Influence of Cubic Structured-ZnSnO3 Immersion Time to the Performance of Humidity Sensor

ZnSnO3 thin film was deposited at different deposition time (0.5 h, 2 h, 4 h and 6 h) using sol-gel immersion method and the electrical, optical and structural properties of this film was investigated. This research involved the preparation of nanostructured ZnO thin film by using RF magnetron sputtering, preparation of ZnSnO3 sol-gel solution, metal contact deposition and characterization of humidity sensor. The thin film was characterized using current-voltage (I-V) measurement (Keithley 2400) and field emission scanning electron microscopy (FESEM) (JEOL JSM 6701F) for electrical and structural properties respectively. The sensor was characterized using I-V measurement in a humidity chamber (ESPEC SH-261) and the chamber has been set at room temperature with varied relative humidity (% RH), in the range of 40-90% RH. The film prepared with a deposition time of 2 h shows better sensitivity for humidity sensor. The FESEM investigation shows that crystal size increases with the increasing deposition time.

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Sensing Characteristics of PVA-ZnO/SnO2 Nanocube Humidity Sensor Prepared by Sol-Gel Immersion Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.832.466 ◽

2013 ◽

Vol 832 ◽

pp. 466-470

Author(s):

Nor Diyana Md Sin ◽

M.H. Mamat ◽

M. Rusop

Keyword(s):

Room Temperature ◽

Humidity Sensor ◽

Sol Gel ◽

Blue Shift ◽

Immersion Method ◽

Current Voltage ◽

Recovery Times ◽

Humidity Chamber ◽

Response And Recovery ◽

Sensing Characteristics

The effects of polyvinyl alcohol (PVA) loading in ZnO/SnO2 sol-gel immersion method were investigated. The sensor characteristic of in ZnO/SnO2 nanocube was also been tested. The images of sample were carrying out by field emission scanning electron microscopy (FESEM) (JEOL JSM 6700F). The optical properties were characterized using photoluminescent (PL). The thin films were characterized using two point current-voltage (I-V) measurement (Keithley 2400) for electrical properties. The sensor was characterized using I-V measurement in a humidity chamber (ESPEC SH-261) and the chamber has been set at room temperature at 25°C relative humidity (RH %) is varied in the range of 40% to 90 %RH. The FESEM indicate the agglomeration and porous increase as the insertion of PVA into in ZnO/SnO2 nanocube (PVA-ZnO/SnO2 nanocube) compare with the as prepared in ZnO/SnO2 nanocube. PL measurement of PVA-ZnO/SnO2 nanocube describe blue shift behaviour after mixed the PVA. The sensitivity of the sensor of PVA-ZnO/SnO2 nanocube and ZnO/SnO2 nanocube were ratio of current 3.24 times and 12.7 times. While the response and recovery times of PVA-ZnO/SnO2 nanocube higher response and recovery times as compare with ZnO/SnO2 nanocube.

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Optical and Structural Properties of ZnO Nanostructures Deposited on PSi Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.359 ◽

2013 ◽

Vol 667 ◽

pp. 359-362 ◽

Cited By ~ 1

Author(s):

S. Azizdzul ◽

S. Amizam ◽

Saifollah Abdullah ◽

Mohamad Rusop

Keyword(s):

Zinc Oxide ◽

Optical Properties ◽

Porous Silicon ◽

Structural Properties ◽

Deposition Temperature ◽

Deposition Time ◽

Electrochemical Etching ◽

Sol Gel ◽

Zno Nanostructures ◽

Immersion Method

The optical and structural properties of Zinc Oxide (ZnO) nanostructures is prepared by sol-gel immersion method at different temperature on Porous Silicon (PSi) Substrates. PSi is produced from the Si by using electrochemical etching process. The ZnO solution is prepared by using the sol-gel immersion method. Parameters such as different deposition time were studied. The optical properties of ZnO Nanostructures will be characterized by using PL and SEM. The structural properties of ZnO Nanostructures will be characterized by using XRD. The result of investigation show that the growth of ZnO nanostructures improving as the deposition temperature increase.

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Effect of TiO2 Seed Layer Thickness to the Growth of TiO2 Nanostructures by Immersion Method for Memristive Device Application

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.393.63 ◽

2013 ◽

Vol 393 ◽

pp. 63-67 ◽

Cited By ~ 3

Author(s):

Nur Syahirah Kamarozaman ◽

Mohd Nor Asiah ◽

Z. Aznilinda ◽

Raudah Abu Bakar ◽

Sukreen Hana Herman ◽

...

Keyword(s):

Thin Film ◽

Layer Thickness ◽

Seed Layer ◽

Rf Magnetron Sputtering ◽

Voltage Measurement ◽

Immersion Method ◽

Memristive Behavior ◽

Current Voltage ◽

Naoh Solution ◽

Seed Layer Thickness

TiO2 nanostructures were successfully grown on TiO2 thin film by solution-based method at low temperature. TiO2 thin film as a seed layer for the nanostructures growth was deposited on ITO substrate by RF magnetron sputtering method at 40 and 60 nm thicknesses. Then the TiO2 nanostructures were synthesized on the samples by keeping them floating with TiO2 layer facing down the vessel in 10M NaOH solution at 80°C for 45 min. Effect of seed layer thickness to the growth of TiO2 nanostructure and its memristive behaviour were investigated. Surface morphology and current-voltage measurement for its memristive behaviour were measured by FESEM image and Keithley 4200 semiconductor characterization system. It was found that 60 nm-TiO2 thin film result in the formation of dandelion-like morphology of TiO2 nanowires and gives better memristive behavior with larger switching loops when positive voltage was applied to the sample.

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Memristive Behavior of TiO2 Nanostructures Grown at Different Substrate Positioning by Immersion Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.795.256 ◽

2013 ◽

Vol 795 ◽

pp. 256-259 ◽

Cited By ~ 3

Author(s):

Nur Syahirah Kamarozaman ◽

Mohd Nor Asiah ◽

Z. Aznilinda ◽

R.A. Bakar ◽

W.F.H. Abdullah ◽

...

Keyword(s):

Thin Film ◽

Rf Magnetron Sputtering ◽

Growth Morphology ◽

Immersion Method ◽

Coated Substrate ◽

Memristive Behavior ◽

Current Voltage ◽

Ito Glass ◽

Naoh Solution ◽

Wet Chemical

In this paper, the physical characteristics and memristive behavior of TiO2 nanostructures grown at different substrate positioning by wet chemical solution were investigated. TiO2 thin film as a seed layer for TiO2 nanostructures growth was first deposited on ITO-coated substrate by RF magnetron sputtering method. TiO2 nanostructures were then grown by immersing the TiO2 thin film/ITO/glass sample in 10M NaOH solution at 80 °C while studying the effect of the substrate position to the nanostructure growth and thus its memristive behavior. Characterization on the growth morphology of TiO2 nanostructures was observed using scanning electron microscopy (FESEM). The current-voltage (I-V) measurement of the device was investigated for its memristive behavior. Different growth morphology of TiO2 nanostructures was observed at different substrate positioning. It was found that sample immersed with TiO2 layer facing down the vessel result in the formation of TiO2 nanowires and exhibit better memristive behavior.

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The Effect of Deposition Time on the Structural Properties of ZnO Nanorods Prepared by Sol-Gel Immersion Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.407 ◽

2013 ◽

Vol 667 ◽

pp. 407-410

Author(s):

N.A. Amir ◽

Zuraida Khusaimi ◽

Saifollah Abdullah ◽

Mohamad Rusop

Keyword(s):

Growth Rate ◽

Structural Properties ◽

Deposition Time ◽

Sol Gel ◽

Zno Nanorods ◽

Growth Time ◽

Si Substrate ◽

Immersion Method ◽

Bare Substrate ◽

Scanning Electron

ZnO nanorods were successfully grown on Au coated Si substrate and Si bare substrate. The growth was using sol-gel immersion method at different deposition time which is 2, 4, 6, 8, 10 and 12 hours. In the presence of Au, growth rate of nanorods is much faster as it performs as a catalyst by decreasing the growth time of ZnO nanorods to half compared to growth on Si substrate without Au coated. Using Scanning Electron Microscope (SEM), changes in growth of nanorods at different deposition time was captured and the structural properties are discussed.

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Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

Journal of Electronic Materials ◽

10.1007/s11664-019-07880-6 ◽

2019 ◽

Vol 49 (3) ◽

pp. 1993-2002

Author(s):

Manuel A. Hernández-Ochoa ◽

Humberto Arizpe-Chávez ◽

Rafael Ramírez-Bon ◽

Alain Pérez-Rodríguez ◽

Manuel Cortez-Valadez ◽

...

Keyword(s):

Schottky Diodes ◽

Sol Gel ◽

Multilayer Films ◽

Current Voltage

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Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.317-318.807 ◽

2006 ◽

Vol 317-318 ◽

pp. 807-810 ◽

Cited By ~ 3

Author(s):

Chang Yeoul Kim ◽

Jin Wook Choi ◽

Tae Yeoung Lim ◽

Duck Kyun Choi

Keyword(s):

Thin Film ◽

Sol Gel ◽

Dip Coating ◽

Xrd Pattern ◽

Starting Solution ◽

Oxide Crystal ◽

Heat Treated ◽

Coating Method ◽

Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

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The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.891 ◽

2011 ◽

Vol 239-242 ◽

pp. 891-894 ◽

Cited By ~ 3

Author(s):

Tsung Fu Chien ◽

Jen Hwan Tsai ◽

Kai Huang Chen ◽

Chien Min Cheng ◽

Chia Lin Wu

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Morphological Characterization ◽

Experimental Result ◽

X Ray Diffraction ◽

Solution Deposition ◽

Capacitance Voltage ◽

Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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