Improvement of Luminescent Properties of Phosphor Powders Coated with Nanoscaled SiO2 by Atomic Layer Deposition

An investigation is reported by coating BaMgAl10O17:Eu2+ phosphor by silicon oxide using catalyzed atomic layer deposition. Nanoscaled SiO2 films were prepared at room temperature using tetraethoxysilane (TEOS), H2O and NH3 as precursors, reactant gas and catalyst, respectively. AES analysis showed the surface composition of coated phosphor was silicon oxide. In TEM and FE-SEM analysis, the growth rate was about 0.7 Å/cycle and the surface morphology became smoother and clearer than that of uncoated phosphor. The photoluminescence intensity (PL) increased up to 11.04% as ALD cycle increased up to 200 ALD cycle. This means that the reactive surface of uncoated phosphors is uniformly grown with stable silicon oxide to reduce the dead surface layer without change of bulk properties. Moreover, it is found that nanoscaled SiO2 films are quite effective for the improvement of the aging characteristics of photoluminescence.

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01232k ◽

2021 ◽

Author(s):

Yuanyuan Cao ◽

Sha Zhu ◽

Julien Bachmann

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Two Dimensional ◽

Molecular Precursors ◽

Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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Luminescent Properties of Multilayered Eu2O3and TiO2Grown by Atomic Layer Deposition**

Chemical Vapor Deposition ◽

10.1002/cvde.201407113 ◽

2014 ◽

Vol 20 (7-8-9) ◽

pp. 274-281 ◽

Cited By ~ 8

Author(s):

Per-Anders Hansen ◽

Helmer Fjellvåg ◽

Terje G. Finstad ◽

Ola Nilsen

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Luminescent Properties ◽

Layer Deposition

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Oxidizing versus Reducing Co-Reactants in Manganese Atomic Layer Deposition (ALD) on Silicon Oxide Surfaces

ECS Journal of Solid State Science and Technology ◽

10.1149/2.017405jss ◽

2014 ◽

Vol 3 (5) ◽

pp. Q89-Q94 ◽

Cited By ~ 7

Author(s):

Xiangdong Qin ◽

Francisco Zaera

Keyword(s):

Atomic Layer Deposition ◽

Silicon Oxide ◽

Atomic Layer ◽

Oxide Surfaces ◽

Layer Deposition

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ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2866598 ◽

2018 ◽

Vol 65 (10) ◽

pp. 4513-4519

Author(s):

Mei Shen ◽

Triratna P. Muneshwar ◽

Kenneth C. Cadien ◽

Ying Yin Tsui ◽

Douglas W. Barlage

Keyword(s):

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Layer Deposition

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Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

Materials ◽

10.3390/ma14205966 ◽

2021 ◽

Vol 14 (20) ◽

pp. 5966

Author(s):

José Rosa ◽

Jouko Lahtinen ◽

Jaakko Julin ◽

Zhipei Sun ◽

Harri Lipsanen

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Luminescent Properties ◽

Blue Shift ◽

Inorganic Materials ◽

Emission Wavelength ◽

Layer Deposition ◽

Fine Control ◽

Novel Material ◽

Luminescent Centers

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2− ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

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Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽

10.21820/23987073.2020.5.16 ◽

2020 ◽

Vol 2020 (5) ◽

pp. 16-18

Author(s):

Fumihiko Hirose

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Graduate School ◽

Room Temperature ◽

Atomic Layer ◽

Science And Engineering ◽

Layer Deposition ◽

Potential Applications ◽

Properties Of Materials ◽

Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

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