Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

2012 ◽  
Vol 717-720 ◽  
pp. 61-64 ◽  
Author(s):  
Hironori Daikoku ◽  
M. Kado ◽  
H. Sakamoto ◽  
Hiroshi Suzuki ◽  
T. Bessho ◽  
...  
Keyword(s):  
Growth Rate ◽  
Seed Crystal ◽  
Solution Growth ◽  
Bulk Crystals ◽  
High Quality ◽  
Cross Sectional ◽  
Formation Technique ◽  
Top Seeded Solution Growth ◽  
Microscopy Images

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from −22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents

2014 ◽  
Vol 778-780 ◽  
pp. 79-82 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuhiro Okada ◽  
Koji Moriguchi ◽  
Hiroshi Kaido ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Single Crystal Growth ◽  
Solution Growth ◽  
Process Conditions ◽  
Process Stability ◽  
Growth Interface ◽  
Formation Technique ◽  
Top Seeded Solution Growth

We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.

Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal

2018 ◽  
Vol 924 ◽  
pp. 47-50
Author(s):  
Young Gon Kim ◽  
Su Hun Choi ◽  
Yun Ji Shin ◽  
Seong Min Jeong ◽  
Myung Hyun Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Gradient ◽  
Solution Growth ◽  
Cross Sectional ◽  
Dissolved Carbon ◽  
Simulation Results ◽  
Stable Growth ◽  
Top Seeded Solution Growth ◽  
Numerical Approaches

The modified crucible in the top seeded solution growth (TSSG) method was proposed to get the stable growth condition and the enhanced growth rate. The temperature gradient and the distribution of dissolved carbon in the solvent were obtained by numerical approaches. Compared simulation results and experiment, we investigated the region where is the most of dissolved carbon and it is supplied to the seed through what path. The cross-sectional samples of crucibles and grown SiC crystals were systematically analyzed to investigate the effect of the crucible modification on SiC crystal growth.

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds

2015 ◽  
Vol 821-823 ◽  
pp. 31-34 ◽  
Author(s):  
Tomonori Umezaki ◽  
Daiki Koike ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Flow Direction ◽  
Seed Crystal ◽  
Solution Growth ◽  
Rotational Axis ◽  
Solution Flow ◽  
Step Flow ◽  
Unidirectional Flow ◽  
Novel Method ◽  
Set Up ◽  
Top Seeded Solution Growth

The solution growth of SiC on an off-axis seed is effective on the reduction of threading dislocations. We proposed a novel method to grow a SiC crystal on an off-axis seed by top-seeded solution growth (TSSG). In our previous study, a unidirectional solution flow above a seed crystal is effective to suppress surface roughness in the growth on the off-axis seed. However, it is difficult to apply the unidirectional flow in an axisymmetric TSSG set-up. In this study, the unidirectional flow could be achieved by shifting the rotational axis away from the center of the seed crystal. As a result, the smooth surface was obtained in the wider area where the solution flow direction was opposite to the step-flow direction.

Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent

2015 ◽  
Vol 821-823 ◽  
pp. 14-17 ◽  
Author(s):  
Naoyoshi Komatsu ◽  
Takeshi Mitani ◽  
Tetsuo Takahashi ◽  
Tomohisa Kato ◽  
Kazuhisa Kurashige ◽  
...  
Keyword(s):  
Surface Defects ◽  
Group Iv ◽  
Solution Growth ◽  
High Quality ◽  
Group V ◽  
Bulk Crystal Growth ◽  
Group Iii ◽  
Growth From Solution ◽  
Impurity Elements

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Single Crystals ◽  
Solution Growth ◽  
High Curie Temperature ◽  
High Quality ◽  
Domain Structures ◽  
Growth Method ◽  
Top Seeded Solution Growth

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

2019 ◽  
Vol 963 ◽  
pp. 75-79 ◽  
Author(s):  
Kotaro Kawaguchi ◽  
Kazuaki Seki ◽  
Kazuhiko Kusunoki
Keyword(s):  
Dislocation Density ◽  
Grown Crystal ◽  
Early Stage ◽  
Seed Crystal ◽  
Solution Growth ◽  
Crystal Quality ◽  
Top Seeded Solution Growth ◽  
Koh Etching

We investigated the effect of a melt-back process on the quality of the grown crystal in 4H-SiC solution growth. In our experiments, the crystal was grown by top-seeded solution growth (TSSG) method with and without melt-back, following which the quality of the obtained crystals was compared. When solution growth was carried out without melt-back, solvent inclusions and a different polytype were observed. When molten KOH etching was conducted, the dislocation density in the crystals at the early stage of growth became much higher than that in a seed crystal. Solvent inclusions, a different polytype, and an increase in dislocations were suppressed when solution growth was performed with melt-back. It was confirmed that melt-back is necessary to prevent the deterioration of crystal quality at the early stage of solution growth.

scholarly journals High-quality K0.47Na0.53NbO3 single crystal toward high performance transducer

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7003-7007 ◽  
Author(s):  
Chengpeng Hu ◽  
Hao Tian ◽  
Xiangda Meng ◽  
Guang Shi ◽  
Wenwu Cao ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Growth Method ◽  
Top Seeded Solution Growth

A large-sized, high-quality single crystal of K0.47Na0.53NbO3 was grown by the top-seeded solution growth method.

scholarly journals Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 651
Author(s):  
Minh-Tan Ha ◽  
Le Van Lich ◽  
Yun-Ji Shin ◽  
Si-Young Bae ◽  
Myung-Hyun Lee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Fluid Flow ◽  
Crystal Growth ◽  
Static Magnetic Field ◽  
Crystal Surface ◽  
Solution Growth ◽  
Helmholtz Coils ◽  
External Static Magnetic Field ◽  
Top Seeded Solution Growth

Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal.

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