Optical and Structural Properties of ZnO Nanostructures Deposited on PSi Substrates

2013 ◽  
Vol 667 ◽  
pp. 359-362 ◽  
Author(s):  
S. Azizdzul ◽  
S. Amizam ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Porous Silicon ◽  
Structural Properties ◽  
Deposition Temperature ◽  
Deposition Time ◽  
Electrochemical Etching ◽  
Sol Gel ◽  
Zno Nanostructures ◽  
Immersion Method

The optical and structural properties of Zinc Oxide (ZnO) nanostructures is prepared by sol-gel immersion method at different temperature on Porous Silicon (PSi) Substrates. PSi is produced from the Si by using electrochemical etching process. The ZnO solution is prepared by using the sol-gel immersion method. Parameters such as different deposition time were studied. The optical properties of ZnO Nanostructures will be characterized by using PL and SEM. The structural properties of ZnO Nanostructures will be characterized by using XRD. The result of investigation show that the growth of ZnO nanostructures improving as the deposition temperature increase.

The Effect of Deposition Temperature on the Growth of ZnO Nanorods on Porous Silicon using Sol-gel Immersion Method

2009 ◽  
Author(s):  
S. Amizam ◽  
M. H. Mamat ◽  
Z. Khusaimi ◽  
H. A. Rafaie ◽  
M. Z. Sahdan ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Deposition Temperature ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Immersion Method

Structural Properties of Stannic Oxide Coated Aluminium-Doped Zinc Oxide Nanorods

2015 ◽  
Vol 1109 ◽  
pp. 476-480
Author(s):  
Ahmad Syakirin Ismail ◽  
Mohd Firdaus Malek ◽  
Muhammad Amir Ridhwan Abdullah ◽  
Mohamad Hafiz Mamat ◽  
M. Rusop
Keyword(s):  
Zinc Oxide ◽  
Structural Properties ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Oxide Coating ◽  
Zinc Oxide Nanorods ◽  
Stannic Oxide ◽  
Immersion Method ◽  
Force Microscopy ◽  
Atomic Force

Aluminium (Al) - doped zinc oxide (ZnO) nanorods was deposited using sol-gel immersion method. To study the effect of stannic oxide coating (SnO2) on the structural properties of the ZnO nanorods, SnO2with different layers were deposited on the top of ZnO nanorods, from 1 to 5 layers. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM), atomic force microscopy and x-ray diffraction (XRD). The analyses showed that by increasing the deposited layer, the surface roughness of the samples reduced and also reduced the porosity of the surface.

scholarly journals Influence of Cubic Structured-ZnSnO3 Immersion Time to the Performance of Humidity Sensor

Nano Hybrids ◽  
2012 ◽  
Vol 2 ◽  
pp. 1-11 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
Noor Khadijah ◽  
Mohamad Hafiz Mamat ◽  
Musa Mohamed Zaihidi ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Humidity Sensor ◽  
Deposition Time ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Immersion Method ◽  
Current Voltage ◽  
Humidity Chamber

ZnSnO3 thin film was deposited at different deposition time (0.5 h, 2 h, 4 h and 6 h) using sol-gel immersion method and the electrical, optical and structural properties of this film was investigated. This research involved the preparation of nanostructured ZnO thin film by using RF magnetron sputtering, preparation of ZnSnO3 sol-gel solution, metal contact deposition and characterization of humidity sensor. The thin film was characterized using current-voltage (I-V) measurement (Keithley 2400) and field emission scanning electron microscopy (FESEM) (JEOL JSM 6701F) for electrical and structural properties respectively. The sensor was characterized using I-V measurement in a humidity chamber (ESPEC SH-261) and the chamber has been set at room temperature with varied relative humidity (% RH), in the range of 40-90% RH. The film prepared with a deposition time of 2 h shows better sensitivity for humidity sensor. The FESEM investigation shows that crystal size increases with the increasing deposition time.

Effect of Urea as a Stabiliser in the Thermal Immersion Method to Synthesise Zinc Oxide Nanostructures on Porous Silicon Nanostructures

2013 ◽  
Vol 832 ◽  
pp. 644-648 ◽  
Author(s):  
F.S. Husairi ◽  
Kevin Alvin Eswar ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Zinc Nitrate ◽  
Synthesis Process ◽  
Silicon Nanostructures ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Immersion Method ◽  
P Type

In this work, ZnO nanostructures were prepared using the catalytic immersion method (90 °C) with zinc nitrate hexahydrate (Zn (NO3)26H2O) as a precursor, urea (CH4N2O) as a stabiliser and porous silicon nanostructures (PSi) as a substrate. PSi prepared on p-type Si by using electrochemical etching method. Different molarity concentration ratios of Zn (NO3)26H2O to CH4N2O (2:1, 1:2, 1:4 and 1:6) were used in this work. The effects of the urea concentration during the synthesis process were discussed. The ZnO nanostructures were characterised using field emission scanning electron microscope (FESEM), photoluminescence (PL) and I-V probe. Porous nanoflakes were successfully synthesised on a p-type PSi substrate that was prepared by electrochemical etching. High-intensity photoluminescence (PL) at the optimum concentration indicated that urea is a good stabiliser to produce ZnO nanostructures with good crystallinity. The high resistance of ZnO/PSi show that electrical properties of PSi dominant compare to ZnO nanostructures.

The Effect of Deposition Time on the Structural Properties of ZnO Nanorods Prepared by Sol-Gel Immersion Method

2013 ◽  
Vol 667 ◽  
pp. 407-410
Author(s):  
N.A. Amir ◽  
Zuraida Khusaimi ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Growth Rate ◽  
Structural Properties ◽  
Deposition Time ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Growth Time ◽  
Si Substrate ◽  
Immersion Method ◽  
Bare Substrate ◽  
Scanning Electron

ZnO nanorods were successfully grown on Au coated Si substrate and Si bare substrate. The growth was using sol-gel immersion method at different deposition time which is 2, 4, 6, 8, 10 and 12 hours. In the presence of Au, growth rate of nanorods is much faster as it performs as a catalyst by decreasing the growth time of ZnO nanorods to half compared to growth on Si substrate without Au coated. Using Scanning Electron Microscope (SEM), changes in growth of nanorods at different deposition time was captured and the structural properties are discussed.

Growth of ZnO Nanosturctures on Porous Silicon in Different Concentration of Zn2+ Ion

2013 ◽  
Vol 832 ◽  
pp. 691-694 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
F.S. Husairi ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Electrochemical Etching ◽  
Sol Gel ◽  
Zinc Nitrate ◽  
Ion Concentration ◽  
Wafer Surface ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
Immersion Method ◽  
Electron Microscopic ◽  
P Type

In this work, zinc nitrate was used as starting materials while hexamethylenetetramine as stabilizier and deionized water as a solvent. Electrochemical etching method was employed to modify p-type silicon wafer surface in substrate preparation. ZnO nanostructures were simply deposited on substrate by sol-gel immersion method. Different molarities of precursor were prepared to study the effect of Zn2+ ion concentration in growth of ZnO nanostructures. Field Emission Scanning Electron Microscopic (FESEM) revealed that concentration of Zn2+ ion precursor influences the growth of ZnO nanostructures. ZnO nanoflower was formed in low molarity and becomes nanospherical composed by nanorods in high molarity. X-Ray diffraction (XRD) spectroscopy was employed to analyse the structural properties. The result was confirming the formation of hexagonal wurtzite of ZnO nanostructures. Besides, the growth of ZnO nanostructures was aligned to (002) towards higher molarity.

Effect of Dopant Concentration on Electrical and Optical Properties of Sn-Doped ZnO Thin Films Deposited by Sol-Gel Immersion Method

2015 ◽  
Vol 1109 ◽  
pp. 549-553
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
Mohamad Hafiz Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Immersion Method ◽  
Electrical And Optical Properties ◽  
Current Voltage ◽  
Doped Zno

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 0.5 at.%, 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. The synthesized samples were characterized by current-voltage (I-V) measurement and UV-VISS spectrometer.

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

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