Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs

This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80 mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to compare the behavior of Wolfspeed’s similarly rated 1.2 kV, 80 mΩ planar MOSFET with the Rohm trench devices. Short circuit withstand time (SCWT) of both designs under nominal operating conditions at room temperature is measured by performing destructive SC tests.

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Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology

Applied Physics Letters ◽

10.1063/1.2200475 ◽

2006 ◽

Vol 88 (18) ◽

pp. 183101 ◽

Cited By ~ 56

Author(s):

Katsuhiko Nishiguchi ◽

Akira Fujiwara ◽

Yukinori Ono ◽

Hiroshi Inokawa ◽

Yasuo Takahashi

Keyword(s):

Electron Transfer ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Electron Transfer ◽

Temperature Operating ◽

Effect Transistor ◽

Processing Circuit

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Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4139 ◽

1997 ◽

Vol 36 (Part 1, No. 6B) ◽

pp. 4139-4142 ◽

Cited By ~ 11

Author(s):

Toshiro Hiramoto ◽

Hiroki Ishikuro ◽

Tomoyuki Fujii ◽

Gen Hashiguchi ◽

Toshiaki Ikoma

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hopping Transport ◽

Effect Transistor

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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)

Journal of Applied Physics ◽

10.1063/1.4793501 ◽

2013 ◽

Vol 113 (17) ◽

pp. 17C501 ◽

Cited By ~ 17

Author(s):

K. Hamaya ◽

Y. Ando ◽

K. Masaki ◽

Y. Maeda ◽

Y. Fujita ◽

...

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spin Accumulation ◽

Transistor Structure ◽

Temperature Detection ◽

Tunnel Barriers ◽

Effect Transistor

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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.795 ◽

2020 ◽

Vol 1004 ◽

pp. 795-800 ◽

Cited By ~ 2

Author(s):

Masakazu Okada ◽

Teruaki Kumazawa ◽

Yusuke Kobayashi ◽

Masakazu Baba ◽

Shinsuke Harada

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Short Circuit ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Pin Diode ◽

Switching Operation ◽

Turn On ◽

Switching Losses ◽

Effect Transistor

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.

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Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

Applied Physics Letters ◽

10.1063/1.116645 ◽

1996 ◽

Vol 68 (25) ◽

pp. 3585-3587 ◽

Cited By ~ 144

Author(s):

H. Ishikuro ◽

T. Fujii ◽

T. Saraya ◽

G. Hashiguchi ◽

T. Hiramoto ◽

...

Keyword(s):

Quantum Wire ◽

Coulomb Blockade ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Insulator Substrate

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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials ◽

10.3390/ma14092316 ◽

2021 ◽

Vol 14 (9) ◽

pp. 2316

Author(s):

Kalparupa Mukherjee ◽

Carlo De Santi ◽

Matteo Borga ◽

Karen Geens ◽

Shuzhen You ◽

...

Keyword(s):

Field Effect Transistor ◽

Dynamic Performance ◽

Power Conversion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Analysis ◽

Power Transistors ◽

Trench Structure ◽

Effect Transistor ◽

Gan On Si

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽

10.3390/ma14133554 ◽

2021 ◽

Vol 14 (13) ◽

pp. 3554

Author(s):

Jaeyeop Na ◽

Jinhee Cheon ◽

Kwangsoo Kim

Keyword(s):

Dynamic Characteristics ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Switching Loss ◽

Switching Speed ◽

Polysilicon Gate ◽

Effect Transistor ◽

Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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