediment Reworking ◽  
Temperature Regimes ◽  
Slow Moving ◽  
Effects Of Temperature

AbstractHeatwaves have increased in intensity, duration and frequency over the last decades due to climate change. Intertidal species, living in a highly variable environment, are likely to be exposed to such heatwaves since they can be emerged for more than 6 h during a tidal cycle. Little is known, however, on how temperature affects species traits (e.g. locomotion and behaviour) of slow-moving organisms such as benthic foraminifera (single-celled protists), which abound in marine sediments. Here, we examine how temperature influences motion-behaviour and metabolic traits of the dominant temperate foraminifera Haynesina germanica by exposing individuals to usual (6, 12, 18, 24, 30 °C) and extreme (high; i.e. 32, 34, 36 °C) temperature regimes. Our results show that individuals reduced their activity by up to 80% under high temperature regimes whereas they remained active under the temperatures they usually experience in the field. When exposed to a hyper-thermic stress (i.e. 36 °C), all individuals remained burrowed and the photosynthetic activity of their sequestered chloroplasts significantly decreased. Recovery experiments subsequently revealed that individuals initially exposed to a high thermal regime partially recovered when the hyper-thermic stress ceased. H. germanica contribution to surface sediment reworking substantially diminished from 10 mm3 indiv−1 day−1 (usual temperature) to 0 mm3 indiv−1 day−1 when individuals were exposed to high temperature regimes (i.e. above 32 °C). Given their role in sediment reworking and organic matter remineralisation, our results suggest that heatwaves may have profound long-lasting effects on the functioning of intertidal muddy ecosystems and some key biogeochemical cycles.

LTCC Embedding of SiC Power Devices for High Temperature Applications over 400 °C

2020 ◽  
Author(s):  
Benjamin Bayer ◽  
Mario Groccia ◽  
Hoang Linh Bach ◽  
Christoph Friedrich Bayer ◽  
Andreas Schletz ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Temperature Applications

scholarly journals Performance Evaluation of Asphalt Rubber Mixture with Additives

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1200 ◽  
Author(s):  
Cheng ◽  
Liu ◽  
Ren ◽  
Huang
Keyword(s):  
High Temperature ◽  
Fatigue Cracking ◽  
Crumb Rubber ◽  
Good Choice ◽  
Environmental Benefits ◽  
Fatigue Properties ◽  
Control Group ◽  
Rubber Mixture ◽  
Asphalt Rubber ◽  
Temperature Performance

Crumb rubber, as a recycled material used in asphalt mixture, has gained more attention in recent years due to environmental benefits and the advantages of its pavement, such as excellent resistance to cracking, improved durability, less road maintenance, lower road noise, etc. However, the high-temperature performance of mixture with crumb rubber does not perform well. In order to improve the performance, this paper examined the effect of additives on the laboratory performance of asphalt rubber Stone Matrix Asphalt (AR-SMA) with additives. Three groups of AR-SMA: no additives, Styrene–Butadiene–Styrene (SBS) and Granular Polymer Durable additive (GPDa) were included, with no additives as a control group. Each group was investigated at three asphalt rubber content (ARC): 6.4%, 6.9%, 7.4% with regard to high-temperature and fatigue properties. The results show that with increasing ARC, the high-temperature performance of mixture without additive decreases, and the high-temperature performance increases first and then decreases for SBS and GPDa. Moreover, the rutting resistance of AR-SMA with GPDa at 6.9% ARC performs best. Under the condition of mixtures with appropriate ARC, AR-SMA with GPDa has higher fatigue life and sensitivity to fatigue cracking than the control group. Simultaneously, the fatigue performance of AR-SMA with GPDa is not as significant as that without additive with increasing ARC. In a word, GPDa is a good choice to improve the performance of AR-SMA. However, it should be noted that optimal asphalt content of AR-SMA mixtures with GPDa is higher than that of traditional mixtures.

Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing

2006 ◽  
Vol 100 (10) ◽  
pp. 104502 ◽  
Author(s):  
C. P. Chen ◽  
Y. J. Lee ◽  
Y. C. Chang ◽  
Z. K. Yang ◽  
M. Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characteristics ◽  
High Temperature Annealing

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

2013 ◽  
Vol 1538 ◽  
pp. 329-333 ◽  
Author(s):  
Lin Cheng ◽  
Michael J. O’Loughlin ◽  
Alexander V. Suvorov ◽  
Edward R. Van Brunt ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Power Devices ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Oxidation Step ◽  
High Temperature Anneal ◽  
Lifetime Enhancement

ABSTRACTThis paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

Effect of Ag Sintered Bondline Thickness on High Temperature Reliability of SiC Power Devices

2021 ◽  
pp. 1-1
Author(s):  
Zhongyang Deng ◽  
Guisheng Zou ◽  
Qiang Jia ◽  
Bin Feng ◽  
Hongqiang Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Bondline Thickness
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