Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

2019 ◽  
Vol 963 ◽  
pp. 479-482
Author(s):  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Salvatore di Franco ◽  
Filippo Giannazzo ◽  
Sylvain Monnoye ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Positive Charge ◽  
Dielectric Breakdown ◽  
Extended Defects ◽  
Ideal Behavior ◽  
Mos Capacitors ◽  
Thermal Oxide ◽  
Nanoscale Characterization ◽  
The Ideal

In this paper, the electrical properties of a thermal oxide (SiO2) grown onto 3C-SiC layers on silicon were investigated, by monitoring the behavior of MOS capacitors. In particular, the growth rate of thermal SiO2 was dependent on the different surface roughness condition. However, independent of the roughness a high density of positive charge was detected. The sample having the smooth surface (subjected to CMP) showed a notably improved dielectric breakdown (BD) field. However, the best BD on macroscopic MOS capacitors was still far from the ideal behavior. Additional insights could be gained employing a nanoscale characterization that revealed the detrimental role of persisting extended defects in the semiconductor. In the semiconductor region far from extended defects the nanoscale BD kinetics was nearly ideal.

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

Electrical Characterization of Copper Penetration Effects in the Gate Oxide of MOS Devices

2001 ◽  
Vol 714 ◽  
Author(s):  
François Mondon ◽  
Jacques Cluzel ◽  
Denis Blachier ◽  
Yves Morand ◽  
Laurent Martel ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Current Increase ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Bias Temperature Stress ◽  
Generation Lifetime

ABSTRACTCopper penetration in thermal oxide was investigated using MOS capacitors by annealing at 450 °C and bias-temperature stress at 250 °C. Copper induces minority carrier generation lifetime decay and oxide leakage current increase. Degradation is enhanced by capacitor biasing, which confirms the role of Cu+ ions. The current-voltage characteristics are consistent with Poole-Frenkel model, showing that electron transport proceeds through traps created in the oxide bulk by copper. When a negative bias is applied, copper traps are removed from oxide near SiO2-Si interface and the leakage current is cancelled but the generation lifetime remains nil, copper contamination of silicon surface being not removed.None of these effects are observed when the copper gate is separated from oxide by a 10 nm TiN layer, proving that this material is an efficient barrier against copper diffusion at 450°C.

scholarly journals Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces

2017 ◽  
Vol 897 ◽  
pp. 107-110 ◽  
Author(s):  
Massimo Camarda ◽  
Judith Woerle ◽  
Véronique Soulière ◽  
Gabriel Ferro ◽  
Hans Sigg ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Interface State ◽  
Mos Capacitors ◽  
Stepped Surfaces ◽  
Thermal Oxide ◽  
Surface Morphologies

In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (<1nm), surface with one with a roughness of ~40nm, characterized by big macrosteps and large terraces. We compared the two surfaces for different thermal oxide thicknesses, ranging from dOx = 3.6 nm to dOx = 32 nm. The extracted interface state traps (Dit) shows a small, but systematic, decrease of ~10-15 % for the samples with macrosteps.

Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 983-986
Author(s):  
Kevin Matocha ◽  
Chris S. Cowen ◽  
Richard Beaupre ◽  
Jesse B. Tucker
Keyword(s):  
Electrical Properties ◽  
Reactive Ion Etching ◽  
Wet Etching ◽  
Breakdown Field ◽  
Band Offset ◽  
Ion Etching ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Conduction Band Offset ◽  
Thermal Oxide

4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer

2011 ◽  
Vol 679-680 ◽  
pp. 378-381 ◽  
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kazushige Koshikawa ◽  
Yasunori Tanaka ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Surface Defects ◽  
Dielectric Breakdown ◽  
Tunnel Current ◽  
Mos Capacitors ◽  
Screw Dislocations ◽  
Peak Intensity ◽  
Thermal Oxide ◽  
Weak Intensity ◽  
Dry Oxidation ◽  
Extrinsic Defects

Photo emission phenomenon and reliability of thermal oxides grown on n-type 4H-SiC (0001) wafer have been investigated using photo emission microscope. Thermal oxides were grown by dry oxidation, and treated in nitrous oxide atmosphere as followed by hydrogen post oxidation annealing. An initial photo emission phenomenon with weak intensity exists just after stress current is applied to the thermal oxide. It is confirmed that most initial emission occurred at the same position as dielectric breakdown of the thermal oxide. Also, the initial emission phenomenon was observed in the MOS capacitors broken by extrinsic defects such as threading screw dislocations and surface defects. In addition, the photo emission due to Fowler-Nordheim tunnel current through the thermal oxide has peak intensity at 2.48 eV.

The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

2002 ◽  
Vol 190 (1-4) ◽  
pp. 35-38 ◽  
Author(s):  
S.S. Sombra ◽  
U.M.S. Costa ◽  
V.N. Freire ◽  
E.A. de Vasconcelos ◽  
E.F. da Silva
Keyword(s):  
Dielectric Breakdown ◽  
Mos Capacitors

Fine structure and properties of defects in naturally occurring silicates and oxides

1990 ◽  
Vol 48 (4) ◽  
pp. 460-461
Author(s):  
David R. Veblen
Keyword(s):  
Chemical Reactions ◽  
High Resolution Electron Microscopy ◽  
Extended Defects ◽  
Single Chain ◽  
Naturally Occurring ◽  
Resolution Electron ◽  
Fine Structures ◽  
Image Simulations ◽  
Similar Crystal Structure

Extended defects and interfaces control many processes in rock-forming minerals, from chemical reactions to rock deformation. In many cases, it is not the average structure of a defect or interface that is most important, but rather the structure of defect terminations or offsets in an interface. One of the major thrusts of high-resolution electron microscopy in the earth sciences has been to identify the role of defect fine structures in reactions and to determine the structures of such features. This paper will review studies using HREM and image simulations to determine the structures of defects in silicate and oxide minerals and present several examples of the role of defects in mineral chemical reactions. In some cases, the geological occurrence can be used to constrain the diffusional properties of defects.The simplest reactions in minerals involve exsolution (precipitation) of one mineral from another with a similar crystal structure, and pyroxenes (single-chain silicates) provide a good example. Although conventional TEM studies have led to a basic understanding of this sort of phase separation in pyroxenes via spinodal decomposition or nucleation and growth, HREM has provided a much more detailed appreciation of the processes involved.

They think they find themselves: radical violence and narcissistic-identity suffering

2019 ◽  
Vol 1 (1) ◽  
pp. 21-31 ◽  
Author(s):  
Louis Brunet
Keyword(s):  
Lone Wolf ◽  
The Creation ◽  
Ideal Ego ◽  
Group Regression ◽  
The Ideal

This article proposes a model of individual violent radicalisation leading to acts of terrorism. After reviewing the role of group regression and the creation of group psychic apparatus, the article will examine how violent radicalisation, by the reversal of the importance of the superego and the ideal ego, serves to compensate the narcissistic identity suffering by “lone wolf” terrorists.

Mereka yang Tidak Dibayar Tinggi: Ibuisme, Taman Kanak-kanak, dan Kampung di Indramayu

2018 ◽  
Vol 3 (2) ◽  
pp. 121
Author(s):  
Mochammad Arief Wicaksono
Keyword(s):  
Kindergarten Teachers ◽  
New Order ◽  
The Family ◽  
Role Of Women ◽  
Community Pressure ◽  
The Village ◽  
Depth Interviews ◽  
The Ideal

The ideology of state-ibuism has always been interwoven with how the New Order regime until nowadays government constructing the “ideal” role of women in the family and community through the PKK (Pembinaan Kesejahteraan Keluarga) organization. However, in Cangkring Village, Indramayu, the ideology of ibuism works not because of the massive government regulating the role of women through the PKK organization, but it is possible because of the structure of the kampung community itself. Through involved observations and in-depth interviews about a kindergarten in the village, a group of housewives who dedicated themselves to teaching in kindergarten were met without getting paid high. From these socio-cultural phenomenons, this paper will describe descriptively and analytically that housewives in the Cangkring village are willing to become kindergarten teachers because of their moral burden as part of the warga kampung and also from community pressure from people who want their children to be able to read and write.

Introduction

2018 ◽  
Author(s):  
Francis L. F Lee ◽  
Joseph M Chan
Keyword(s):  
Hong Kong ◽  
Social Movement ◽  
Media System ◽  
System P ◽  
Connective Action ◽  
Integrated Media ◽  
Media And Communication ◽  
The Ideal

Chapter 1 introduces the background of the Umbrella Movement, a protest movement that took hold in Hong Kong in 2014, and outlines the theoretical principles underlying the analysis of the role of media and communication in the occupation campaign. It explicates how the Umbrella Movement is similar to but also different from the ideal-typical networked social movement and crowd-enabled connective action. It explains why the Umbrella Movement should be seen as a case in which the logic of connective action intervenes into a planned collective action. It also introduces the notion of conditioned contingencies and the conceptualization of an integrated media system.

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